There is provided a continuous thin film comprising a metal chalcogenide, wherein the metal is selected from the periodic groups 13 or 14 and the chalcogen is: sulphur (S), selenide (Se), or tellurium (Te), and wherein the thin film has a thickness of less than 20 nm. There is also provided a method of forming the continuous thin film. In a particular embodiment, molecular beam epitaxy (MBE) is used to grow indium selenide (In.sub.2Se.sub.3) thin film from two precursors (In.sub.2Se.sub.3 and Se) and said thin film is used to fabricate a ferroelectric resistive memory device.

A sputter deposition method includes sputtering a first target material onto a web substrate moving through a first process module while heating the substrate, providing the substrate from the first process module to a connection unit containing a roller assembly including a plurality of cylindrical rollers, bending the substrate at an angle of 10° to 40° around the roller assembly in the connection unit, providing the substrate from the connection unit to a second process module, and sputtering a second target material onto the substrate moving through the second process module while heating the substrate.

This application provides a chamber applied in a semiconductor process, including a housing. The housing is closed to form a reaction cavity. A heat conduction member is disposed on an outer side wall of the housing. The heat conduction member is provided with a first surface and a second surface opposite to each other. The first surface is in contact with the outer side wall of the housing, and the second surface is configured to be in contact with an external device to form a heat conduction channel between the housing and the external device. This application has the advantages that the heat conduction member is used to establish the heat conduction channel between the housing and the external device, so that the heat conducting rate is increased, the heat in the reaction cavity can be quickly released, and the temperature in the reaction cavity can be balanced.

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.

A coating installation for coating a spectacle lens is proposed. Preferably, the coating installation comprises a handling system for the automated handling of clamping rings for temporarily holding the spectacle lens during the application of the coating. In particular, the handling system is designed for automated transfer of spectacle lenses between different apparatuses of the coating installation. Furthermore, a clamping ring for clamping a spectacle lens at the edge, a magazine for storing clamping rings, a processing installation for processing spectacle lenses and several methods for processing and/or coating spectacle lenses are proposed.

In a manufacturing method of a glass roll, a transport device transports a glass film coupled to lead films via coupling portions. The transport device separates the lead films and/or the coupling portions from a heating roller when the lead films and/or the coupling portions pass by the heating roller.

A combustion-supporting gas line, a flammable gas line, and an inert gas line are connected to a chamber performing a heat treatment on a semiconductor wafer. Nitrogen is sent from the inert gas line to the combustion-supporting gas line before supplying flammable gas into the chamber to replace gas in the combustion-supporting gas line with nitrogen. Nitrogen is sent from the inert gas line to the flammable gas line before supplying combustion-supporting gas into the chamber to replace gas in the flammable gas line with nitrogen. Common one inert gas line is provided in the combustion-supporting gas line and the flammable gas line, thus a space for arranging components relating to gas supply can be reduced.

A stage device includes a stage having a copper main body and an electrostatic chuck, a cooling unit disposed below the stage, and a power supply mechanism for supplying power to an attraction electrode of the electrostatic chuck from a DC power supply disposed below the stage. The power supply mechanism includes a pair of terminals disposed at an outer peripheral portion of the stage while being spaced apart from each other, a first power supply line having a pair of metal rods spaced apart from each other while extending toward the stage and being connected to the DC power supply, a second power supply line having a pair of metal rods spaced apart from each other and connected to the terminals, and a connecting unit where the metal rods of the first power supply line and the metal rods of the second power supply line are connected.

Methods and systems of heating a substrate in a vacuum deposition process include a resistive heater having a resistive heating element. Radiative heat emitted from the resistive heating element has a wavelength in a mid-infrared band from 5 μm to 40 μm that corresponds to a phonon absorption band of the substrate. The substrate comprises a wide bandgap semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface. The resistive heater and the substrate are positioned in a vacuum deposition chamber. The uncoated surface of the substrate is spaced apart from and faces the resistive heater. The uncoated surface of the substrate is directly heated by absorbing the radiative heat.

A film deposition apparatus according to an embodiment is a film deposition apparatus including a depressurized processing vessel in which a film deposition chamber and a cooling chamber communicating with the film deposition chamber are provided, the film deposition chamber being configured to perform vacuum deposition on a substrate, the cooling chamber being configured to cool the substrate. The cooling chamber includes a passage through which the substrate moves, and a cooling device placed on an inner wall of the processing vessel, the cooling device including a surface-area expansion structure portion facing the passage and a refrigerant passage for refrigerant. The surface-area expansion structure portion includes a plurality of projecting portions provided to project toward the passage from the inner wall of the processing vessel. The refrigerant passage is formed along the projecting portions.