This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

A heating device and a heating chamber are provided, comprising a base plate (21), at least three supporting columns (22) and a heating assembly, where the at least three supporting columns are arranged vertically on the base plate and are distributed at intervals along a circumferential direction of the base plate Top ends of the at least three supporting columns form a bearing surface for supporting a to-be-heated member (23). The heating assembly includes a heating light tube (24) and a thermal radiation shielding assembly, where the heating light tube is disposed above the base plate and below the bearing surface. A projection of an effective heating area formed by uniform distribution of the heating light tube on the base plate covers a projection of the bearing surface on the base plate. The thermal radiation shielding assembly shields heat radiated by the heating light tube towards surroundings and bottom.

According to an example of the present invention, a physical vapour deposition method comprises depositing a metal seed layer on a substrate, wherein the seed layer being deposited under a first temperature of between 20% and 90% of a melting temperature of the metal, and depositing more of the metal on the seed layer at a second temperature, lower than the first temperature, until a continuous single-crystalline film of the metal is complete and has a thickness of 10-2000 nanometres.

A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.

A processing arrangement comprising: a process chamber comprising an upper chamber wall, a lower chamber wall and two lateral chamber walls; an insulating structure, arranged between the processing region and each of the upper chamber wall, the lower chamber wall and the two lateral chamber walls, respectively, for thermally insulating the processing region, wherein the insulating structure is configured as gas-permeable at least in sections in such a way that a process gas from the processing region can flow out of the processing region in the direction in each of the upper chamber wall, the lower chamber wall and the two lateral chamber walls, respectively, through the insulating structure; and a gas channel, arranged between the insulating structure and each of the upper chamber wall, the lower chamber wall and the two lateral chamber walls, respectively, for pumping away the process gas which flows through the insulating structure.

A coated article includes a substrate and a coating applied over at least a portion of the substrate. The coating includes at least one metallic layer formed from one or more silver compounds doped with at least one metal selected from Groups 3 to 15 of the periodic table of the elements. Also disclosed are capsules that can absorb electromagnetic energy as well as a process of forming an antimony-doped tin oxide coating layer.

Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.

Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.

Disclosed is a deposition apparatus for a substrate, in particular, a deposition apparatus for both lateral portions of a substrate, in which at least one substrate is inserted in and mounted to a revolvably disposed substrate mounting drum in a direction from an outside circumferential surface toward an inside circumferential surface, one lateral portion of the substrate exposed protruding from an inside circumferential surface is subjected to deposition based on an inside source target, and the other lateral portion of the substrate exposed protruding from an outside circumferential surface is subjected to deposition based on an outside source target, thereby depositing wiring to both lateral portions of the substrate at once, and achieving a three-dimensional (3D) deposition improved in uniformity and quality.

A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.