A stage device includes a stage configured to hold a target substrate in a vacuum chamber, a cold heat transfer body fixedly disposed below a bottom surface of the stage with a gap between the stage and the cold heat transfer body and cooled to an extremely low temperature by a chiller disposed below the cold heat transfer body, and cooling fluid supplied to the gap to transfer cold heat of the cold heat transfer body to the stage. The stage device further includes a stage support configured to rotatably support the stage and formed in a cylindrical shape to surround an upper part of the cold heat transfer body wherein the stage support has a vacuum insulation structure, and a rotation part configured to support the stage support and rotated by a driving mechanism while being sealed with magnetic fluid.

There is provided a method for processing a substrate, comprising: preparing a substrate processing device including a rotatable stage on which a substrate is placed, a frozen heat transfer body fixed on a backside of the stage with a gap interposed therebetween and cooled to an extremely low temperature, a gas supply mechanism configured to supply to the gap a cooling gas for transferring a cold heat of the frozen heat transfer body to the stage, a rotation mechanism configured to rotate the stage, and a processing mechanism configured to process the substrate; preheating the stage such that a temperature of the stage reaches a steady cooling temperature within a fixed range; and after preheating, continuously processing a plurality of substrates by the processing mechanism while rotating the stage that has reached the steady cooling temperature in a state where a substrate having a specific temperature higher than or equal to room temperature is placed on the stage.

The object of the technique disclosed in this specification is to prevent or reduce the occurrence of chipping of a ceramic tubular member.

A holding device is a device that includes a plate-like member, a tubular member, and a connecting member and holds an object on a holding surface of the plate-like member. The tubular member is made of ceramic and is joined to a second surface of the plate-like member at an end of the tubular member on one side in a first direction, which is perpendicular to the holding surface. The tubular member has, at an end thereof on the other side in the first direction, a flange portion having a first through-hole. The connecting member is disposed on the other side of the tubular member in the first direction and has, in a third surface, which is an end face of the connecting member on one side in the first direction, a hole into which a fastening member inserted through the first through-hole in the flange portion is to be screwed. A specific portion, which is a portion in an outer edge line of a fourth surface of the tubular member, the portion overlapping a minimum virtual circle covering the fourth surface, is not in contact with the third surface of the connecting member.

Electrostatic chucks and methods of forming electrostatic chucks are disclosed. Exemplary electrostatic chucks include a ceramic body, a device embedded within the ceramic body, and an interface layer formed overlying the device. Exemplary methods include providing ceramic precursor material within a mold, providing a device, coating the device with an interface material to form a coated device, placing the coated device on or within the ceramic precursor material, and sintering the ceramic precursor material to form the electrostatic chuck and an interface layer between the device and ceramic material formed during the step of sintering.

The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

A sputtering device includes a reaction chamber, a thimble mechanism, and a microwave heating mechanism. The reaction chamber includes a base configured to carry a workpiece. The thimble mechanism is arranged in the reaction chamber. The thimble mechanism generates a relative ascending and descending motion with the base and lifts the workpiece from the base. The microwave heating mechanism is arranged in the reaction chamber and includes a microwave transmitter and a mobile device. The mobile device is connected to the microwave transmitter and configured to move the microwave transmitter to a position under the workpiece in response to the workpiece being carried by the thimble mechanism to cause the microwave transmitter to emit microwaves to the workpiece to heat the workpiece.

A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.

A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

A design of an integrated computational element (ICE) includes specification of a substrate and a plurality of layers, their respective constitutive materials, target thicknesses and refractive indices, where refractive indices of respective materials of adjacent layers are different from each other, and a notional ICE fabricated in accordance with the ICE design is related to a characteristic of a sample. One or more layers of the plurality of layers of an ICE are formed based on the ICE design, such that the formed layer(s) includes(e) corresponding material(s) from among the specified constitutive materials of the ICE. Characteristics of probe-light interacted with the formed layer(s) are measured at two or more temperatures. Temperature dependence(ies) of one or more refractive indices of the corresponding material(s) of the formed layers is(are) determined using the measured characteristics. The received ICE design is updated based on the determined temperature dependence(ies) of the refractive index(ices).

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.