A method for fabricating a high-temperature resistant device includes providing a tantalum substrate as a device body, performing an oxidation treatment on the tantalum substrate in an oxygen-containing environment to form a tantalum oxide layer on a surface of the tantalum substrate, and then embedding the tantalum substrate after the oxidation treatment in a carbonaceous matter for performing a carbonization reaction in an inert gas, so that the tantalum oxide layer is transformed into a tantalum carbide layer. A temperature of the oxidation treatment is between 100 C. and 1100 C.

A method for fabricating a high-temperature resistant device includes providing a tantalum substrate as a device body, performing an oxidation treatment on the tantalum substrate in an oxygen-containing environment to form a tantalum oxide layer on a surface of the tantalum substrate, and then embedding the tantalum substrate after the oxidation treatment in a carbonaceous matter for performing a carbonization reaction in an inert gas, so that the tantalum oxide layer is transformed into a tantalum carbide layer. A temperature of the oxidation treatment is between 100 C. and 1100 C.