A method for initial treatment of a target material based on a physical vapor deposition (PVD) process and a controller includes: enhancing a turn-on current on a new target material multiple times from zero to a preset current. The method for initial treatment of a target material provided by the disclosure can avoid the occurrence of electric arc causing downtime for maintenance when the new target material participates in a cavity cleaning process.

An evaporation device includes a primary chamber and two or more secondary chambers at both sides of the primary chamber. The secondary chamber is configured to supply the disposition material in a disposition process. One or more of the secondary chambers serve as an alternative disposition source. When the disposition material in one or more of the secondary chambers is nearly empty, the alternative disposition source in the other secondary chamber starts to operate.

A preparation device has a chamber, molten metal containers, a rotatable base in the chamber and having a deposition substrate, laser sets generating a dual-pulse laser, a base controller and a data collection control unit. The containers communicate with the chamber and each has a pulse pressurization apparatus pressing the molten metal into the chamber. The laser sets correspond to the containers such that beams of an emitted dual-pulse laser bombard the pulsed droplets, plasmas are generated and are sputtered and deposited on the substrate forming a multi-element alloy thin film. The unit collects base temperature and displacement information, and controls the pressurization frequency of the pulse pressurization apparatus, and the emission frequency and energy of the dual-pulse laser of the laser sets controlling the frequency and energy of the dual-pulse laser bombarding the corresponding pulsed droplets. The base controller controls the base temperature, rotation and movement.

An apparatus for direct liquid injection (DLI) of chemical precursors into a processing chamber is provided. The apparatus includes a vaporizer assembly having an injection valve for receiving a liquid reactant, vaporizing the liquid reactant, and delivering the vaporized liquid reactant. The injection valve includes a valve body encompassing an interior region therein, a gas inlet port, a liquid inlet port, and a vapor outlet port all in fluid communication with the interior region. The vaporizer assembly further includes a first inlet line having a first end fluidly coupled with the liquid inlet port and a second end to be connected to a liquid source. The vaporizer assembly further includes a second inlet line with a first end fluidly coupled with the gas inlet port, a second end fluidly coupled with a carrier gas source, and a heater positioned between the first end and the second end.

An evaporation deposition device and a method of controlling same are provided. The evaporation deposition device includes a stage configured to carry a target substrate and an evaporation deposition component disposed opposite to the stage. The evaporation deposition component includes a first housing, a first switch configured to control opening or closing of the evaporation deposition component, an evaporation deposition source positioned in the first housing, and at least one recovery tank connected to the evaporation deposition source.

A method to control the temperature of an electromagnetic pump in an apparatus wherein a liquid metal is supplied through a feed tube from a container adapted to contain a liquid metal to an evaporator device in a vacuum chamber, wherein the temperature of the electromagnetic pump is controlled by controlling one or more of the force exerted on the liquid metal in the container, the current of the electromagnetic pump, and/or the strength of the magnet field of the electromagnetic pump.

An evaporator device incudes a crucible comprising an inlet through which solid material is introduced to the crucible, and an outlet through which vaporised material is released from the crucible. Vapours outgassed from molten material within the crucible are guided away from the outlet.

An evaporator device incudes a crucible comprising an inlet through which solid material is introduced to the crucible, and an outlet through which vaporised material is released from the crucible. Vapours outgassed from molten material within the crucible are guided away from the outlet.

A deposition system and a gas storage device, the deposition system including a process chamber; and a gas supply outside of the process chamber, the gas supply being configured to provide monochlorosilane, wherein the gas supply includes a cabinet; and a gas container inside the cabinet, and the gas container includes aluminum (Al).

A vapor deposition apparatus includes a chamber configured to operate at vacuum and at least one crucible in the chamber. The crucible is configured to receive an ingot, a feeder operable to move the ingot with respect to the at least one crucible, and a heater in the chamber and configured to heat a hot zone between the at least one crucible and the feeder. A method for vapor deposition is also disclosed.