An apparatus is provided for plating a lithium (Li)-compound thin film. In the thin film, Li is obtained through thermal evaporation, and titanium (Ti) or other metal by using arc plasma. The elements converted into gas phase are co-deposited in a plasma environment with a reaction gas (oxygen) to be activated as excited atoms or molecules for reaction. In the end, all of the constituent elements are deposited on a substrate to form the Li-compound thin film. Thus, reaction efficiency is high with a fast deposition rate. The composition ratio of each element is independently determined to control its yield according to the requirement. Hence, the present invention greatly enhances the fabrication rate with lowered production cost for applications in the thin-film battery industries.

A method of preparing a hydrated calcium silicate (CSH) nano-film. The method includes: 1) synthesizing a hydrated calcium silicate powder having a calcium to silicon ratio (Ca/Si) of 0.5-3.0; 2) calcining the CSH powder obtained in 1) for 2-3 hours under a temperature of 150-250 C., cooling to approximately 25 C., and pressing the CSH powder under a pressure of 100-200 megapascal, to yield a target material; 3) fixing a substrate on a sample table of a magnetron sputtering apparatus, placing the target material obtained in 2) in a target position of the magnetron sputtering apparatus, pre-sputtering the target material for 5-10 minutes, rotating the substrate at a constant speed, sputtering the target material for 30-300 minutes, to yield a nano-film; and 4) soaking the nano-film obtained in 3) into in a saturated aqueous solution of calcium hydroxide at approximately 25 C. for 1-3 days.

An optical member includes a transparent substrate, an alumina-based first transparent ceramic layer on the transparent substrate, and an alumina-based second transparent ceramic layer on the alumina-based first transparent ceramic layer such that the alumina-based first transparent ceramic layer is between the transparent substrate and the alumina-based second transparent ceramic layer. A refractive index of the alumina-based second transparent ceramic layer is smaller than a refractive index of the alumina-based first transparent ceramic layer. The alumina-based first transparent ceramic layer and the alumina-based second transparent ceramic layer may have independent compositions, and the independent compositions may each be a silica-free composition.

A light modulation film (1) includes a light modulation layer (30) whose state is reversibly changed between a transparent state by hydrogenation and a reflective state by dehydrogenation, and a catalyst layer (40) that promotes hydrogenation and dehydrogenation in the light modulation layer, in this order on a polymer film substrate (10). light modulation layer (30) includes a light modulation region (32) having a thickness of 10 nm or more on a catalyst layer (40)-side, and an oxidized region (31) on a polymer film substrate (10)-side.

In one embodiment, a method for forming an alkali resistant coating includes forming a first oxide material above a substrate and forming a second oxide material above the first oxide material to form a multilayer dielectric coating, wherein the second oxide material is on a side of the multilayer dielectric coating for contacting an alkali. In another embodiment, a method for forming an alkali resistant coating includes forming two or more alternating layers of high and low refractive index oxide materials above a substrate, wherein an innermost layer of the two or more alternating layers is on an alkali-contacting side of the alkali resistant coating, and wherein the innermost layer of the two or more alternating layers comprises at least one of: alumina, zirconia, and hafnia.

A method for improving the resistance of a ceramic PTC thermal element to reduction is provided, belonging to the technical field of preparation of electronic components. The ceramic PTC thermal element is barium titanate based. The method includes: filling a material container body with the barium titanate based ceramic PTC thermal element; loading the material container body containing the element into a magnetron sputtering apparatus; sputtering, by the magnetron sputtering apparatus, an inorganic material as a target material onto the surface of the element when the material container body is in a rotating state, thereby forming a thin film layer of the inorganic material on the surface; and after the magnetron sputtering is completed, taking out the material container body containing the element with the thin film layer of the inorganic material combined on the surface, and performing high-temperature heat treatment.

A method of forming a conductive electrolyte layer according to various embodiments of the present disclosure for achieving the objects is disclosed. The method includes loading a substrate into a sputtering chamber, connecting multiple targets to the chamber, injecting a mixed gas into the chamber, supplying power to each of the multiple targets and forming the conductive electrolyte layer on one surface of the substrate, and sintering the conductive electrolyte layer at a set sintering temperature.

A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a Nb.sub.2O.sub.5 powder, a K.sub.2CO.sub.3 powder, and a Na.sub.2Co.sub.3 powder, pulverizing the mixed powder to achieve a grain size d.sub.50 of 100 m or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900 C. or higher and less than 1150 C., and a load of 150 to 400 kgf/cm.sup.2. A high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method is provided.

A piezoelectric device comprises: a substrate (12) and a lead magnesium niobate-lead titanate (PMNPT) piezoelectric film on the substrate (12). The PMNPT film comprises: a thermal oxide layer (20) on the substrate (12); a first electrode above on the thermal oxide layer (20); a seed layer (26) above the first electrode; a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer (16) on the seed layer (26), and a second electrode on the PMNPT piezoelectric layer (16). The PMNPT film comprises a piezoelectric coefficient (d33) of greater than or equal to 200 pm/V.

A sputtering target for the production of layers such as optical layers, the layers produced by the target, and a method for producing the target are described. In addition to Si or a combination of Si and Al, the sputtering target contains metal oxide(s), a combination of at least two metal oxides, or a combination containing at least one metal oxide in the form of an alloy or in the form of a mixture. The sputtering target has a metal oxide fraction generated by the Si and Al and the metal oxide(s) or the combination thereof. Preferably, the metal oxide in the sputtering target is a metal oxide selected from ZrO.sub.2, Ta.sub.2O.sub.5, Y.sub.2O.sub.3, HfO, CaO, MgO, Ce.sub.2O.sub.3, Al.sub.2O.sub.3, TiO.sub.2 and Nb.sub.2O.sub.5.