A method for coating a substrate with a diamond-like carbon (DLC) layer using a PECVD method with plasma generation by a magnetron target (magnetron PECVD) in a vacuum chamber, in which the magnetron, which is provided with the target, and the substrate are arranged, includes introducing at least one reactant gas into the plasma generated by the magnetron target in the vacuum chamber, as a result of which fragments of the reactive gas are formed, which are deposited forming the DLC layer on the substrate.

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

An apparatus is provided, comprising: a film formation chamber; a substrate holder provided in the film formation chamber and holding a substrate (S) to be formed with a film; a decompressor configured to reduce a pressure in the film formation chamber to a predetermined pressure; a discharge gas introducer configured to introduce a discharge gas into the film formation chamber; two or more sputtering electrodes each provided with a target (T1, T2) to be a film-forming material, the sputtering electrodes facing the substrate as a single substrate; a DC power source configured to supply electric power to the sputtering electrodes; two or more pulse-wave conversion switches connected between the DC power source and the sputtering electrodes, the pulse-wave conversion switches each being configured to convert a DC voltage to be applied to each of the sputtering electrodes to a pulse-wave voltage; a programmable transmitter configured to be programmable with a pulse generation control signal pattern corresponding to the electric power to be supplied to each of the sputtering electrodes, the programmable transmitter being further configured to control each of the pulse-wave conversion switches in accordance with the program; and a pulsed reactive gas introducer configured to control introduction of the reactive gas from the reactive gas introducer to the film formation chamber on the basis of the pulse generation control signal pattern from the electric power controller.

A treatment system includes a treatment tool and an energy source apparatus. The treatment tool includes a heater and bipolar electrodes to grip a treatment target. The energy source apparatus supplies electrical energy to the treatment tool. A processor controls the output to the bipolar electrodes and the heater. The processor causes a high-frequency electric power to be output to the bipolar electrodes and detects a parameter that varies depending on tissue volume of the treatment target. The processor sets a target value related to an output control process for controlling the output to the heater. The processor controls the output to the heater so as to modify the treatment target with the heat of the heater. The processor increases the output and temperature to the heater until at least a predetermined point of time after starting the output control process for controlling the output to the heater.

Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. The first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. The first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. The second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.

A method for forming a film of LiCoO2 involves applying to a substrate a layer of LiCoO2 from a metallic target of cobalt (Co) in vapours of lithium (Li) by reactive magnetron sputtering in a vacuum chamber. Lithium vapours are fed in a regulated manner to the magnetron through a gas distributor, connected to a working gas inlet and to a lithium feed inlet, by feeding a flow of a carrier gas through a heated lithium-containing reservoir which is heated to the melting point of lithium. The regulated feed of the lithium vapours is achieved by adjusting the flow of carrier gas through the heated reservoir. A device for forming a film of LiCoO2 comprises a vacuum chamber, and a magnetron with a metallic target of cobalt. On one side or about the perimeter of the magnetron is a gas distributor that is connected to a working gas inlet and, via a tap and/or a valve, to a heated lithium-containing reservoir that is connected to a carrier gas inlet. The gas distributor can be cellular or convoluted. The heated lithium-containing reservoir can be disposed inside or outside the vacuum chamber. The result is an increase in the deposition rate of a LiCoO2 film, an increase in the efficiency of the equipment and a reduction in the cost of mass-producing thin-film solid-state batteries.

A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.

The present disclosure relates to an ion implantation tool source and gas delivery system. The system can include a gas source comprising one or more gas supply vessels, an ion implanter arc chamber connected to the gas source, and a gallium target contained within the ion implanter arc chamber. The one or more gas supply vessels can supply a mixture of gases of hydrogen and fluoride. The hydrogen can be from 5% to 60% of the mixture of gases.

A compound thin film is obtained with a high deposition rate and consistent film quality in reactive sputtering. A thin film is formed by performing voltage monitoring control and gas flow rate monitoring control. The voltage monitoring control is control in which a gas flow rate is adjusted such that the value of a target voltage is brought closer to the value of a desired voltage by monitoring the target voltage in a first cycle time. The gas flow rate monitoring control is control in which the desired voltage for the target voltage is changed such that the value of the gas flow rate is brought closer to the value of a desired gas flow rate by monitoring the gas flow rate in a second cycle time.

A film forming apparatus includes: a chamber main body defining a chamber; a slit plate partitioning the chamber into a first space and a second space below the first space, the slit plate having a slit penetrating therethrough; a holder holding a target in the first space; a stage for supporting a substrate, the stage being movable in a moving direction perpendicular to a longitudinal direction of the slit in a moving area including an area directly below the slit; and a mechanism for moving the stage along the moving direction. In order to suppress scattering of particles from the target to another area other than the moving area in the second space through the slit, the stage has one or more protruding portions which provide upwardly and/or downwardly bent portions in a path around the stage between the slit and the another area in the second space.