Various embodiments may provide an electromechanical responsive film. The electromechanical responsive film may include a composition including sodium (Na), potassium (K), niobium (Nb) and oxygen (O). The composition may have a formula (Na.sub.xK.sub.y)NbO.sub.3-δ, wherein 0≤x<1, wherein 0≤y<1, and wherein 0<x+y<1. The composition may satisfy at least one condition selected from a group consisting of a first condition of (x+y+4)/2≤(3−δ)≤(x+y+5)/2 and a second condition of 0<δ<1.

The present invention relates to a method of forming a coating layer having plasma resistance, the method comprising steps of: preparing a substrate by placing the substrate in a substrate fixing device inside a process chamber; evaporating a Y.sub.2O.sub.3 deposition material provided in a solid form in an electron beam source by irradiating an electron beam on the Y.sub.2O.sub.3 deposition material; generating radical particles having activation energy by injecting a process gas containing oxygen for forming radicals into a RF energy beam source; irradiating an RF energy beam including the radical particles generated in the RF energy beam source, toward the substrate; depositing a thin film in which the evaporated deposition material is deposited on the substrate by being assisted by the RF energy beam, and densifying the thin film in which the deposition material deposited on the substrate forms a densified film by ion bombardment of the RF energy beam.

An inorganic solid-state electrochromic module containing an inorganic transparent conductive film, including a transparent substrate and a first transparent conductive layer, a first transparent metal layer, a first transparent protective layer, an inorganic electrochromic layer, an inorganic ion conductive layer, an inorganic ion storage layer, a second transparent metal layer, a second transparent protective layer, a second transparent conductive layer, a encapsulating film and a transparent front plate successively formed on the transparent substrate.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

A method for making an improved nuclear fuel cladding tube includes reinforcing a Zr alloy tube by first winding or braiding ceramic yarn directly around the tube to form a ceramic covering, then physically bonding the ceramic covering to the tube by applying a first coating selected from the group consisting of Nb, Nb alloy, Nb oxide, Cr, Cr oxide, Cr alloy, or combinations thereof, by one of a thermal deposition process or a physical deposition process to provide structural support member for the Zr tube, and optionally applying a second coating and optionally applying a third coating by one of a thermal deposition process or a physical deposition process. If the tube softens at 800° C.-1000° C., the structural support tube will reinforce the Zr alloy tube against ballooning and bursting, thereby preventing the release of fission products to the reactor coolant.

An article comprises a body having a protective coating. The protective coating is a thin film that comprises a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of M.sub.xO.sub.yF.sub.z, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

The invention relates to a glass substrate including a stack of coating layers having control properties, in which stack comprises at least one niobium metal layer located between a layer of a dielectric material selected from Si.sub.3N.sub.4 or TiOx and a layer of a protective metal material selected from TIN or Ni—Cr, conferring solar control and heat resistance properties on the glass substrate.

A method of manufacturing by magnetron cathode sputtering an electrolyte film for use in solid oxide cells (SOC). This method comprises the steps consisting of heating a substrate to a temperature ranging from 200° C. to 1200° C.; followed by subjecting the substrate to at least two treatment cycles, each treatment cycle comprising: 1) depositing one layer of a metal precursor on the substrate by magnetron cathode sputtering of a target made up of the metal precursor, the sputtering being carried out under elemental sputtering conditions; followed by 2) oxidation-crystallisation of the metal precursor forming the layer deposited on the substrate in the presence of oxygen to obtain the transformation of the metal precursor into the electrolyte material; and in that the substrate is kept at a temperature ranging from 200° C. to 1200° C. for the entire duration of each treatment cycle.

A method for forming a thin film by a deposition process, including: a substrate is placed in a deposition chamber; a precursor is introduced into the deposition chamber to form an adsorption layer on a surface of the substrate; a reactant is introduced into the deposition chamber and reacts with the adsorption layer to form a thin film layer on the surface of the substrate and generate reaction byproducts; a vacuuming operation is performed on the deposition chamber to decrease a chamber pressure therein to reduce desorption energy of the reaction byproducts formed at the surface of the thin film layer; plasma is introduced into the deposition chamber to increase energy of the surface of the formed thin film layer; a cleaning gas is introduced into the deposition chamber to discharge the reaction byproducts and the residual precursor and reactant in the deposition chamber.