Disclosed are the use of fluorine substituted olefins, including tetra- and penta-fluoropropenes, in a variety of applications, including in methods of depositing catalyst on a solid support, methods of sterilizing articles, cleaning methods and compositions, methods of applying medicaments, fire extinguishing/suppression compositions and methods, flavor formulations, fragrance formulations and inflating agents.

The present invention provides a means for sufficiently removing organic residues remaining on the surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished. The present invention relates to a surface treatment composition including a polymer compound having a sulfonic acid (salt) group and water, wherein the surface treatment composition has a pH value of less than 7 and the surface treatment composition is used for decreasing an organic residue on a surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished.

Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The substrate cleaning composite includes an etching compound that provides a component for treating a substrate, and a solvent that dissolves the etching compound, wherein the substrate cleaning composite is an anhydrous composite that does not include water.

Several of the films that comprise various energy producing or control devices, for example, electrochromic devices, lithium batteries, and photovoltaic cells, are sensitive to moisture in some way. They may be especially vulnerable to moisture at particular stages during their fabrication. It may also be highly desirable during fabrication to be able to wash particulates from the surface. The particulates may be generated some aspect of the fabrication process, or they may arise from the environment in which the fabrication takes place. This invention shows ways to remove said particles from the surface without incurring the damage associated with typical washing processes, resulting in higher manufacturing yields and better device performance.

The invention relates to a method for removing a metal deposit (2) arranged on a surface (5) in a chamber (1), said method including repeatedly performing a sequence including: a) a first phase of injecting chemical species suitable for oxidizing said metal deposit (2); and b) a second phase of injecting chemical species suitable for volatilizing the oxidized metal deposit, said second phase b) being performed after the first phase a).

A method for effectively removing minute impurities of 1 m or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface includes scrubbing a surface of an aluminum nitride single-crystal substrate using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass % concentration of potassium hydroxide or sodium hydroxide, the alkali aqueous solution being absorbed in the polymer compound material.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one alkylsulfonic acid or a salt thereof, the alkylsulfonic acid containing an alkyl group substituted by OH or NH.sub.2; 3) at least one aminoalcohol; 4) at least one corrosion inhibitor; 5) at least one water soluble organic solvent; 6) water; and 7) optionally, at least one pH adjusting agent.

A container for containing a raw material of a chemical liquid and a method of preparing a container are provided. The container at least includes an inner wall and solvent-treated surface of the inner wall. The method of preparing a container includes treating a surface of the inner wall with water and treating the surface the inner wall with an organic solvent.

The invention relates to the use of a non-aqueous composition comprising an organic solvent and at least one particular siloxane-type additive for treating substrates comprising patterns having line-space dimensions of 50 nm or below and aspect ratios of 4 or more as well as a method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm, aspect ratios of greater or equal 4, or a combination thereof, (2) contacting the substrate at least once with a non-aqueous composition, and (3) removing the non-aqueous composition from the contact with the substrate, wherein the non-aqueous composition comprising an organic solvent and at least one of such siloxane-type additives.

The present invention generally relates to a removal composition and process, particularly useful for cleaning ceria particles and CMP contaminants from microelectronic devices having said particles and CMP contaminants thereon, in particular microelectronic devices having PETEOS, Silicon Nitride, and Poly-Si substrates. In one aspect, the invention provides treatment of the microelectronic substrate having ceria particles thereon utilizing complexing agents free of Sulfur and Phosphorous atoms.