A stage device includes a stage having a copper main body and an electrostatic chuck, a cooling unit disposed below the stage, and a power supply mechanism for supplying power to an attraction electrode of the electrostatic chuck from a DC power supply disposed below the stage. The power supply mechanism includes a pair of terminals disposed at an outer peripheral portion of the stage while being spaced apart from each other, a first power supply line having a pair of metal rods spaced apart from each other while extending toward the stage and being connected to the DC power supply, a second power supply line having a pair of metal rods spaced apart from each other and connected to the terminals, and a connecting unit where the metal rods of the first power supply line and the metal rods of the second power supply line are connected.

Disclosed herein is an apparatus and method for fine tuning properties of a thin film. The method of forming a piezoelectric film includes (a) depositing a first piezoelectric film layer on a surface of a substrate by a first physical vapor deposition (PVD) process. The method includes (b) depositing a second piezoelectric film layer, on top of and in contact with the first piezoelectric film layer, by a second PVD process. A temperature of the substrate is (c) reduced after forming the first piezoelectric film layer and before forming the second piezoelectric film layer. The temperature is reduced by performing a process for a first period of time. Processes (a), (b) and (c) are additionally performed one or more times. Process (c) is performed for a second period of time. The second period of time is different than the first period of time.

The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

The present invention provides a film formation method and a film formation apparatus which can fabricate an epitaxial film with +c polarity by a sputtering method. In one embodiment of the present invention, the film formation method of epitaxially growing a semiconductor thin film with a wurtzite structure by the sputtering method on an epitaxial growth substrate heated to a predetermined temperature by a heater includes the following steps. First, the substrate is disposed on a substrate holding portion including the heater to be located at a predetermined distance away from the heater. Then, the epitaxial film of the semiconductor film with the wurtzite structure is formed on the substrate with the impedance of the substrate holding portion being adjusted.

A temperature-controlled substrate support for a substrate processing system includes a substrate support located in the processing chamber. The substrate support includes N zones and N resistive heaters, respectively, where N is an integer greater than one. A temperature sensor is located in one of the N zones. A controller is configured to calculate N resistances of the N resistive heaters during operation and to adjust power to N−1 of the N resistive heaters during operation of the substrate processing system in response to the temperature measured in the one of the N zones by the temperature sensor, the N resistances of the N resistive heaters, and N−1 resistance ratios.

Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

Provided is a vacuum processing apparatus which is capable of performing baking processing of a deposition preventive plate without impairing the function of being capable of cooling the deposition preventive plate disposed inside a vacuum chamber. The vacuum processing apparatus has a vacuum chamber for performing a predetermined vacuum processing on a to-be-processed substrate that is set in position inside the vacuum chamber. A deposition preventive plate is disposed inside the vacuum chamber. Further disposed are: a metallic-made block body vertically disposed on an inner surface of the lower wall of the vacuum chamber so as to lie opposite to a part of the deposition preventive plate with a clearance thereto; a cooling means for cooling the block body; and a heating means disposed between the part of the deposition preventive plate and the block body to heat the deposition preventive plate by heat radiation.

A substrate processing device is provided. The substrate processing device includes a processing container including a mounting table, a refrigeration device disposed to have a gap between the mounting table and the refrigeration device, a first elevating device configured to raise or lower the refrigeration device, a refrigerant flow path to supply a refrigerant to the gap, a compression device configured to compress the refrigerant supplied to the refrigerant flow path, and refrigerant transfer pipes connected to both a first connection-fixing unit which is a flow path port of the refrigerant flow path and a second connection-fixing unit fluid-communicating with the compression device. Further, each of the refrigeration transfer pipes extends such that at least a portion of the refrigerant transfer pipe is curved between the first and second connection-fixing units, and each of the refrigerant transfer pipes is placed on a support member at the second connection-fixing unit.

A substrate processing apparatus includes a processing chamber where a substrate support on which a substrate is placed and a target holder configured to hold a target are disposed, a freezing device disposed with a gap with respect to a bottom surface of the substrate support and having a chiller and a cold heat medium laminated on the chiller, and a rotating device configured to rotate the substrate support. The substrate processing apparatus further includes a first elevating device configured to raise and lower the substrate support, a coolant channel formed in the chiller to supply a coolant to the gap, and a cold heat transfer material disposed in the gap and being in contact with the substrate support and the cold heat medium so as to transfer heat therebetween.