A method for preparing a p-type gallium oxide film is provided. An M.sub.xGa.sub.1-xN target material is subjected to ablating, sputtering or evaporation in a vacuum chamber via physical vapor deposition to obtain M.sub.xGa.sub.1-xN clusters, where M is selected from the group consisting of Al, Sc, In, Y and Lu, and 0<x<1. The M.sub.xGa.sub.1-xN clusters are oxidized by O.sub.2 to obtain M-N co-doped p-type gallium oxide film on a substrate. The M.sub.xGa.sub.1-xN target material is prepared from MN powder and GaN powder through ball milling, pressing and sintering. A p-type gallium oxide film prepared by the method, and its application in the manufacturing of solar-blind ultraviolet detection devices and high-power electronic devices are also provided.

A target includes a target plate and a stabilizing layer which is joined to the rear side of the target plate. The stabilizing layer was produced by high-kinetic-energy spraying of stabilizing material onto the target plate. A process for producing a target is also provided.

The present invention provides a film formation method and a film formation apparatus which can fabricate an epitaxial film with +c polarity by a sputtering method. In one embodiment of the present invention, the film formation method of epitaxially growing a semiconductor thin film with a wurtzite structure by the sputtering method on an epitaxial growth substrate heated to a predetermined temperature by a heater includes the following steps. First, the substrate is disposed on a substrate holding portion including the heater to be located at a predetermined distance away from the heater. Then, the epitaxial film of the semiconductor film with the wurtzite structure is formed on the substrate with the impedance of the substrate holding portion being adjusted.

There is a method for surface coating using a plasma coating device. The plasma coating device has a vacuum chamber; at least one sputtering source arranged in the vacuum chamber with a target of a solid material; a substrate to be coated; and at least one carrier gas source opening into the vacuum chamber. The method has the following steps: evacuating the vacuum chamber and supplying a carrier gas stream from the carrier gas source to the target such that a plasma with ions from atoms of the carrier gas is produced. The plasma ions dissolve particles out of the solid material of the target, and the dissolved particles are supplied to the surface of the substrate. The carrier gas stream is discontinuously supplied to the target of the sputtering source by modulating the gas flow of the carrier gas stream.

Methods and apparatus for controlling plasma in a process chamber leverage an RF termination filter which provides an RF path to ground. In some embodiments, an apparatus may include a DC filter configured to be electrically connected between a DC power supply and electrodes embedded in an electrostatic chuck where the DC filter is configured to block DC current from the DC power supply from flowing through the DC filter and an RF termination filter configured to be electrically connected between the DC filter and an RF ground of the process chamber where the RF termination filter is configured to adjust an impedance of the electrodes relative to the RF ground.

A method for manufacturing an acoustic wave device with an excellent frequency-temperature profile is performed such that the acoustic wave device produced includes a piezoelectric substrate, an IDT electrode located on the piezoelectric substrate, and a dielectric film mainly including Si and O and arranged on the piezoelectric substrate to cover the IDT electrode. The dielectric film is formed by sputtering in a sputtering gas containing H.sub.2O.

A method for preparing a p-type gallium oxide film is provided. An M.sub.xGa.sub.1-xN target material is subjected to ablating, sputtering or evaporation in a vacuum chamber via physical vapor deposition to obtain M.sub.xGa.sub.1-xN clusters, where M is selected from the group consisting of Al, Sc, In, Y and Lu, and 0<x<1. The M.sub.xGa.sub.1-xN clusters are oxidized by O.sub.2 to obtain M-N co-doped p-type gallium oxide film on a substrate. The M.sub.xGa.sub.1-xN target material is prepared from MN powder and GaN powder through ball milling, pressing and sintering. A p-type gallium oxide film prepared by the method, and its application in the manufacturing of solar-blind ultraviolet detection devices and high-power electronic devices are also provided.

Provided are a laminated body and a laminated body manufacturing method that can improve adhesiveness between a resin layer and a seed layer. The laminated body has a substrate, a first wiring layer, a resin layer, and a second wiring layer in this order, and the second wiring layer includes at least an adhesive layer and a seed layer in this order.

A substrate stage holding a substrate to be treated in a vacuum chamber in which a target made of tungsten is mounted and a high-frequency power source supplying a high-frequency electric power to the substrate stage are provided. When a first plasma atmosphere is generated in the vacuum chamber, and sputtered particles generated by sputtering the target are adhered and accumulated on the substrate so that a tungsten film is deposited, a second plasma atmosphere is generated by supplying the high-frequency electric power to the substrate stage, and plus ions in the first plasma atmosphere are also caused to collide with the substrate. Provided that an area of a substrate holding surface of the substrate stage functioning as one electrode and an inner-surface area of the vacuum chamber functioning as the other electrode of the second plasma atmosphere are defined as an anode area and a cathode area, respectively.

There is a method for surface coating using a plasma coating device. The plasma coating device has a vacuum chamber; at least one sputtering source arranged in the vacuum chamber with a target of a solid material; a substrate to be coated; and at least one carrier gas source opening into the vacuum chamber. The method has the following steps: evacuating the vacuum chamber and supplying a carrier gas stream from the carrier gas source to the target such that a plasma with ions from atoms of the carrier gas is produced. The plasma ions dissolve particles out of the solid material of the target, and the dissolved particles are supplied to the surface of the substrate. The carrier gas stream is discontinuously supplied to the target of the sputtering source by modulating the gas flow of the carrier gas stream.