A current collector in which, even in the case of using a copper substrate, an electroconductive layer comprising a thermoplastic resin and an electroconductive material and covering the copper substrate provides the same positive temperature coefficient resistance function as the case of using an aluminum substrate. The current collector may comprise: a copper substrate comprising a copper oxide layer that an average content of an oxygen element present within a thickness of 1.0 μm or less from a surface of the copper substrate, is 10.5 at % or more, and a positive temperature coefficient resistance layer comprising a thermoplastic resin and an electroconductive material and covering the copper oxide layer of the copper substrate.

A current collector in which, even in the case of using a copper substrate, an electroconductive layer comprising a thermoplastic resin and an electroconductive material and covering the copper substrate provides the same positive temperature coefficient resistance function as the case of using an aluminum substrate. The current collector may comprise: a copper substrate comprising a copper oxide layer that an average content of an oxygen element present within a thickness of 1.0 μm or less from a surface of the copper substrate, is 10.5 at % or more, and a positive temperature coefficient resistance layer comprising a thermoplastic resin and an electroconductive material and covering the copper oxide layer of the copper substrate.

A current collector in which, even in the case of using a copper substrate, an electroconductive layer comprising a thermoplastic resin and an electroconductive material and covering the copper substrate provides the same positive temperature coefficient resistance function as the case of using an aluminum substrate. The current collector may comprise: a copper substrate comprising a copper oxide layer that an average content of an oxygen element present within a thickness of 1.0 μm or less from a surface of the copper substrate, is 10.5 at % or more, and a positive temperature coefficient resistance layer comprising a thermoplastic resin and an electroconductive material and covering the copper oxide layer of the copper substrate.

The invention relates to a method for the production and removal of a temporary protective layer for a cathodic coating, particularly for the production of a hardened steel component with an easily paintable surface, wherein a steel sheet made of a hardenable steel alloy is subjected to a preoxidation, wherein said preoxidation forms a FeO layer with a thickness of 100 nm to 1,000 nm and subsequently a melt dip coating is conducted, wherein, during the melt dip coating, a zinc layer is applied having a thickness of 5 to 20 μm, preferably 7 to 14 μm, on each side, wherein the melt dip process and the aluminum content of the zinc bath is adjusted such that, during the melt dip coating, an aluminum content for the barrier layer results of 0.15 g/m.sup.2 to 0.8 g/m.sup.2 and the steel sheet or sheet components made therefrom is subsequently heated to a temperature above the austenitizing temperature and is then cooled at a speed greater than the critical hardening speed in order to cause hardening, wherein oxygen-affine elements are contained in the zinc bath for the melt dip coating in a concentration of 0.10 wt.-% to 15 wt.-% that, during the austenitizing on the surface of the cathodic protective layer, form a thin skin comprised of the oxide of the oxygen-affine elements and said oxide layer is blasted after hardening by irradiation of the sheet component with dry ice particles.

Described herein is a technique capable of detecting a substrate state without contacting the substrate. According to one aspect of the technique, there is provided (a) loading a substrate retainer, where a plurality of substrates is placed, into a reaction tube; (b) processing the plurality of the substrates by supplying a gas into the reaction tube; (c) unloading the substrate retainer out of the reaction tube after the plurality of the substrates is processed; and (d) detecting the plurality of the substrates placed on the substrate retainer after the substrate retainer is rotated by a first angle with respect to a transferable position, wherein the plurality of the substrates is transferable to/from the substrate retainer in the transferable position.

Described herein is a technique capable of detecting a substrate state without contacting the substrate. According to one aspect of the technique, there is provided (a) loading a substrate retainer, where a plurality of substrates is placed, into a reaction tube; (b) processing the plurality of the substrates by supplying a gas into the reaction tube; (c) unloading the substrate retainer out of the reaction tube after the plurality of the substrates is processed; and (d) detecting the plurality of the substrates placed on the substrate retainer after the substrate retainer is rotated by a first angle with respect to a transferable position, wherein the plurality of the substrates is transferable to/from the substrate retainer in the transferable position.

A method for finely powdering tungsten powder, which includes: a process for classifying a material tungsten powder into a fine powder having a relatively small average particle diameter and a coarse powder having a relatively large average particle diameter; an oxidation process for forming an oxide film on the particle surface of the coarse powder; and an alkali treatment process for removing the oxide film formed in the oxidation process and a natural oxide film formed on the fine powder with an alkali aqueous solution. Also disclosed is a method for producing ultrafine tungsten powder, which includes obtaining tungsten powder having an average particle diameter of 0.04 to 0.4 μm and a BET specific surface area of 5 to 15 m.sup.2/g by the above method for finely powdering.

The present invention relates to a chemical vapor deposition coating, a chemical vapor deposition article, and a chemical vapor deposition method. The coating, article, and method involve thermal decomposition of dimethylsilane to achieve desired surface properties.

The present invention relates to a chemical vapor deposition coating, a chemical vapor deposition article, and a chemical vapor deposition method. The coating, article, and method involve thermal decomposition of dimethylsilane to achieve desired surface properties.

The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.