Methods for monitoring process chambers using a controllable plasma oxidation process followed by a controlled reduction process and metrology are described. In some embodiments, the metrology comprises measuring the reflectivity of the metal oxide film formed by the controllable plasma oxidation process and the reduced metal film or surface modified film formed by reducing the metal oxide film.

A hydrocarbon fluid containment article having a wall with a surface that is wetted by hydrocarbon fluid. The surface includes an anti-coking coating. The anti-coking coating includes a copper salt, a silver salt, or a combination thereof. A gas turbine engine component including a wall having a first surface and an anti-coking coating on the first surface of the wall that is wetted by hydrocarbon fluid. The anti-coking coating including a copper salt, a silver salt, or a combination thereof that prevents the formation of gum or coke on a surface thereon. Methods for reducing the deposition of thermal decomposition products on a wall of an article are also provided.

The present application provides a fabric coloring method and a colored fabric, where the fabric coloring method includes: performing radiation drying on a base cloth; sequentially forming an adhesive layer and at least one color-generating layer on a surface of the base cloth after the radiation drying by vacuum deposition, where the adhesive layer contains at least one of Ti, Cr, Si and Ni, and a thickness of the adhesive layer ranges from 1 nm to 2000 nm; the color-generating layer contains at least one of Al, Ti, Cu, Fe, Mo, Zn, Ag, Au, and Mg, and the total thickness of the color-generating layer ranges from 1 nm to 4000 nm. The fabric coloring method can not only produce rich colors and make the colored fabric have good color fastness, but also reduce the sensitivity of color of the colored fabric to thickness of the film, thus improving the industrial operability.

Disclosed is a CuO/Se composite film, in which Se with low melting point (221° C.) and strong photosensitivity is introduced into CuO, providing the film with fewer defects and excellent optical, electrical and photoelectric properties. In the preparation method of the invention, Se is introduced into CuO and melted by low-temperature annealing, and then the molten Se can infiltrate CuO to eliminate or reduce defects in the CuO film such as voids and dangling bonds, thereby improving optical, electrical and photoelectric properties of the film and overcoming the shortcomings that CuO has poor crystallinity, high melting point and is decomposed at a high temperature.

The present application relates to a conductive structure body and a method for manufacturing the same. A conductive structure body according to an exemplary embodiment of the present application comprises a substrate; a metal layer provided on the substrate; and a light reflection reducing layer provided on at least one surface of the metal layer and comprising copper-manganese-nickel oxide.

An extremely thin copper foil with a carrier is provided that can keep stable releasability even after being heated for a prolonged time at a high temperature of 350 C. or more. The extremely thin copper foil with a carrier includes a carrier composed of a glass or ceramic material; an intermediate layer provided on the carrier and composed of at least one metal selected from the group consisting of Cu, Ti, Al, Nb, Zr, Cr, W, Ta, Co, Ag, Ni, In, Sn, Zn, Ga, and Mo; a release layer provided on the intermediate layer and including a carbon sublayer and a metal oxide sublayer or containing metal oxide and carbon; and an extremely thin copper layer provided on the release layer.

An interconnect and a method of making an interconnect between one or more features on a substrate comprises: sputtering a noble metal-copper eutectic thin film under controlled power on an oxide grown or deposited on a substrate; and forming an amorphous alloy structure from the noble metal-copper eutectic thin film in the shape of the interconnect and the interconnect comprising no grain or grain boundaries without temperature sensitive resistivity.

An interconnect and a method of making an interconnect between one or more features on a substrate comprises: sputtering a noble metal-copper eutectic thin film under controlled power on an oxide grown or deposited on a substrate; and forming an amorphous alloy structure from the noble metal-copper eutectic thin film in the shape of the interconnect and the interconnect comprising no grain or grain boundaries without temperature sensitive resistivity.

Apparatus for recording data and method for making the same. In accordance with some embodiments, a magnetic layer is supported by a substrate and comprises a magnetic magnetic material, a non-magnetic material, and an energy assisted segregation material. The segregation material enhances segregation of the non-magnetic material into grain boundaries within the layer at an elevated, moderate energy level.

Disclosed is a CuO/Se composite film, in which Se with low melting point (221 C.) and strong photosensitivity is introduced into CuO, providing the film with fewer defects and excellent optical, electrical and photoelectric properties. In the preparation method of the invention, Se is introduced into CuO and melted by low-temperature annealing, and then the molten Se can infiltrate CuO to eliminate or reduce defects in the CuO film such as voids and dangling bonds, thereby improving optical, electrical and photoelectric properties of the film and overcoming the shortcomings that CuO has poor crystallinity, high melting point and is decomposed at a high temperature.