Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp.sup.2 to sp.sup.3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

The present invention discloses a coated cutting tool having a hard coating film on a surface of the tool. The hard coating film is a nitride, the content ratio of titanium (Ti) with respect to a total amount of metal elements (including semimetal elements) is in a range of 70 at % to 95 at %, the content ratio of silicon (Si) with respect to the total amount of metal elements (including semimetal elements) is in a range of 5 at % to 30 at %, and the content ratio of argon (Ar) with respect to the total amount of metal elements (including semimetal elements) and non-metal elements is 0.1 at % or less. The hard coating film has a NaCl type crystal structure and has an average crystal grain size in a range of 5 nm to 30 nm.

According to one embodiment, a film formation apparatus that suppresses effects of pre-processing and enables stable film formation is provided. A film formation apparatus of the present disclosure includes a chamber that can be made vacuum, a transporter that is provided inside the chamber and that circulates and transports a workpiece in a trajectory of a circle, a film formation unit that forms film by sputtering on the workpiece circulated and transported by the transporter, a load-lock room that loads the workpiece into and out of the chamber relative to air space while keeping an interior of the chamber vacuum, and a pre-processing unit that is provided in the chamber at a position adjacent to the load-lock room and that performs pre-processing to the workpiece loaded in from the load-lock room in a state distant from the transporter.

Provided is a cutting tool that can have a long tool life even when used to cut soft metals in particular. The cutting tool comprises a base body and a hard carbon film arranged on the base body, the hard carbon film includes an amorphous phase and a graphite phase, the density of the hard carbon film is no less than 2.5 g/cm.sup.3 and no more than 3.5 g/cm.sup.3, the degree of crystallinity of the hard carbon film is no more than 6.5%, and the average coordination number of the amorphous phase is no less than 2.5 and no more than 4.

A treatment method performed by a film processing apparatus including: a first discharge electrode unit and a second discharge electrode unit respectively including magnets that form a magnetic field; and an AC power source capable of alternately switching polarities of the first discharge electrode unit and the second discharge electrode unit. In the treatment method, a predetermined surface treatment of a film F is performed by generating a plasma P while alternately switching polarities of the first discharge electrode unit and the second discharge electrode unit by using high-frequency power supplied from the AC power source.

A preparation method for a high-refractive index hydrogenated silicon film, a high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece. The method includes: (a) by magnetic controlled Si target sputtering, Si deposits on a base body, forming a silicon film, which (b) forms an oxygenic hydrogenated silicon film in environment of active hydrogen and active oxygen, the amount of active oxygen accounts for 4%-99% of the total amount of active hydrogen and active oxygen, or, a nitric hydrogenated silicon film in environment of active hydrogen and active nitrogen, the amount of active nitrogen accounts for 5%-20% of the total amount of active hydrogen and active nitrogen. Sputtering and reactions are separately conducted, Si first deposits on the base body by magnetic controlled Si target sputtering, and then plasmas of active hydrogen and active oxygen/nitrogen react with silicon for oxygenic or nitric SiH.

Various embodiments herein relate to electrochromic devices, methods of fabricating electrochromic devices, and apparatus for fabricating electrochromic devices. In a number of cases, the electrochromic device may be fabricated to include a particular counter electrode material. The counter electrode material may include a base anodically coloring material. The counter electrode material may further include one or more halogens. The counter electrode material may also include one or more additives.

The invention relates to a method for coating work pieces in a vacuum treatment system having a first electrode embodied as a target, which is part of an arc vaporization source. Using the first electrode, an arc is operated with an arc current and vaporizes material. A bias voltage is applied to a bias electrode, which includes a second electrode that is embodied as a work piece holder, together with the work pieces. Metal ion bombardment is carried out either to pretreat the work pieces or in at least one transition from one layer to an adjacent layer of a multilayer system, so that neither a significant material removal nor a significant material buildup occurs, but instead, introduces metal ions into a substrate surface or into a layer of a multilayer system.

The method of preparing a laminate includes: preparing a process target, which is a laminate before being processed, where a light-shielding film has been disposed; and preparing a cleaned laminate through a first cleaning including applying UV rays and carbonated water to the process target, wherein the light-shielding film includes a transition metal and an element selected from the group consisting of oxygen, nitrogen, and carbon.

A precious metallic laminate may include a first transparent substrate, a transparent transition layer deposited on the first transparent substrate, and a metallic layer deposited on the transparent transition layer. The metallic layer may include a precious metal. The laminate may include a second transparent substrate covering the metallic layer.