A method of forming a semiconductor structure includes, in a radio frequency (RF) deposition chamber, depositing a titanium film using physical vapor deposition and forming a graded hard mask film by reactive sputtering the titanium film with nitrogen in the RF deposition chamber. The graded hard mask film is a titanium nitride film with a graded vertical concentration of nitrogen. The method may further include, during deposition of the titanium film and during formation of the graded hard mask film, modulating one or more parameters of the RF deposition chamber, such as modulating an auto capacitance tuner (ACT) current, modulating the RF power, and modulating the pressure of the RF deposition chamber.

A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 m over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is less than the first average surface roughness.

An evaporation apparatus (100) for depositing material on a flexible substrate (160) supported by a processing drum (170) is provided. The evaporation apparatus includes: a first set (110) of evaporation crucibles aligned in a first line (120) along a first direction for generating a cloud (151) of evaporated material to be deposited on the flexible substrate (160); and a gas supply pipe (130) extending in the first direction and being arranged between an evaporation crucible of the first set (110) of evaporation crucibles and the processing drum (170), wherein the gas supply pipe (130) includes a plurality of outlets (133) for providing a gas supply directed into the cloud of evaporated material, and wherein a position of the plurality of outlets is adjustable for changing a position of the gas supply directed into the cloud of evaporated material.

A black member includes a base and a black layer laminated on the base. The black layer contains titanium aluminum nitride, titanium silicon nitride, or titanium aluminum silicon nitride. The black layer may also contain at least one type of elements selected from the group consisting of oxygen, fluorine, and carbon. When the black layer contains carbon, and assuming that a total amount of elements contained in the black layer is 100 at %, the black layer contains carbon of 10 at % or less. In a color evaluation according to an L*, a*, b* color system (CIE color system), the black layer satisfies L*48.0, 2.0a*3.0, and 3.5b*3.0.

A multilayer electrode on a substrate (10) comprising titanium (20) and titanium-rich titanium nitride (30) and titanium-poor titanium nitride (40), particularly suitable for the application to thermoplastic substrates, in particular for the purpose of the impedance measurement in aqueous biological media, and method for the production thereof.

Disclosed are coatings made of inorganic materials on molds for glass molding, particularly, a graded coating of element diffusion inhibition and adhesion resistance on molds for glass molding. The graded coating includes a Cr adhesion layer which is bonded with a substrate, a CrN intermediate layer and a Cr.sub.xW.sub.yN.sub.(1-x-y) surface layer, where 0.15<x<0.4, and 0.2y<0.45. The graded coating has excellent crack growth suppression and adhesion resistance.

Apparatus for recording data and method for making the same. In accordance with some embodiments, a magnetic layer is supported by a substrate and comprises a magnetic magnetic material, a non-magnetic material, and an energy assisted segregation material. The segregation material enhances segregation of the non-magnetic material into grain boundaries within the layer at an elevated, moderate energy level.

The present invention refers to a graded barrier film comprising a layered structure, wherein the layered structure comprises a first layer consisting of metal oxide; an intermediate layer consisting of metal nitride or metal oxynitride which is arranged on the first layer; and a third layer consisting of a metal oxide which is arranged on the intermediate layer. The present invention further refers to a sputtering method for manufacturing this graded barrier film and a device encapsulated with this graded barrier film.

An electronic device can include a housing, a display positioned within the housing; and a cover glass disposed over the display and attached to the housing. The cover glass can include a glass sheet; a hard coat layer disposed on the glass sheet, having a hardness greater than a hardness of the glass sheet; and a gradient layer deposited on the hard coat layer and having a composition that transitions from a first composition at the hard coat layer to a second composition at a top surface of the gradient layer. The first composition can be predominantly a composition of the hard coat layer and the second composition is different than the first composition. The second composition can be predominantly SiO2. The hard coat layer can include SiON. The cover glass can include an intermediate gradient layer disposed between the glass sheet and the hard coat layer.

A hard carbon coating and a method to improve its adhesion on components and tools subjected to high loads or subjected to extreme friction, wear and contact with other parts. The metal carbide transition layer is situated between the adhesivepromoting layer deposited directly onto the substrate surface and a top hard carbon coating. The metal carbide transition layer has a denser microstructure and improved mechanical properties in order to resist failure by spalling.