A vacuum lock for a vacuum coating plant comprises a chamber for receiving a substrate carrier, wherein the chamber comprises a first and a second inner surface. A conveyor is configured for conveying the substrate carrier. The vacuum lock comprises a flow channel assembly for evacuating and venting the chamber, the flow channel assembly being configured to cause a gas flow between both the first inner surface and a first substrate carrier surface facing the first inner surface and between the second inner surface and a second substrate carrier surface facing the second inner surface. The substrate carrier can be positioned between the first and the second inner surfaces such that a ratio of a first distance between the first inner surface and the first substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1, and a ratio of a second distance between the second inner surface and the second substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1.

A vacuum lock for a vacuum coating plant comprises a chamber for receiving a substrate carrier, wherein the chamber comprises a first and a second inner surface. A conveyor is configured for conveying the substrate carrier. The vacuum lock comprises a flow channel assembly for evacuating and venting the chamber, the flow channel assembly being configured to cause a gas flow between both the first inner surface and a first substrate carrier surface facing the first inner surface and between the second inner surface and a second substrate carrier surface facing the second inner surface. The substrate carrier can be positioned between the first and the second inner surfaces such that a ratio of a first distance between the first inner surface and the first substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1, and a ratio of a second distance between the second inner surface and the second substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1.

A deposition system includes comprising an induction crucible apparatus configured to produce a material vapour. When in use, the induction crucible apparatus is configured to inductively heat a crucible to generate two or more thermal zones in the crucible. The deposition system further includes a substrate support configured to support a substrate and a plasma source configured to generate a plasma between the induction crucible apparatus and the substrate support such that transmission of the material vapour at least partly through the plasma generates a deposition material for deposition on the substrate.

The present invention discloses a vacuum coating device, comprising: a crucible, an induction heater provided on the periphery of the crucible, a flow distribution box connected to the top of said crucible via a steam pipe, wherein said steam pipe is provided with a pressure regulating valve, said flow distribution box is provided inside with a horizontal pressure stabilizing plate, said flow distribution box is connected on the top with a nozzle, and a deflector being arranged above said nozzle along the emitting direction of the steam. Wherein a distance Da from nozzle outlet to steel plate is 10˜200 mm, a height Db of said deflector is 10˜199 mm; a distance Dc from top of said deflector to steel plate is 1˜190 mm; an angle Dd between said deflector and said nozzle outlet is 60°˜135°. The vacuum coating device in the present invention can improve the yield of the coating, and also can form a uniform coating with consistent thickness.

Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a PbS thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level PbS photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The PbS photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones. The corresponding non-uniformity in a wafer-level photosensitive surface is <5%, satisfying the requirements of preparation of a PbS Mega-pixel-level array imaging system.

Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a PbS thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level PbS photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The PbS photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones. The corresponding non-uniformity in a wafer-level photosensitive surface is <5%, satisfying the requirements of preparation of a PbS Mega-pixel-level array imaging system.

A coating includes a first base layer including a nitride of at least Al and Cr, a second base layer including a nitride of at least Al and Cr overlying the first base layer, and an outermost indicator layer overlying the second base layer. The first base layer has a positive residual compressive stress gradient. The second base layer has substantially constant residual compressive stresses. The outermost indicator layer includes a nitride of Si and Me, wherein Me is at least one of Ti, Zr, Hf, and Cr. The outermost indicator layer has residual compressive stresses that are less than the residual compressive stresses of the second base layer.

The evaporation source for use in the vacuum evaporation apparatus in vacuum evaporation of a film formation object inside a vacuum chamber has: a main cylindrical body having a crucible part to be filled with an evaporation material Em; a secondary cylindrical body protruded from such a portion of the main cylindrical body as is positioned above the evaporation material; and a heater capable of heating the evaporation material that is filled in the crucible part. The secondary cylindrical body is detachably mountable on the main cylindrical body while shifting a phase of the discharge opening. A lid body is disposed in a manner to open or close an upper-surface opening of the crucible part. In a state in which the upper-surface opening of the crucible part is blocked by the lid body in a vacuum atmosphere, the evaporation material in the crucible part is heated by the heater.

An evaporation boat comprising an evaporator body has an evaporator surface which extends along a longitudinal direction of the evaporator body from a first end face toward a second end face of the evaporator body. The evaporator body comprises at least one recess on an underside (20) opposite to the evaporator surface, so that the evaporator body has a thickness between the evaporator surface and the underside in the region of the at least one recess along its longitudinal direction which decreases from the center of the evaporator body in the longitudinal direction toward one of the end faces associated with the recess. The use of such an evaporation boat is specified as well.

A food packaging barrier film and a method for producing the same are provided. The method includes providing a base film, depositing an inorganic laminated film on a surface of the base film, and coating a barrier coating solution on the inorganic laminated film and then curing the barrier coating solution to form a barrier coating layer. The inorganic laminated film includes at least one first inorganic material deposition layer and a second inorganic material deposition layer stacked upon each other, and the at least one first inorganic material deposition layer and the second inorganic material deposition layer are formed in a same vacuum deposition process and in a vacuum condition. The at least one first inorganic material deposition layer and the second inorganic material deposition layer are respectively formed by different inorganic metal oxides in the same vacuum depositing process.