A piezoelectric element includes a substrate, and a lower electrode, a piezoelectric film, an adhesion layer, and an upper electrode provided on the substrate in this order, in which the piezoelectric film has a perovskite structure that is preferentially oriented to a (100) plane and is a composite oxide represented by the compositional formula Pb[(Zr.sub.xTi.sub.1-x).sub.1-yNb.sub.y]O.sub.3, where x satisfies 0<x<1 and y satisfies 0.10y<0.13, I.sub.(200)/I.sub.(100), which is a ratio between a diffraction peak intensity I.sub.(100) from the perovskite plane and a diffraction peak intensity I.sub.(200) from a perovskite plane as measured by X-ray diffraction method, satisfies 0.85I.sub.(200)/I.sub.(100)1.00, and the adhesion layer contains a metal having an ionization energy of 0.34 eV or less.

A method for depositing a layer (2) of a coating which is reflective or anti-reflective to DUV radiation onto a surface (3a) of a substrate (3) for a DUV optical element includes: transferring a coating material (M) into the gas phase in a coating source (4), moving the substrate relative to the coating source along a predetermined movement path (5), and varying a coating rate (RB) and/or a rotation speed (?(t)) of a spin axis (7) of the substrate during the movement along the movement path. A covering element (6) is arranged between the coating source (4) and the surface and covers the surface at least partially during the movement of the substrate. Also disclosed is an optical element for the DUV wavelength range, with a substrate and a reflective or anti-reflective coating (B) applied to the substrate, having at least one layer deposited by the disclosed method.

A sputtering source includes two facing plate shaped targets and a magnet arrangement along each of the targets. An open coating outlet area from the reaction space between the targets is limited by facing rims of the two plate shaped targets. Catcher plates along each of the rims respectively project in a direction from the rims towards each other into the open coating outlet area, thereby restricting the open coating outlet area as limited by the mutually facing rims of the two plate shaped targets.

Embodiments of the invention provide a process chamber and a semiconductor processing apparatus. According to at least one embodiment, the process chamber includes a reaction compartment, a gas introducing system and a wafer transfer device. The reaction compartment is provided in the process chamber and used for performing a process on a wafer, the gas introducing system is used for providing processing gas to the reaction compartment, and the wafer transfer device is used for transferring the wafer into the reaction compartment. A lining ring assembly is provided in the reaction compartment, and is configured such that a flow uniformizing cavity is formed between the lining ring assembly itself and an inner side wall of the reaction compartment, so as to uniformly transport the processing gas, from the gas introducing system, into the reaction compartment through the flow uniformizing cavity.

A method of forming a layer including disposing a first target and a second target to face each other with a first space therebetween, disposing a substrate to face the first space, generating plasma between the first target and the second target to perform sputtering on the substrate, disposing a capture net between the substrate and the the first space, and capturing anions and/or electrons that propagate toward the substrate from the first space.

A piezoelectric element includes a substrate, and a lower electrode, a piezoelectric film, an adhesion layer, and an upper electrode provided on the substrate in this order, in which the piezoelectric film has a perovskite structure that is preferentially oriented to a (100) plane and is a composite oxide represented by the compositional formula Pb[(Zr.sub.xTi.sub.1-x).sub.1-yNb.sub.y]O.sub.3, where x satisfies 0<x<1 and y satisfies 0.10?y<0.13, I.sub.(200)/I.sub.(100), which is a ratio between a diffraction peak intensity I.sub.(100) from the perovskite plane and a diffraction peak intensity I.sub.(200) from a perovskite plane as measured by X-ray diffraction method, satisfies 0.85?I.sub.(200)/I.sub.(100)?1.00, and the adhesion layer contains a metal having an ionization energy of 0.34 eV or less.

A coated medical instrument can include a first layer bonded to a metal substrate surface of a medical instrument, a second layer bonded to the first layer, and a third layer disposed on the second layer, The first layer comprises chromium (Cr), hafnium (Hf), titanium (Ti), and/or niobium (Nb). The second layer comprises a nitride, oxide, carbide, carbonitride, or boride of chromium (Cr), hafnium (Hf), niobium (Nb), tungsten (W), titanium (Ti), aluminum (Al), zirconium (Zr), and/or silicon (Si). The third layer comprises a nitride, oxide, carbide, boride, oxynitride, oxycarbide, or oxycarbonitride of chromium (Cr), hafnium (Hf), niobium (Nb), tungsten (W), titanium (Ti), aluminum (Al), zirconium (Zr), and/or silicon (Si). Methods for making coated medical instruments are also disclosed herein.

A sputter deposition source for depositing a material on a substrate is described. The sputter deposition source includes an array of magnetron sputter cathodes arranged in a row for coating the substrate in a deposition area on a front side of the array. At least one magnetron sputter cathode of the array includes a first rotary target rotatable around a first rotation axis (A1); and a first magnet assembly arranged in the first rotary target and configured to provide a closed plasma racetrack (P) on a surface of the first rotary target that extends along the first rotation axis (A1) on a first side and on a second side of the at least one magnetron sputter cathode. Further described is a magnetron sputter cathode for a sputter deposition source and a method of depositing a material on a substrate.

The present invention relates to a method for manufacturing a metal strip or sheet, including the steps of providing a substrate made from stainless steel; and depositing a chromium-nitride layer on the substrate by physical vapor deposition (PVD) in a deposition installation comprising a deposition chamber and a chromium target arranged in the deposition chamber. The deposition chamber has a deposition area with a length strictly smaller than the length of the deposition chamber and at least a first prohibited area. During the deposition, the chromium nitride is deposited on the substrate only in the deposition area and no chromium nitride is deposited on the substrate in the prohibited area.

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.