Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.

Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.

A deposition apparatus includes deposition sources, a deposition chamber, a mask assembly, and a transfer unit. The mask assembly includes a support member, a shutter member, and a drive member. The support member has a first opening configured to allow the deposition materials to pass through while supporting the base substrate on which the passed-through deposition materials are deposited. The shutter member is accommodated in the support member and has a second opening smaller than the first opening. The drive member is configured to change a position of the second opening with respect to the base substrate in accordance with the movement of the mask assembly.

A deposition apparatus includes deposition sources, a deposition chamber, a mask assembly, and a transfer unit. The mask assembly includes a support member, a shutter member, and a drive member. The support member has a first opening configured to allow the deposition materials to pass through while supporting the base substrate on which the passed-through deposition materials are deposited. The shutter member is accommodated in the support member and has a second opening smaller than the first opening. The drive member is configured to change a position of the second opening with respect to the base substrate in accordance with the movement of the mask assembly.

An ophthalmic lens comprising an antireflective stack which strongly reduces reflection in the UV range and in the visible range. The antireflective stack comprises composite high index layers comprising zirconium oxide and another metal oxide.

An ophthalmic lens comprising an antireflective stack which strongly reduces reflection in the UV range and in the visible range. The antireflective stack comprises composite high index layers comprising zirconium oxide and another metal oxide.

An oxide superconducting wire, includes a laminate including a base material, an intermediate layer, and an oxide superconducting layer, the intermediate layer being laminated on a main surface of the base material, the intermediate layer being constituted of one or more layers having an orientation, the intermediate layer having one or more first non-orientation regions extending in a longitudinal direction of the base material, the oxide superconducting layer being laminated on the intermediate layer, the oxide superconducting layer having a crystal orientation controlled by the intermediate layer, the oxide superconducting layer having second non-orientation regions located on the first non-orientation regions, and a metal layer which covers at least a front surface and side surfaces of the oxide superconducting layer in the laminate.

An oxide superconducting wire, includes a laminate including a base material, an intermediate layer, and an oxide superconducting layer, the intermediate layer being laminated on a main surface of the base material, the intermediate layer being constituted of one or more layers having an orientation, the intermediate layer having one or more first non-orientation regions extending in a longitudinal direction of the base material, the oxide superconducting layer being laminated on the intermediate layer, the oxide superconducting layer having a crystal orientation controlled by the intermediate layer, the oxide superconducting layer having second non-orientation regions located on the first non-orientation regions, and a metal layer which covers at least a front surface and side surfaces of the oxide superconducting layer in the laminate.

An optical component includes an optical material which is a fluorine (F)-containing optical material doped with an F-containing species different from the F-containing optical material. A coating system for depositing the optical material onto a substrate or a bulk material of an optical component is an electron beam evaporation coating system, an ion assisted deposition coating system, or an ion beam sputtering coating system.

A method of manufacturing a plurality of through-holes in a layer of first material, for example for the manufacturing of a probe comprising a tip containing a channel. To manufacture the through-holes in a batch process, a layer of first material is deposited on a wafer comprising a plurality of pits a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits; using the second layer as a shadow mask when depositing a third layer at an angle, covering a part of the first material with said third material at the central locations, and etching the exposed parts of the first layer using the third layer as a protective layer.