To provide a decorative member having a cherry blossom pink color. A cherry blossom pink decorative member of the present invention includes a base and a decorative coating formed on the base, wherein the decorative coating is formed by layering an undercoat layer and a finishing layer from the base side, the undercoat layer is a carbonitride layer composed of a carbonitride of a metal containing Ti and at least one selected from Nb and Ta, and the finishing layer is a Au alloy layer composed of an alloy containing Au, a metal having a silver color, and Cu.

Disclosed is an optical filter that has a high refractive index and low extinction coefficient characteristics in a narrowband of approximately 800 nm-1100 nm, and a sensor system comprising the same.

A method for ion-assisted deposition of optical coatings. The method may include performing one or more pre-deposition processes. The method may include performing evaporation using an evaporation assembly of an ion-assisted deposition system during ion-assisted deposition using a low energy ion beam source of the ion-assisted deposition system. The method may further include performing sputtering using a sputtering assembly of an ion-assisted deposition system. The evaporation assembly may include an evaporating target and an evaporator configured to directly evaporate target material from the evaporating target onto a surface of the one or more samples. The sputtering assembly may include a sputtering target and a sputtering high energy ion source configured to sputter target material from the sputtering target onto a surface of the one or more samples. The method may include performing one or more post-deposition treatment processes.

A magnetically enhanced plasma apparatus includes a hollow cathode target assembly; an anode positioned on top of the hollow cathode target assembly, thereby forming a gap between the anode and the hollow cathode target assembly; a cathode magnet assembly; a row of magnets that generate a magnetic field in the gap and a magnetic field on a surface of the hollow cathode target assembly with the cathode magnet assembly such that magnetic field lines are substantially perpendicular to a surface of the hollow cathode target assembly; an electrode positioned adjacent to the row of magnets behind the gap; a first radio frequency (RF) power supply coupled to the electrode, wherein the electrode is coupled to ground through an inductor; and a second radio frequency (RF) power supply coupled to the hollow cathode target assembly. The second RF power supply ignites and sustains plasma in the hollow cathode target assembly. A frequency and power of the second RF power supply are selected to increase at least one of a degree of dissociation of feed gas molecules and degree of ionization of feed gas atoms. A frequency and power of the first RF power supply are selected to increase a degree of dissociation of feed gas molecules to form a layer from sputtering hollow cathode target material onto a substrate.

A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.

Coated tool for hot stamping of coated or uncoated sheet metals, in particular for hot stamping of AlSi- or Zn-coated sheet metals.sub.[KM2], comprising a coated substrate surface to be in contact with the coated or uncoated metal sheet, wherein the coating in the coated substrate surface is a multi-layer coating comprising one or more inferior layers and one or more superior layers, where the inferior layers are deposited closer to the substrate surface than the superior layers, whereas: —the inferior layers are designed for providing load bearing capacity, —the superior layers are designed for providing galling resistance, —at least one superior layer (layer 5) is deposited having a multi-nanolayer structure formed by sublayers of the type A, B and C, said three kind of sublayers being nanolayers deposited alternate one on each other forming a sequence of the type . . . A/B/C/A/B/C/A . . . , wherein at least two sequences of one A nanolayer, one B nanolayer and one C nanolayer are deposited forming the multi-nanolayer structure wherein: —the nanolayer of type A is composed in at least 90 at.-% of chromium and nitrogen, —the nanolayer of type B is composed in at least 90 at.-% of titanium, aluminum and nitrogen, —the nanolayer of type C is composed I at least 90 at.-% of vanadium carbon and nitrogen, and —the layer thickness of the at least one superior layer (layer 5) is not lower than 0.5 μm and not higher than 15 μm.

A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

A method of sputtering a layer on a substrate includes positioning an HEDP magnetron in a vacuum with an anode, cathode target, magnet assembly, substrate, and feed gas; applying a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply to a pulse converting network (PCN), wherein the PCN comprises at least one inductor and at least one capacitor; and adjusting an amplitude, pulse duration, and frequency associated with the plurality of unipolar negative DC voltage pulses and adjusting a value of at least one of the at least one inductor and the at least one capacitor, thereby causing a resonance mode associated with the PCN. The substrate is operatively coupled to ground by a first diode, thereby attracting positively charged ions sputtered from the cathode target and plasma to the substrate. A corresponding apparatus and computer-readable medium are also disclosed.

An optical filter may include a substrate. An optical filter may include a set of optical filter layers disposed onto the substrate. The set of optical filter layers including a first subset of optical filter layers. The first subset of optical filter layers may include a silicon-germanium (SiGe) with a first refractive index. An optical filter may include a second subset of optical filter layers. The second subset of optical filter layers may include a material with a second refractive index. The second refractive index being less than the first refractive index.

A method of sputtering a layer on a substrate using a high-energy density plasma (HEDP) magnetron includes positioning the magnetron in a vacuum with an anode, cathode target, magnet assembly, substrate, and feed gas; applying unipolar negative direct current (DC) voltage pulses from a pulse power supply with a pulse forming network (PFN) to a pulse converting network (PCN); and adjusting an amplitude and frequency associated with the plurality of unipolar negative DC voltage pulses causing a resonance mode associated with the PCN. The PCN converts the unipolar negative DC voltage pulses to an asymmetric alternating current (AC) signal that generates a high-density plasma discharge on the HEDP magnetron. An increase in amplitude or pulse duration of the plurality of unipolar negative DC voltage pulses causes an increase in the amplitude of a negative voltage of the asymmetric AC signal in response to the PCN being in the resonance mode, thereby causing sputtering discharge associated with the HEDP magnetron to form the layer from the cathode target on the substrate. A corresponding apparatus and computer-readable medium are disclosed.