An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF.sub.3, Er.sub.4Al.sub.2O.sub.9, ErAlO.sub.3, and a ceramic compound comprising Y.sub.4Al.sub.2O.sub.9 and a solid-solution of Y.sub.2O.sub.3—ZrO.sub.2.

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

Semiconductor electroacupuncture needles are disclosed, as well methods of making and using the semiconductor electroacupuncture needles. A controller for controlling the characteristics of the voltage applied to the needles and/or the current flowing through the needles is described. In some embodiments, a portion of the electro acupuncture needle is insulated to control the position below the skin at which the current enters the patient. In some embodiments, an LED on the needle lights when current above a threshold value is passing through the needle and into the patient.

A component for a processing chamber includes a ceramic body having at least one surface with a first average surface roughness. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness that is less than the first average surface roughness.

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

Semiconductor electroacupuncture needles are disclosed, as well methods of making and using the semiconductor electroacupuncture needles. A controller for controlling the characteristics of the voltage applied to the needles and/or the current flowing through the needles is described. In some embodiments, a portion of the electro acupuncture needle is insulated to control the position below the skin at which the current enters the patient. In some embodiments, an LED on the needle lights when current above a threshold value is passing through the needle and into the patient.

A thin-film piezoelectric material substrate includes an insulator on Si substrate and a thin-film laminated part. The insulator on Si substrate has a substrate for deposition made of silicon and an insulating layer formed on a surface of the substrate for deposition. The thin-film laminated part is formed on a top surface of the insulating layer. The thin-film laminated part has a YZ seed layer including yttrium and zirconium, and formed on the top surface; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film made of lead zirconate titanate, shown by general formula Pb(Zr.sub.xTi.sub.(1-x))O.sub.3, and formed on the lower electrode film; and an upper electrode film laminated on the piezoelectric material film.

Aspects of the subject disclosure may include, for example, a method in which a selection is made for a first major constituent, a second major constituent and a minor constituent for forming a desired material. The method can include mixing the first major constituent, the second major constituent and the minor constituent in a single mixing step to provide a mixture of constituents. The method can include drying the mixture of constituents to provide a dried mixture of constituents and calcining the dried mixture of constituents to provide a calcinated mixture of constituents. The method can include processing the calcinated mixture of constituents (by a process including vacuum annealing and hot-pressing) to provide a sputtering target. Other embodiments are disclosed.

A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by M.sub.dN.sub.1−dO.sub.e, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X−1.05≤d≤A1.Math.exp(−X/t1)+y0, where A1=1.68×10.sup.12, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pb.sub.a1α.sub.a2)(Zr.sub.b1Ti.sub.b2β.sub.b3)O.sub.c, where 0.5<a1/(b1+b2+b3)<1.07.

A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including, as a main component, a perovskite-type oxide containing lead and an upper electrode layer. The growth control layer includes a metal oxide represented by M.sub.dN.sub.1-dO.sub.e, where M is composed of one or more metal elements capable of substituting in the perovskite-type oxide, 0<d<1, and when the electronegativity is X, 1.41X−1.05≤d≤A1.Math.exp(−X/t1)+y0, where A1=1.68×10.sup.12, t1=0.0306, and y0=0.59958.