An optical metasurface film includes a flexible polymeric film having a first major surface, a patterned polymer layer having a first surface proximate to the first major surface of the flexible polymeric film and having a second nanostructured surface opposite the first surface, and a refractive index contrast layer including a refractive index contrast material adjacent to the nanostructured surface of the patterned polymer layer forming a nanostructured bilayer with a nano structured interface. The nanostructured bilayer comprising a plurality of nanostructures disposed on the flexible polymeric film. The nanostructured bilayer imparts a light phase shift that varies as a function of position of the nano structured bilayer on the flexible polymeric film. The light phase shift of the nanostructured bilayer defines a predetermined operative phase profile of the optical metasurface film. A light reflecting layer is in optical communication with the nano structured bilayer.

Disclosed are a high-entropy carbide ceramic material and a preparation method thereof, and also a ceramic coating and its preparation method and use. The high-entropy carbide ceramic material has a chemical composition of (ZrCrTiVNb)C and includes Zr, Cr, Ti, V, and Nb, with a same mole fraction of 6-10%.

Provided are a laminated body and a laminated body manufacturing method that can improve adhesiveness between a resin layer and a seed layer. The laminated body has a substrate, a first wiring layer, a resin layer, and a second wiring layer in this order, and the second wiring layer includes at least an adhesive layer and a seed layer in this order.

A transparent electroconductive layer 3 includes a first main surface 5 and a second main surface 6 facing each other in a thickness direction. The transparent electroconductive layer 3 is a single layer extending in a plane direction perpendicular to the thickness direction. The transparent electroconductive layer 3 has a plurality of crystal grains 4, a plurality of first grain boundaries 7 partitioning the plurality of crystal grains 4 and having each of one end edge 9 and another end edge 10 in the thickness direction open in each of the first main surface 5 and the second main surface 6, and a second grain boundary 8 branching from a first intermediate portion 11 of one first grain boundary 7A and reaching a second intermediate portion 12 of another first grain boundary 7B.

A sputtering apparatus includes: a processing container; a first target provided inside the processing container and formed of a first material; a second target provided inside the processing container and formed of a second material different from the first material; a stage provided inside the processing container to place a substrate thereon; a shielding plate arranged between the first target and the second target; and a controller, wherein the controller is configured to perform a process of reducing a film stress of a film formed on the shielding plate.

Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.

A sputtering apparatus includes a chamber configured to provide a space where a deposition process is performed on a substrate, a substrate holder configured to support the substrate within the chamber, and at least one turret-type target assembly located over the substrate, including a plurality of targets mounted thereon and adapted to operatively rotate by a predetermined angle about its longitudinal axis such that any one of the targets is off-axis aligned with respect to a film-deposited surface of the substrate.

A metal oxide thin film formed of β-MoO.sub.3 includes at least one doping element of the group Re, Mn, and Ru. Further, there is described a method of producing such a metal oxide thin film via sputtering and a thin film device with a metal oxide thin film of β-MoO.sub.3 that includes at least one doping element selected from the group Re, Mn, and Ru.

The present invention is a method for mass-production of a recording medium with the component composition thereof monotonically changing along the film thickness direction. In the method, the magnetic recording medium that includes at least a substrate, and first magnetic recording layer and second magnetic recording layer as the magnetic recording layer. The method includes: laminating a second magnetic layer of FePtRh on a first magnetic layer of FePt or FePtRh with heating. In the method, heat treatment may be preheat-treatment or postheat-treatment, when laminating the second magnetic layer of FePtRh onto the first magnetic layer of FePtRh, the concentration of Rh in the second magnetic layer is higher than that of the first magnetic layer.

A stack includes a substrate, a magnetic recording layer having a columnar structure, and an interlayer disposed between the substrate and the magnetic recording layer. The columnar structure includes magnetic grains separated by a crystalline segregant or a combination of crystalline and amorphous segregants.