A device for vapor depositing metal is disclosed. The device includes a vapor-deposition chamber and a storage chamber. The storage chamber can be connected to the vapor-deposition chamber by an openable and closable isolating door. At least one storage unit configured to store at least one metal evaporation material is disposed in the storage chamber. At least one feeding unit in one-to-one correspondence with the at least one storage unit is disposed in the vapor-deposition chamber.

The present invention discloses a vacuum coating device, comprising: a crucible; an induction heater provided on the periphery of the crucible; a flow distribution box connected to the top of said crucible via a steam pipe. Wherein said flow distribution box is provided inside with a horizontal pressure stabilizing plate, said flow distribution box is connected on the top with a nozzle, said steam pipe is provided with a pressure regulating valve, and said pressure stabilizing plate has a multi-hole structure. The lower surface of said pressure stabilizing plate is connected to a horizontal flow suppression plate, and a space is formed between the side of said flow suppression plate and the inner wall of said flow distribution box. A jet moderating zone is formed between the joint where said flow distribution box and said steam pipe are connected and the lower surface of said pressure stabilizing plate, and a jet accelerating zone is formed between the upper surface of said pressure stabilizing plate and the joint where said flow distribution box and said nozzle are connected. When the high-temperature steam reaches the low-temperature steel plate, a uniform coating can be formed on the steel plate surface.

A glazing includes a glass substrate on which is deposited a coating including at least one layer, the layer being formed from a material including metal nanoparticles dispersed in an inorganic matrix of an oxide, in which the metal nanoparticles are made of a metal chosen from the group formed by silver, gold, platinum, copper and nickel or of an alloy formed from at least two of these metals, in which the matrix including an oxide of at least one element chosen from the group of titanium, silicon and zirconium and in which the atomic ratio M/Me in the material is less than 1.5, M representing all atoms of the elements of the group of titanium, silicon and zirconium present in the layer and Me representing all of the atoms of the metals of the group formed by silver, gold, platinum, copper and nickel present in the layer.

Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

An object of the present invention is to provide active material particles excellent in ion uptake ability. The silicon-based active material particles according to the present invention comprise a layer structure. Here, the “silicon-based active material particles” are, for example, active material particles for forming a negative electrode of a lithium ion secondary battery. Examples of the active material particles for forming the negative electrode of the lithium ion secondary battery include so-called Si-based active materials such as silicon (Si), silicon oxide (SiO.sub.x), metal element-containing silicon oxide containing alkaline metal elements such as lithium (Li) and alkaline earth metal elements such as magnesium (Mg), silicon alloys. The thickness of the layer in the active material particles is preferably 1 μm or less. Here, the thickness of the layer is preferably 0.01 μm or more.

A method, system, and evaporation source for reactive deposition is provided. The system includes a deposition surface operable for depositing a material onto a substrate provided on the deposition surface. The system further includes an evaporation source positioned for depositing the material onto the substrate. The evaporation source includes a crucible. The crucible includes a base and at least one sidewall extending upward from the base and defining an interior region of the crucible. The evaporation source further includes a cooling mechanism. The cooling mechanism includes a cylindrical cooling jacket surrounding an outer surface of the at least one sidewall while leaving a bottom surface of the base exposed, wherein a cooling gap is defined between the outer surface of the at least one sidewall of the crucible and an inner surface of a sidewall of the cylindrical cooling jacket.

A vaporizer body (1) having a vaporizing surface (3) for vaporizing metal in a PVD-metallization installation, wherein the vaporizing surface (3) comprises a plurality of recesses (5, 5′, 5″), with an opening of the respective recess having an area/perimeter-ratio of greater than or equal to 1.5 mm.

A canister for a semiconductor manufacturing device according to an embodiment of the present disclosure is provided with a sintered filter at the end of a dip tube into which a carrier gas is to be injected, and further provided with a porous container having excellent heat transfer rate inside a container, so that the precursor material filled inside the canister can be smoothly supplied to the thin film deposition device at a rear stage.

A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system.

A deposition system includes comprising an induction crucible apparatus configured to produce a material vapour. When in use, the induction crucible apparatus is configured to inductively heat a crucible to generate two or more thermal zones in the crucible. The deposition system further includes a substrate support configured to support a substrate and a plasma source configured to generate a plasma between the induction crucible apparatus and the substrate support such that transmission of the material vapour at least partly through the plasma generates a deposition material for deposition on the substrate.