A method for preparing bismuth oxide nanowire films by heating in an upside down position includes: washing a substrate, and fixing the substrate to a substrate support in a magnetron sputtering system in a position where an electrically conductive surface of the substrate faces downwards; placing a bismuth target, which is adhered to a copper backing plate, on a sputtering head in the magnetron sputtering system; performing direct current magnetron sputtering to form a bismuth film on the electrically conductive surface of the substrate; and regulating a heating temperature to maintain the bismuth film in a semi-molten state, and providing a predetermined oxygen gas concentration to form the bismuth oxide nanowire film.

A sputtering apparatus includes a base on which a substrate is mounted, an annular member disposed at an outer periphery of the base to surround a side surface and a backside of the substrate without in contact with the substrate, and an edge cover that covers an outer edge of an upper surface of the substrate mounted on the base. The annular member has a first surface facing the backside of the substrate mounted on the base with a gap, a second surface facing the side surface of the substrate mounted on the base with a gap, and a tapered surface formed at a corner portion between the first surface and the second surface.

The disclosed technology includes a water cooled planetary system comprising a planetary gearing system and a cooling assembly integrated into the planetary gearing system. The cooling assembly further comprises a stationary shaft, a main rotary union housed within the stationary shaft and a coolant tubing disposed on the main rotary union configured to deliver a coolant.

EC film stacks and different layers within the EC film stacks are disclosed. Methods of manufacturing these layers are also disclosed. In one embodiment, an EC layer comprises nanostructured EC layer. These layers may be manufactured by various methods, including, including, but not limited to glancing angle deposition, oblique angle deposition, electrophoresis, electrolyte deposition, and atomic layer deposition. The nanostructured EC layers have a high specific surface area, improved response times, and higher color efficiency.

A vacuum processing apparatus includes: a stage on which a substrate is placed; and a shutter configured to be able to move between a shielding position at which the stage is covered and a retracted position that is retracted from the shielding position, wherein the shutter arranged at the shielding position forms a processing space between the shutter and the stage, and includes: a gas supplier configured to supply a gas into the processing space; and a gas exhauster provided closer to a center side of the processing space than the gas supplier and configured to exhaust the gas from the processing space.

EC film stacks and different layers within the EC film stacks are disclosed. Methods of manufacturing these layers are also disclosed. In one embodiment, an EC layer comprises nanostructured EC layer. These layers may be manufactured by various methods, including, including, but not limited to glancing angle deposition, oblique angle deposition, electrophoresis, electrolyte deposition, and atomic layer deposition. The nanostructured EC layers have a high specific surface area, improved response times, and higher color efficiency.

Apparatus and methods for improving film uniformity in a physical vapor deposition (PVD) process are provided herein. In some embodiments, a PVD chamber includes a pedestal disposed within a processing region of the PVD chamber, the pedestal having an upper surface configured to support a substrate thereon, a first motor coupled to the pedestal, a lid assembly comprising a first target, a first magnetron disposed over a portion of the first target, and in a region of the lid assembly that is maintained at atmospheric pressure, a first actuator configured to translate the first magnetron in a first direction, a second actuator configured to translate the first magnetron in a second direction, and a system controller that is configured to cause the first magnetron to translate along at least a portion of a first path by causing the first actuator and second actuator to simultaneously translate the first magnetron.

A sputtering apparatus of the present invention is an apparatus performing deposition on a substrate to be processed using a sputtering method and includes a vacuum chamber, a target provided on a surface of a cathode provided in the vacuum chamber, a substrate holder provided in the vacuum chamber to face the target, and a swing unit that causes the substrate holder to be swingable with respect to the target. A swing region of the substrate to be processed in the substrate holder is set to be smaller than an erosion region of the target.

A brake disk or drum has at least one working surface which opposes a braking member such as a brake pad or shoe. A plurality of spaced, raised island formations are provided across the working surface, with channels extending between the island formations. Each raised island formation has an outer surface which contacts a brake pad or brake shoe during braking.

To provide a highly productive, compact, and inexpensive film deposition apparatus while ensuring the stability of the film deposition quality, the apparatus includes a rotating body configured to be rotatable and provided with a holding unit that holds an object to be transferred in an attachable and detachable manner, the holding unit being provided along an outer peripheral portion of the rotating body; and a transfer mechanism having a gripping mechanism capable of gripping and releasing the object, the transfer mechanism transferring the object held by a predetermined device to the holding unit of the rotating body and transferring another object held by the rotating body to the predetermined device.