A substrate processing apparatus, a method, and a program for controlling temperature of the substrate processing apparatus. A substrate processing apparatus comprising: a mounting table configured to hold a substrate to be processed in a vacuum processing container; a heat transfer gas container placed on a back side of the mounting table with a gap between the mounting table and the heat transfer gas container and configured to be cooled by a refrigerator; and a control device configured to control heating of the refrigerator to the vicinity of a first temperature on the basis of a temperature of a first control point provided near the refrigerator and then switching the heating control for the refrigerator on or off.

A system for treating a substrate comprising an unwinder adapted to receive and unwind a roll of substrate and a rewinder adapted to rewind the substrate from the unwinder. The system further comprising a physical vapour deposition (PVD) apparatus, a vacuum chamber in which the unwinder, PVD apparatus and rewinder are disposed; and wherein a coating drum of the PVD apparatus has a temperature of between 0° C. and 10° C., and is adapted to increase a desorption rate of the substrate.

A method of depositing a layer on a substrate includes applying a first magnetic field to a cathode target, electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply, positioning an additional cylindrical cathode target electrode around the cathode, applying a second magnetic field to the additional cylindrical cathode target electrode, electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply, generating magnetic coupling between the cathode target and an anode, providing a feed gas, and selecting a time shift between negative voltage peaks associated with AC voltage waveforms generated by the first high power pulse resonance AC power supply and the second high power pulse resonance AC power supply. An apparatus includes a vacuum chamber, cathode target magnet assembly, first high power pulse resonance AC power supply, additional electrode, additional electrode magnet assembly, second high power pulse resonance AC power supply, and feed gas.

Provided is a method for forming a ferroelectric film of a metal oxide having a fluorite-type structure at a low temperature of lower than 300° C., and a ferroelectric film obtained at a low temperature. The present invention provides a production method of a ferroelectric film comprising a crystalline metal oxide having a fluorite-type structure of an orthorhombic crystal phase, which comprises using a film sputtering method comprising sputtering a target at a substrate temperature of lower than 300° C., to deposit on the substrate a film of a metal oxide which is capable of having a fluorite-type structure of an orthorhombic crystal phase, and having a subsequent thermal history of said film of lower than 300° C.; or applying an electric field to said film after said deposition or after said thermal history of lower than 300° C. Also provided are the ferroelectric film, which is formed on an organic substrate, glass, or metal substrate, which can be used only at low temperatures, and a ferroelectric element and a ferroelectric functional element or device using the ferroelectric film.

A combustion-supporting gas line, a flammable gas line, and an inert gas line are connected to a chamber performing a heat treatment on a semiconductor wafer. Nitrogen is sent from the inert gas line to the combustion-supporting gas line before supplying flammable gas into the chamber to replace gas in the combustion-supporting gas line with nitrogen. Nitrogen is sent from the inert gas line to the flammable gas line before supplying combustion-supporting gas into the chamber to replace gas in the flammable gas line with nitrogen. Common one inert gas line is provided in the combustion-supporting gas line and the flammable gas line, thus a space for arranging components relating to gas supply can be reduced.

The present disclosure is a thin-film deposition equipment including a chamber, a stage, at least one baffle and at least one shielding component. The stage is for carrying a substrate, the baffle prevents the substrate on the stage from backside coating. The shielding component is positioned higher the baffle for shielding the baffle, to receive target atoms which is yet deposited on the substrate for the baffle. Such that to avoid the target atoms deposited on the baffle forming a thin film, and to further prevent a problem of the thin film from being heated then flowing from the baffle to a contact area between the baffle and the substrate.

A system includes multi-zone heater with heating elements within a substrate support that correspond to multiple zones of the substrate support. A processing device coupled to the heating elements and to access a temperature matrix with multiple vectors corresponding to zones; determine a temperature map of the substrate support by multiplying the temperature matrix by a weight vector, the weight vector containing estimated weight values for each respective vector; determine a target thickness map of a film on a substrate based on an original thickness map and the temperature map, the original thickness map having data characterizing an original thickness across locations of an original film at a uniform temperature; iteratively update the estimated weight values so that the temperature map results in minimization to a standard deviation of thickness values within the target thickness map; and employ the estimated weight values as control values for the heating elements.

Embodiments of the present disclosure generally relate to semiconductor processing, and specifically to methods and apparatus for surface modification of substrates. In an embodiment, a substrate modification method is provided. The method includes positioning a substrate within a processing chamber; and depositing a material on a portion of the substrate by a deposition process, wherein the deposition process comprises: thermally heating the substrate to a temperature of less than about 500° C.; delivering a first electromagnetic energy from an electromagnetic energy source to the substrate to modify a first region of the substrate, the first region of the substrate being at or near an upper surface of the substrate; and depositing a first material on the first region while delivering the first electromagnetic energy.

The present invention provides a method for in-situ etching of a wafer prior to physical vapor deposition, the method comprising the following steps. A sputtering chamber is provided, the sputtering chamber being collectively defined by a wafer handling apparatus and a magnetron. The wafer is placed into the sputtering chamber. A gas is introduced into the sputtering chamber such that the gas is separated into a plasma, wherein the plasma includes gas ions. A first negative potential is applied to the wafer using a wafer chuck of the wafer handling apparatus while a second negative potential is simultaneously applied to a sputtering target of the magnetron, wherein simultaneous application of the first negative potential to the wafer and the second negative potential to the sputtering target causes gas ions to eject material from the wafer and the sputtering target of the magnetron such that ejected material from the wafer and the sputtering target is collected onto a shield defined by the sputtering chamber.

The present disclosure provides a flexible workpiece pedestal capable of tilting a workpiece support surface. The workpiece pedestal further includes a heater mounted on the workpiece support surface. The heater includes a plurality of heating sources such as heating coils. The plurality of heating sources in the heater allows heating the workpiece at different temperatures for different zones of the workpiece. For example, the workpiece can have a central zone heated by a first heating coil, a first outer ring zone that is outside of the central zone heated by a second heating coil, a second outer ring zone that is outside of the first outer ring zone heated by a third heating coil. By using the tunable heating feature and the tilting feature of the workpiece pedestal, the present disclosure can reduce or eliminate the shadowing effect problem of the related workpiece pedestal in the art.