The present invention is a laminate film comprising a plastic film, and an inorganic layer and an organic layer containing a 1,3,5-triazine derivative laid on at least one surface of the plastic film, wherein the 1,3,5-triazine derivative has a sulfur-containing group as a substituent on at least one of 2, 4 and 6 positions.

Effusion cells suitable for testing the outgassing of samples, such as flight components, during various temperatures are provided. The effusion cells include an enclosure structure including a loading door (LD) having a LD-open state and a LD-closed state, a trapdoor (TD) having a TD-open state and a TD-closed state, and an outgassing orifice. The enclosure structure defines an internal compartment when the LD is in the LD-closed state and the TD is in the TD-closed state, and wherein the outgassing orifice connects the internal compartment to an external environment, such as an interior portion of a vacuum chamber in which the effusion cell may be placed during operation.

The invention relates to an evaporation cell (1) for vacuum evaporation chamber, the evaporation cell (1) comprising a crucible (5), the crucible (5) being adapted to receive a solid or liquid material to be sublimated or evaporated, heating means (3) to heat the material in the crucible, a nozzle (6) placed at an open end of the crucible (5), the nozzle (6) comprising a frustoconical portion (61) having an opening (60) adapted for the passage of a flow of evaporated or sublimated material towards the vacuum evaporation chamber, and a cover (7) placed on the nozzle (6), the cover (7) having an opening (70) arranged about the frustoconical portion (61) of the nozzle (6). According to the invention, the cover (7) has at least one frustoconical portion (71, 72, 73) arranged about the frustoconical portion (61) of the nozzle (6), the cover (7) forming a thermal barrier between the crucible (5) and the vacuum evaporation chamber.

A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.

A deposition method that improves the direct vapor deposition process by enabling the vapor deposition from multiple evaporate sources to form new compositions of deposition layers over larger and broader substrate surface areas than heretofore could be covered by a DVD process, including providing layers with varying vapor pressures onto the substrate, as well as columnar thermal barrier over an environmental barrier and the gradual modification of the composition of the environment barrier coating and/or columnar thermal barrier coating.

The present invention provides a linear evaporation source, comprising: a heating chamber for containing a vapor deposition material, a mixing chamber located above the heating chamber and used to mix the vapor deposition material vapor, and a channel used to communicate the heating chamber and the mixing chamber, wherein one end of the mixing chamber communicates with the heating chamber through the channel, and the other end is provided with a plurality of nozzles for spraying the vapor deposition material vapor; and heaters are provided at peripheries of the heating chamber, the mixing chamber, the channel and the nozzles. The linear evaporation source of the present invention can control the thickness of the vapor deposition film to have a better uniformity, because the heating of the vapor deposition material and the mixing of the material vapor are conducted in two independent spaces.

A nozzle assembly, an evaporation plating apparatus, and a method of manufacturing an organic light emitting diode device is provided. A first heating element is arranged in the hollow cavity in the sidewall of the nozzle. When organic material is vapor deposited, the first heating element can perform heating to raise the temperature of the peripheral wall of the nozzle to be substantially the same as or slightly higher than the temperature of the evaporation plating chamber, thereby maintaining the temperature in the nozzle within a suitable range so that it is neither too low to cause the organic material to condense in the nozzle nor too high to carbonize the organic material.

A mixed layer including: a matrix material; and a dopant composition, wherein the dopant composition is doped in the matrix material, the dopant composition comprises a first dopant and a second dopant, an amount by weight of the matrix material is greater than an amount by weight of the dopant composition in the mixed layer, the matrix material, the first dopant, and the second dopant are different from each other, the matrix material does not include a transition metal, the first dopant includes a transition metal, the mixed layer is a layer formed by deposition of the matrix material, the first dopant, and the second dopant, the mixed layer has a concentration profile of the dopant composition with respect to a thickness of the mixed layer, provided that T.sub.m1>T.sub.p>T.sub.m1+2 is satisfied, wherein T.sub.m1, T.sub.p, and T.sub.m1+2 are respectively as described herein.

A deposition device according to an embodiment includes a first deposition source, a second deposition source, and a third deposition source arranged sequentially in a first direction, a first angle limitation plate disposed outside of the first deposition source, a second angle limitation plate disposed between the first deposition source and the second deposition source, a third angle limitation plate disposed between the second deposition source and the third deposition source, and a fourth angle limitation plate disposed outside the third deposition source. A deposition material of the first deposition source and a deposition material of the third deposition source include a same dopant material. A deposition material of the second deposition source includes a host material.

A filter device for reducing the amount of non-vaporous components in a vapour stream, including a carbon foam as filter material capable of being penetrated by the vapour stream and arranged in such a way that the only route for the vapour stream to pass the carbon foam is via penetration of the carbon foam. The device is in particular suitable for coating a substrate by physical vapour deposition of the vapour. The homogenous and single phase vapour stream produced by the filter device results in a smooth coated substrate wherein splashes are virtually absent.