A preparation device has a chamber, molten metal containers, a rotatable base in the chamber and having a deposition substrate, laser sets generating a dual-pulse laser, a base controller and a data collection control unit. The containers communicate with the chamber and each has a pulse pressurization apparatus pressing the molten metal into the chamber. The laser sets correspond to the containers such that beams of an emitted dual-pulse laser bombard the pulsed droplets, plasmas are generated and are sputtered and deposited on the substrate forming a multi-element alloy thin film. The unit collects base temperature and displacement information, and controls the pressurization frequency of the pulse pressurization apparatus, and the emission frequency and energy of the dual-pulse laser of the laser sets controlling the frequency and energy of the dual-pulse laser bombarding the corresponding pulsed droplets. The base controller controls the base temperature, rotation and movement.

Provided is a Zn—Mg alloy plated steel material comprising: a base steel material; and first to third Zn—Mg alloy layers sequentially formed on the base steel material, wherein the first to third Zn—Mg alloy layers have a Zn single phase, a Mg single phase, a MgZn.sub.2 alloy phase, and a Mg.sub.2Zn.sub.11 alloy phase, an area rate of the MgZn.sub.2 alloy phase included in the first to third Zn—Mg alloy layers is larger than an area rate of the Mg.sub.2Zn.sub.11 alloy phase included in the first to third Zn—Mg alloy layers, and an area rate of a MgZn.sub.2 alloy phase included in each of the first to third Zn—Mg alloy layers is larger than an area rate of a MgZn.sub.2 alloy phase included in the second Zn—Mg alloy layer.

A film formation apparatus includes a rotary table provided in a processing container; a mounting table mounting a substrate and revolved by rotation of the rotary table; a film formation gas supply part configured to supply a film formation gas to a region through which the mounting table passes by the rotation of the rotary table; a spinning shaft rotatably provided on a portion rotating together with the rotary table; a driven gear provided on the spinning shaft; a driving gear configured to rotate while facing a revolution orbit of the driven gear and provided along an entire circumference of the revolution orbit so as to constitute a magnetic gear mechanism with the driven gear, and a relative-distance-changing mechanism configured to change a relative distance between the revolution orbit of the driven gear and the driving gear.

A surface geometry for an implantable medical electrode that optimizes the electrical characteristics of the electrode and enables an efficient transfer of signals from the electrode to surrounding bodily tissue. The coating is optimized to increase the double layer capacitance and to lower the after-potential polarization for signals having a pulse width in a pre-determined range by keeping the amplitude of the surface geometry with a desired range.

An apparatus for coating substrates includes a vacuum chamber having an opening through which substrates can be received and a door configured to seal the opening; one or more targets arranged in the vacuum chamber; a cooling unit configured to cool the substrates and/or a heating unit configured to heat the substrates; rotating means configured to rotate substrates relative to the one or more targets, the cooling unit and/or the heating unit; and a lifting chamber that communicates with the interior of the vacuum chamber and is configured to receive the cooling unit and the heating unit. The vacuum chamber defines a lifting axis along which the cooling unit and/or the heating unit and the lifting chamber are arranged, and the apparatus further comprises displacement means configured to displace the cooling unit and/or the heating unit along the lifting axis and between the vacuum chamber and the lifting chamber.

The present invention relates to a substrate heating apparatus. More specifically, the present invention relates to a substrate heating apparatus including a first heating element located in an inner region of the substrate heating apparatus, a second heating element located in an outer region, and a third heating element supplying current to the second heating element passing through the inner region, wherein the diameter of a wire constituting the third heating element is thicker than the diameter of a wire constituting the second heating element, thereby inhibiting the generation of an overheating region by the heating of the third heating element.

A system for controlling a temperature of a substrate during treatment in a substrate processing system comprises a substrate support including first and second components, first and second heaters, and first and second heat sinks. The first component includes an upper surface at least partially defining a center zone. The second component is arranged radially outside of and below the first component. The second component includes an upper surface at least partially defining a radially-outer zone. The first and second components are spaced apart and define a gap between them. The first and second heaters are configured to heat the first and second components, respectively. The first heat sink has one end in thermal communication with the first component. The second heat sink has one end in thermal communication with the second component.

Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

Temperature uniformity in a mounting surface of a mounting table is improved. A plasma processing apparatus includes the mounting table having thereon the mounting surface on which a work-piece serving as a plasma processing target is mounted; a coolant path formed within the mounting table along the mounting surface of the mounting table; and an inlet path connected to the coolant path from a backside of the mounting surface of the mounting table and configured to introduce a coolant into the coolant path. The inlet path is extended from the backside of the mounting surface of the mounting table such that an extension direction of the inlet path is inclined at an angle greater than 90° with respect to a flow direction of the coolant flowing through the coolant path, and then, connected to the coolant path.

A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body.