Provided is a film formation method that includes: an etching step of etching the surface of the substrate by bringing inert gas ions into collision with the surface of the substrate, the inert gas ions generated in a chamber accommodating the substrate; an implantation step of bringing inert gas ions into collision with metal particles deposited on the surface of the substrate to thereby hit the metal particles into the surface of the substrate while bringing the inert gas ions into collision with a metal target to thereby cause the metal particles to sputter out of the metal target and depositing the metal particles on the surface of the substrate etched in the etching step; and a film formation step of forming the film on the surface of the substrate into which the metal particles have been hit in the implantation step.

A film forming apparatus includes: a processing chamber; a sputtered particle emitter; a substrate mounting unit; and a sputtered particle shielding plate that is provided between the sputtered particle emitter and the substrate mounting unit and has a passage hole that allows the sputtered particles emitted from the sputtered particle emitter to pass through and allows the sputtered particles to be obliquely incident on a substrate mounted on the substrate mounting unit.

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

[Object] A film is deposited on a substrate with high productivity and more uniform film thickness distribution.

[Solving Means] In a deposition apparatus, a substrate holder supports at least one substrate facing a first target, rotates around a first central axis, and is configured such that the substrate is rotatable around a second central axis deviated from the first central axis. A vacuum chamber houses the first target and the substrate holder. A power source supplies discharge power to the first target. A gas supply mechanism supplies a discharge gas to the vacuum chamber. Relational expressions of Ds+Dt≥H, A≥R, and H≥R are satisfied, Ds being a distance between the first central axis and the second central axis in a direction perpendicular to the first central axis, Dt being a distance between the first central axis and a center of the first target in a direction perpendicular to the first central axis, R being a radius of the first target, H being a distance between the first target and the substrate in a direction of the first central axis, A being an absolute value of a difference between Ds and Dt.

A film including: a substrate; a first barrier layer on the substrate; a first resin layer on the first barrier layer; wherein the first resin layer includes a structured major surface and a plurality of features; a second barrier layer on the structured major surface of the first resin layer; and a second resin layer on the second barrier layer, wherein the second resin layer includes a structured major surface and a plurality of features.

Methods and apparatus for plasma chamber target for reducing defects in workpiece during dielectric sputtering are provided. For example, a dielectric sputter deposition target can comprise a dielectric compound having a predefined average grain size ranging from approximately 65 μm to 500 μm, wherein the dielectric compound is at least one of magnesium oxide or aluminum oxide.

A reflective mask blank including a substrate, a multilayer reflection film consisting of at least two first layers and at least two second layers that are laminated alternatively and having different optical properties each other, and an absorber film are manufactured by a sputtering method. Each layer is formed by two stages consisting of a first stage applied from when the forming of each layer is started and until a prescribed thickness is formed, and a second stage applied from when the prescribed thickness is formed and until the forming of each layer is completed, and a sputtering pressure of the first stage is set to higher than both a sputtering pressure at which the forming of the layer formed just before is completed, and a sputtering pressure of the second stage.

A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

A system for fabricating a crystalline film is provided comprising a sputtering chamber that receives placement of a substrate, receives placement of a Tungsten target, and receives configuration of a separation distance between the substrate and the Tungsten target. The system also receives adjustment of chamber pressure, receives selection of a gas mixture ratio, and receives selection of a sputtering power profile. The chamber yields crystalline cluster-free amorphous Tungsten nitride alloy film. The chamber receives placement of the Tungsten target on a sputtering tool. The separation distance is configured to minimize adatom mobility of film produced. The chamber pressure is adjusted within a range of about 30 mTorr to about 5 mTorr, inclusive. The gas mixture ratio is a sputtering gas mixture ratio of Argon to Nitrogen. The sputtering power profile is for the sputtering tool. The power profile is 300 W of alternating current.

A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.