The present invention provides a stacked body including a germanium layer, an organic material layer, a zinc compound layer, and the like, thereby exhibiting a specific color and glossiness, transmitting electromagnetic waves, and having excellent water resistance, and more particularly, a stacked body including a substrate and a deposition layer formed on the substrate, wherein the deposition layer includes the organic material layer made of an organic material, the zinc compound layer made of zinc sulfide (ZnS) or zinc selenium (ZnSe), and the germanium layer made of germanium (Ge) or a germanium alloy.

Techniques for precisely controlling the composition of volatile components (such as sulfur (S), selenium (Se), and tin (Sn)) of chalcogenide semiconductors in real-timeduring production of the material are provided. In one aspect, a method for forming a chalcogenide semiconductor material includes providing a S source(s) and a Se source(s); heating the S source(s) to form a S-containing vapor; heating the Se source(s) to form a Se-containing vapor; passing a carrier gas first through the S-containing vapor and then through the Se-containing vapor, wherein the S-containing vapor and the Se-containing vapor are transported via the carrier gas to a sample; and contacting the S-containing vapor and the Se-containing vapor with the sample under conditions sufficient to form the chalcogenide semiconductor material. A multi-chamber processing apparatus is also provided.

Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes depositing a first CdTe-based layer on a CdTe-based template at a rate of greater than 1 m/min. Each of the first CdTe-based layer and the CdTe-based template has a single-crystal structure and/or a large-grain polycrystalline structure. The depositing is performed by physical vapor deposition.

Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.

The present invention relates to a method for obtaining a photovoltaic CZTS thin-film solar cell including arranging a precursor solution, preparing a substrate, and depositing said precursor solution on said substrate.

Techniques for precisely controlling the composition of volatile components (such as sulfur (S), selenium (Se), and tin (Sn)) of chalcogenide semiconductors in real-timeduring production of the material are provided. In one aspect, a method for forming a chalcogenide semiconductor material includes providing a S source(s) and a Se source(s); heating the S source(s) to form a S-containing vapor; heating the Se source(s) to form a Se-containing vapor; passing a carrier gas first through the S-containing vapor and then through the Se-containing vapor, wherein the S-containing vapor and the Se-containing vapor are transported via the carrier gas to a sample; and contacting the S-containing vapor and the Se-containing vapor with the sample under conditions sufficient to form the chalcogenide semiconductor material. A multi-chamber processing apparatus is also provided.

The invention provides a quantum dot color film substrate, manufacturing method thereof and an LCD apparatus. The manufacturing method comprises forming an organic transparent photo-resist layer on transparent sub-pixel areas of a transparent substrate; forming a red quantum dot layer, a green quantum dot layer on corresponding red sub-pixel areas and green sub-pixel areas respectively by a sputter printing process using the organic transparent layer as stop walls to improve printing precision. The manufacturing method is simple, and requires less time and facility cost.

A gas barrier film including a polymer base, an undercoat layer that contains, as the main component, an acrylic resin having at least one side chain selected from the group consisting of the side chains (I) to (III) mentioned below, and an inorganic layer, wherein the undercoat layer and the inorganic layer are arranged in this order on at least one surface of the polymer base in such a manner that the undercoat layer and the inorganic layer are in contact with each other: (I) a side chain having an acrylic polymer skeleton; (II) a side chain having a dimethylsiloxane skeleton; and (III) a side chain having a skeleton containing a fluorine atom.

A concrete having a smooth surface, which is wholly or partly coated with a polymer film obtained by polymerisation under the action of radiation, where the film is itself wholly or partly coated with a thin photovoltaic film.

The present invention concerns a method for the manufacture of the first layer of a back contact layer for thin-layer solar cells in superstrate configuration. In the prior art, this layer is deposited as a compound, for example as a layer of Sb.sub.2Te.sub.3. In accordance with the invention, however, a tellurium-rich surface layer of the cadmium telluride layer is produced, on which a first material is deposited which is capable of forming an electrically conductive second material with tellurium and of producing the second material by reaction of the first material and tellurium in the surface layer. The second material forms the first layer of the back contact layer.