An oxide superconducting wire includes a superconducting laminate including an oxide superconducting layer disposed, either directly or indirectly, on a substrate, and a stabilization layer which is a Cu plating layer covering an outer periphery of the superconducting laminate, and a Vickers hardness of the Cu plating layer is in the range of 80 to 190 HV.

Embodiments described herein relate to a method of fabricating a perovskite film device. The method includes heating and degassing a substrate within a processing system; depositing a first perovskite film layer over a surface of the substrate using multi-cathode sputtering deposition within a processing chamber; depositing a second perovskite film layer over the first perovskite film layer using multi-cathode sputtering deposition within a processing chamber; and annealing the substrate with the first perovskite film layer and second perovskite film layer disposed thereon. The first perovskite film layer includes a first perovskite material. The second perovskite film layer includes a second perovskite material.

A sputtering target material comprises an oxide including elemental indium (In), elemental zinc (Zn), and an additive element (X). The additive element (X) is one or more elements selected from tantalum (Ta), strontium (Sr), and niobium (Nb). In the sputtering target material, the atomic ratios between the elements satisfy the formulae (1) to (3) below. The sputtering target material has a relative density of 95% or more.

[00001]$\begin{array}{cc}0.4\le \left(\text{In+X}\right)/\left(\text{In+Zn+X}\right)\le 0.8& \text{­­­(1)}\end{array}$

[00002]$\begin{array}{cc}0.2\le \text{Zn}/\left(\text{In+Zn+X}\right)\le 0.6& \text{­­­(2)}\end{array}$

A film structure includes a substrate (11) which is a silicon substrate including an upper surface (11a) composed of a (100) plane, an alignment film (12) which is formed on the upper surface (11a) and includes a zirconium oxide film which has a cubic crystal structure and is (100)-oriented, and a conductive film (13) which is formed on the alignment film (12) and includes a platinum film which has a cubic crystal structure and is (100)-oriented. An average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is greater than an average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).

An oxide superconducting wire includes a superconducting laminate including an oxide superconducting layer disposed, either directly or indirectly, on a substrate, and a stabilization layer which is a Cu plating layer covering an outer periphery of the superconducting laminate, and a Vickers hardness of the Cu plating layer is in the range of 80 to 190 HV.

An article has a body having a protective coating. The protective coating is a thin film that includes a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of M.sub.xO.sub.yF.sub.z, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

A calcium-magnesium-alumino-silicate (CMAS)-reactive thermal barrier coating includes a ceramic coating and a CMAS-reactive overlay coating, wherein the CMAS-reactive overlay coating conforms to a surface of the ceramic coating and comprises a compound that forms a stable high melting point crystalline precipitate when reacted with molten CMAS at a rate that is competitive with CMAS infiltration kinetics into the thermal barrier coating. The ceramic coating phase is stable with the CMAS-reactive overlay coating.

A dental device is improved in its ability to produce hydroxyl apatite by having a layer of mineral trioxide aggregate (MTA) deposited thereon. A tile of MTA is prepared, heat treated and sintered to produce a micronized tile of MTA that can then be deposited by physical vapor depositions, hot isostatic pressing, molding or other conventional technique.

According to various aspects and embodiments, a system and method for providing an optical element is disclosed. In one example, the optical element includes a substrate formed from a Nanocomposite Optical Ceramic (NCOC) material that includes a first oxide nanograin material dispersed in a second oxide nanograin material, and a compressive layer of the NCOC material formed on a surface of the substrate.

Methods and apparatus that monitors deposition on a shutter disk in-situ. In some embodiments that apparatus may include a process chamber with an internal processing volume, an enclosure disposed external to the internal processing volume where the enclosure accepts a shutter disk when the shutter disk is not in use in the internal processing volume, a shutter disk arm that moves the shutter disk back and forth from the enclosure to the internal processing volume, and at least one sensor integrated into the enclosure. The at least one sensor is configured to determine at least one film property of a material deposited on the shutter disk after a pasting process in the internal processing volume.