A magnetron plasma sputtering arrangement including an evacuable chamber, wherein in the evacuable chamber a tuning electrode, operatively connected to a biasing source with respect to ground, and including an aperture defining at least one axis of length, is arranged in a flow path for plasma between a sputtering head and a substrate. A plasma sputtered material originating at a sputtering target will traverse the aperture before depositing onto the surface of the substrate as a thin film.

A transparent conductive film (3) includes a polycrystal (31). The polycrystal (31) has grains (32). The grains (32) have an average value Df of a maximum Feret diameter of 160 to 400 nm.

Embodiments of the present disclosure relate to forming multi-depth films for the fabrication of optical devices. One embodiment includes disposing a base layer of a device material on a surface of a substrate. One or more mandrels of the device material are disposed on the base layer. The disposing the one or more mandrels includes positioning a mask over of the base layer. The device material is deposited with the mask positioned over the base layer to form an optical device having the base layer with a base layer depth and the one or more mandrels having a first mandrel depth and a second mandrel depth.

A novel oxide semiconductor, a novel oxynitride semiconductor, a transistor including them, or a novel sputtering target is provided. A composite target includes a first region and a second region. The first region includes an insulating material and the second region includes a conductive material. The first region and the second region each include a microcrystal whose diameter is greater than or equal to 0.5 nm and less than or equal to 3 nm or a value in the neighborhood thereof. A semiconductor film is formed using the composite target.

An electrochromic device according to an embodiment includes a first transparent conductive layer, an ion storage layer, an electrolyte layer, an electrochromic layer, and a second transparent conductive layer. The electrolyte layer includes a tantalum atom. The electrochromic layer includes a tungsten atom. The ion storage layer includes an iridium atom and a tantalum atom. The ion storage layer is hydrogenated in bleached state and the electrochromic device has a transmittance of 64.1% or more in bleached state. A difference between the transmittance of the electrochromic device in bleached state and the transmittance of the electrochromic device in colored state is 8.4% or more.

The present invention relates to an electromagnetic wave transmissive metallic luster member including: a substrate; an indium oxide-containing layer provided on the substrate in a continuous state; and a metal layer formed on the indium oxide-containing layer, in which the metal layer includes, in at least a part thereof, a plurality of portions which are in a discontinuous state each other, and a sheet resistance of a laminate of the metal layer and the indium oxide-containing layer is 2.50 E + 8 Ω/□ or more.

The transparent conductive layer (3) includes a first main surface (5), and a second main surface (6) opposed to the first main surface (5) in a thickness direction. The transparent conductive layer (3) has a first grain boundary (7) in which two end edges (23) in a cross-sectional view are both opened to the first main surface (5) and an intermediate region (25) between the end edges (23) is not in contact with the second main surface (6); and a first crystal grain (31) partitioned by the first grain boundary (7) and facing only the first main surface (5). The transparent conductive layer (3) contains rare gas atoms having a higher atomic number than argon atoms.

A light-transmitting electroconductive film (20) according to the present invention includes a region containing krypton at a content ratio of less than 0.1 atomic % at least partially in a thickness direction (D) of the light-transmitting electroconductive film (20). A transparent electroconductive film (X) according to the present invention includes a transparent substrate (10); and the light-transmitting electroconductive film (20) disposed on one surface side in the thickness direction (D) of the transparent substrate.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

Various embodiments herein relate to electrochromic devices, methods of fabricating electrochromic devices, and apparatus for fabricating electrochromic devices. In a number of cases, the electrochromic device may be fabricated to include a particular counter electrode material. The counter electrode material may include a base anodically coloring material. The counter electrode material may further include one or more halogens. The counter electrode material may also include one or more additives.