Techniques and mechanisms for cooling a substrate in a processing chamber by a bi-directional cooling process prior to transferring the substrate outside the processing chamber are provided. First cooling gas is introduced into the processing chamber from an upper gas source in a downward direction towards the upward facing surface of the substrate. An apparatus is placed underneath and in proximity to the substrate. Second cooling gas is introduced from the apparatus into the processing chamber in an upward direction towards the downward facing surface of the substrate. One or more gaps are cut out of the body portion of the apparatus, the gaps configured to allow the apparatus to avoid contact with the support structure holding the substrate, as the apparatus is moved in a horizontal direction into position underneath the substrate during placement of the body portion of the apparatus in proximity to the substrate.

Methods and systems for depositing a deposition material on a substrate in a space environment may include a substrate support structure on a surface of a planetary body in the space environment, a depositor for the deposition material, an energy source associated with the depositor to excite the deposition material to form a vapor of the deposition, and a moveable elongate member associated with the depositor, to move the depositor over the substrate, whereby the vapor of deposition material from the depositor may pass over the substrate and flow to the substrate to coat the substrate with the deposition material.

Provided is a vacuum processing apparatus which is capable of performing baking processing of a deposition preventive plate without impairing the function of being capable of cooling the deposition preventive plate disposed inside a vacuum chamber. The vacuum processing apparatus has a vacuum chamber for performing a predetermined vacuum processing on a to-be-processed substrate that is set in position inside the vacuum chamber. A deposition preventive plate is disposed inside the vacuum chamber. Further disposed are: a metallic-made block body vertically disposed on an inner surface of the lower wall of the vacuum chamber so as to lie opposite to a part of the deposition preventive plate with a clearance thereto; a cooling means for cooling the block body; and a heating means disposed between the part of the deposition preventive plate and the block body to heat the deposition preventive plate by heat radiation.

A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.

The present disclosure provides a carrying apparatus and a carrying method, the carrying apparatus includes: a carrying part configured to carry an object to be carried; an adhesive assembly disposed on the carrying part, a viscosity of the adhesive assembly is variable, and the carrying apparatus is configured to selectively adhere to or separate from the object to be carried according to a change of the viscosity; and a supporting part disposed on the carrying part and configured to support the object to be carried so that the object to be carried separates from the carrying part.

The present invention provides a method for depositing an ultra-thin film onto a wafer. The method comprising the following steps. A sputtering chamber is provided wherein the sputtering chamber is collectively defined by a wafer handling apparatus and a magnetron. The wafer is placed onto a wafer chuck of the wafer handling apparatus. The wafer chuck is moved to a first distance to the magnetron. A gas is introduced into the sputtering chamber such that the gas is separated into a plasma, wherein the plasma includes gas ions. A first negative potential is applied to at least one sputtering target of the magnetron while the wafer chuck with the wafer is at the first distance to the magnetron. The wafer chuck is moved to a second distance to the magnetron. A second negative potential is applied to at least one sputtering target of the magnetron while the wafer chuck with the wafer is at the second distance to the magnetron. The wafer is removed from the wafer chuck after the application of the second negative potential to at least one sputtering target of the magnetron.

The present invention provides a SiC single crystal manufacturing apparatus, including a crystal growth vessel which has a source loading portion to hold a SiC source, and a lid which is provided with a seed crystal support to hold a seed crystal; an insulating material which has at least one through-hole and covers the crystal growth vessel; a heater which is configured to heat the crystal growth vessel; and a temperature measuring instrument which is configured to measure the temperature of the crystal growth vessel through the through-hole, wherein the inner wall surface of the through-hole of the insulating material is coated with a coating material which contains a heat-resistant metal carbide or a heat-resistant metal nitride.

Disclosed is a deposition apparatus for a substrate, in particular, a deposition apparatus for both lateral portions of a substrate, in which at least one substrate is inserted in and mounted to a revolvably disposed substrate mounting drum in a direction from an outside circumferential surface toward an inside circumferential surface, one lateral portion of the substrate exposed protruding from an inside circumferential surface is subjected to deposition based on an inside source target, and the other lateral portion of the substrate exposed protruding from an outside circumferential surface is subjected to deposition based on an outside source target, thereby depositing wiring to both lateral portions of the substrate at once, and achieving a three-dimensional (3D) deposition improved in uniformity and quality.

The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.

The present invention relates to a coating apparatus for coating a substrate of a substrate material with at least one material layer of a layer material. The present invention also relates to a process chamber for a coating apparatus for coating a substrate of a substrate material with at least one material layer of a layer material. The present invention further relates to a method of coating a substrate of a substrate material with at least one material layer of a layer material in a coating apparatus. A further aspect of the invention relates to a substrate coated with at least one material layer, comprising the substrate of a substrate material that is coated with at least one material layer of a layer material.