C11D7/5022

CLEANING FORMULATION FOR REMOVING RESIDUES ON SURFACES

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

COMPOSITIONS FOR REMOVING UNWANTED MATERIAL FROM AN OBJECT AND METHODS OF USING SUCH COMPOSITIONS
20230123705 · 2023-04-20 ·

Compositions or finishing solutions configured to remove unwanted material, such as uncured material or resin, from additively manufactured objects are disclosed herein, in one example, the finishing solution includes a first glycol ether and a second glycol ether and/or a high flash point hydrocarbon, wherein the finishing solution has a flash point of at least 93.3° C. In alternative examples, the finishing solution may also include a third glycol ether, a high flash point alcohol, and/or an acetate of a glycol ether.

SEMICONDUCTOR TREATMENT LIQUID AND METHOD FOR MANUFACTURING SAME

Provided are: a semiconductor treatment liquid comprising high-purity isopropyl alcohol, wherein the concentration of the oxolane compound expressed in formula (1) below when held for 60 days in a nitrogen atmosphere at 50° C. in a SUS304 container is 25 ppb or less on a mass basis in relation to the isopropyl alcohol; and a method for manufacturing said semiconductor treatment liquid. In the formula, R.sup.1 and R.sup.2 each independently represent a hydrogen atom or a C1-3 alkyl group, and the total number of carbon atoms in R.sup.1 and R.sup.2 is 3 or less. R.sup.3 represents a hydrogen atom or an isopropyl group.

Fluorinated alkoxyvinyl ethers and methods for preparing fluorinated alkoxyvinyl ethers

An alkoxyvinyl ether is disclosed having the chemical structure R.sub.fC(OR)═CHR.sub.f′, wherein R.sub.f is an at least partially fluorinated functional group having at least one carbon atom, R.sub.f′ is an at least partially fluorinated functional group having at least two carbon atoms, and R is a functional group. A method for preparing an alkoxyvinyl ether is disclosed, comprising R.sub.fCFHCFHR.sub.f′+KOH/ROH.fwdarw.R.sub.fC(OR)═CHR.sub.f′, wherein R.sub.f is a perfluoro functional group, R.sub.f′ is a perfluoro functional group, and R is an alkyl functional group. Another method for preparing an alkoxyvinyl ether is disclosed, comprising R.sub.fCF═CHR.sub.f′+KOH/ROH.fwdarw.R.sub.fC(OR)═CHR.sub.f′, wherein R.sub.f is a perfluoro functional group, R.sub.f′ is a perfluoro functional group, and R is an alkyl functional group.

Photoresist Remover

Cleaning compositions and the method of using the same are disclosed, where the compositions include one or more alkanolamines, one or more ether alcohol solvents or aromatic containing alcohol, one or more corrosion inhibitors, and optionally one or more secondary solvents.

Cleaning Composition for Post Chemical Mechanical Planarization And Method Of Using The Same

The present invention provides a cleaning composition for post CMP cleaning and method for post CMP cleaning microelectronic device. The cleaning composition according to the invention includes at least one chelating agent, at least one organic solvent, at least one polycarboxylic acid, at least one basic pH adjustor, at least one metal anticorrosive agent, and water. The TMAH-free cleaning composition according to the invention provides improved cleaning efficiency and electrochemical compatibility with both cobalt and copper materials.

Cleaning formulation for removing residues on surfaces

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

SEMICONDUCTOR SUBSTRATE CLEANING METHOD, PROCESSED SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND COMPOSITION FOR PEELING

The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (wherein each of L.sup.1 and L.sup.2 represents a C2 to C4 alkyl group, and L.sup.3 represents O or S) in an amount of 80 mass % or more.


L.sup.1-L.sup.3-L.sup.2(L)

METHOD FOR CLEANING SUBSTRATE AND SYSTEM FOR CLEANING SUBSTRATE
20230147501 · 2023-05-11 · ·

A method for cleaning a substrate includes the following: exposing the substrate to a cleaning agent to remove impurities on a surface of the substrate; exposing the substrate to a dewetting chemical agent in a liquid phase to remove the cleaning agent on the surface of the substrate; solidifying the dewetting chemical agent in the liquid phase remaining on the surface of the substrate to obtain the dewetting chemical agent in a solid phase; and sublimating and removing the dewetting chemical agent in the solid phase.

SUSPENSION CLEANING

A method of cleaning a contaminated surface, such as cleaning the elongate interior lumen of an endoscope contaminated with flesh, bone, blood, mucous, faeces or biofilm, said method comprising the steps of: providing a suspension of solid particles in a liquid to said contaminated surface, and flowing said suspension along said surface thereby to remove contaminant from the surface. The suspension is preferably a paste, where the solid material may be e.g. crystals of a salt, silicon oxide or organic material. The paste preferably has a solid fraction between 5 and 55%. A rheology modifier may be present.