A method is provided for depositing a layer on a substrate inside a vacuum chamber by a magnetron sputtering device comprising at least two magnetron cathodes, each equipped with one target, at least one additional electrode, wherein a separate power supply unit is allocated to each magnetron cathode and wherein, in addition to at least one working gas, at least one reactive gas is introduced into the vacuum chamber. In a first phase, a pulsed negative direct current voltage is conducted from each power supply unit to the corresponding magnetron cathode, wherein the power supply units are operated in the push-pull mode. In a second phase, the pulsed direct current voltages provided by the power supply units are switched between the corresponding magnetron cathode and the additional electrode. An electric voltage is applied to the substrate or an electrode at the back of the substrate.

A method of manufacturing an article comprises performing ion assisted deposition (IAD) to deposit a protective layer on at least one surface of the article, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 m and an average surface roughness of 10 micro-inches or less.

The invention relates to the deposition of optical precision films with high uniformity, precision, particle freedom and low absorption on the substrate. For this purpose, a method and a device are proposed. The approach is the use of target materials and also possibly of surfaces in the sputtering field. Particularly high uniformity and also particularly low residual absorption are achieved with these materials. The invention is suitable for the production of optical thin-film filters, as are used for example in laser material machining, laser components, optical sensors for measuring technology, or in medical diagnostics.

A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 m over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.

A method of manufacturing an article comprises performing ion assisted deposition (IAD) to deposit a protective layer on at least one surface of the article, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 m and an average surface roughness of 10 micro-inches or less.

A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 m over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.

A method of controlling a reactive sputter deposition process includes selecting a control process parameter for a target material and a reactive gas, the target material included in a target acting as a cathode, the reactive sputter deposition process involving forming a compound from a reaction between the target material and reactive gas species associated with the reactive gas in a vacuum chamber; establishing an operation regime for the reactive sputter deposition process for a given target power; and performing, based on the selected control process parameter and the established operation regime, the reactive sputter deposition process in a transition region between a metallic mode and a covered mode through a controlled pulsed reactive gas flow rate into the vacuum chamber, such that a stabilized reactive deposition of the compound on a substrate is achieved, the deposited compound on the substrate comprising a dielectric stoichiometric film.

A method of manufacturing an article comprises providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 m and an average surface roughness of 10 micro-inches or less.

Provided is an optical film (composite tungsten oxide film containing cesium, tungsten, and oxygen), a sputtering target, and a method of producing an optical film by which film formation conditions can be easily obtained. An optical film of the present invention has transmissivity in a visible wavelength band, has absorbance in a near-infrared wavelength band, and has radio wave transparency, characterized in that the optical film comprises cesium, tungsten, and oxygen, and a refractive index n and an extinction coefficient k of the optical film at each of wavelengths [300 nm, 350 nm, 400 nm, 450 nm, . . . , 1700 nm] specified at 50 nm intervals in a wavelength region from 300 nm to 1700 nm are set respectively within specified numerical ranges.