Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

Disclosed are a component for a fuel injector and a method for coating the same. The component for the fuel injector may include a base material, a bonding layer laminated on the base material, a support layer laminated on the outer surface of the bonding layer, and an NbSiCN functional layer including an NbCN layer and an SiCN layer and alternately laminated on the outer surface of the support layer, thereby reducing friction, high hardness, shock resistance, heat resistance, and durability of the component for the fuel injector.

A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.

Disclosed herein are systems and methods for physical vapor deposition silicon nitride coatings. The methods thereof may include a creating a magnetically confined plasma near a surface of a silicon nitride. The plasma may cause positively charged energetic ions from the plasma to collide with negatively charged silicon nitride atoms, causing the silicon nitride atoms to be sputtered and deposited on a substrate such as titanium. The silicon nitride coating may be nitrogen-rich silicon nitride or silicon-rich silicon nitride.

Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber. The at least one mount and the at least first and second magnetron sputtering devices are arranged such that, when each substrate is moved through the germanium sputtering zone on the at least one movable mount, germanium is deposited on the said substrate, and when each substrate is moved through the carbon sputtering zone on the at least one movable mount, carbon is deposited on the said substrate.

The present invention discloses a coated cutting tool having a hard coating film on a surface of the tool. The hard coating film is a nitride, the content ratio of titanium (Ti) with respect to a total amount of metal elements (including semimetal elements) is in a range of 70 at % to 95 at %, the content ratio of silicon (Si) with respect to the total amount of metal elements (including semimetal elements) is in a range of 5 at % to 30 at %, and the content ratio of argon (Ar) with respect to the total amount of metal elements (including semimetal elements) and non-metal elements is 0.1 at % or less. The hard coating film has a NaCl type crystal structure and has an average crystal grain size in a range of 5 nm to 30 nm.

This disclosure describes systems, methods, and apparatus for reducing ripple in a pulsed waveform power generation system, often for use providing power to a plasma processing chamber. A snubber can be provided between a DC power supply and a switching circuit. A buck converter can also be provided between the snubber and the switching circuit, where the buck converter takes its input from within the snubber and in particular from between a rectifying and capacitive component of the snubber. In this way, the buck converter can be isolated from the DC power supply via an input inductor on a high-input line from the DC power supply.

A method of forming an optical device is provided. The method includes disposing an optical device substrate on a substrate support in a process volume of a process chamber, the optical device substrate having a first surface; and forming a first optical layer on the first surface of the optical device substrate during a first time period when the optical device substrate is on the substrate support, wherein the first optical layer comprises one or more metals in a metal-containing oxide, a metal-containing nitride, or a metal-containing oxynitride, and the first optical layer is formed without an RF-generated plasma over the optical device substrate; and forming a second optical layer with an RF-generated plasma over the first optical layer during a second time period when the optical device substrate is on the substrate support.

The present invention resides in the unifying idea of synchronizing a positive voltage pulse supplied to an electrically conductive or ferromagnetic tube and a exciting negative voltage pulse on a hollow cathode induced on the background of a high-frequency capacitive discharge. In one embodiment, the invention relates to a method of generating low-temperature plasma in a vacuum chamber comprising a hollow cathode and an electrode, the method comprising the step of igniting the pulsed DC discharge in the hollow cathode wherein the positive voltage pulse at least partially overlaps with the negative voltage pulse, and the positive voltage pulse at least partially overlaps with the negative voltage pulse on the hollow cathode. In another embodiment, the present invention relates to a method of coating the inner walls of hollow tubes which utilizes the above-mentioned low-temperature plasma generation process. In another embodiment, the invention relates to a low-temperature plasma generating device comprising a hollow cathode located in the vacuum chamber, a RF plasma source, a pulse DC burst source, and a bipolar pulse source. In another embodiment, an object of the invention is an apparatus adapted to coat the inner sides of hollow tubes comprising a low-temperature plasma generating device.

A method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of high power impulse magnetron sputtering (HIPIMS), wherein, to deposit the at least one TiCN layer, at least one Ti target is used as the Ti source for producing the TiCN layer, said target being sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one inert gas, preferably argon, and at least nitrogen gas as the reactive gas, wherein: the reactive atmosphere additionally contains, as a second reactive gas, a gas containing carbon, preferably CH4, used as the source of carbon to produce the TiCN layer wherein, while depositing the TiCN layer, a bipolar bias voltage is applied to the substrate to be coated, or at least one graphite target is used as the source of carbon for producing the TiCN layer, said target being used for sputtering in the coating chamber using a HIPIMS process with the reactive atmosphere having only nitrogen gas as the reactive gas, wherein the Ti targets are preferably operated by means of a first power supply device or a first power supply unit and the graphite targets are operated with pulsed power by means of a second power supply device or a second power supply unit.