Provided are a display device, a mask assembly, and an apparatus and a method for manufacturing the display device. The mask assembly includes: a mask frame; at least two mask sheets installed on the mask frame, each of the mask sheets including a plurality of openings; and at least two thin shielding plates installed on the mask frame such that the thin shielding plates are spaced apart from each other and shield a portion of the plurality of openings of each mask sheet, wherein one of the mask sheets and the thin shielding plates includes a shielding portion between the thin shielding plates spaced apart from each other, the shielding portion selectively blocking at least portions of the openings so as to form a deposition region having a shape other than a rectangle or a square.

A metallic structure includes a first plurality of metal particles arranged in an amorphous structure; a second plurality of metal particles arranged in a crystalline structure having at least two grain sizes, wherein the crystalline structure is arranged to receive the amorphous structure deposited thereon; wherein the grain size is arranged in a gradient structure.

In some examples, the disclosure describes a film including a rare-earth element-doped metal stannate exhibiting an electrical conductivity of at least about 10.sup.4 S/cm at room temperature, where the metal includes at least one of barium, strontium, calcium, or zinc.

A substrate processing system that is optimized for the production of smaller volumes of semiconductor components is disclosed. To minimize cost, the substrate processing system is designed to accommodate smaller substrates, such as substrates having a diameter of roughly one inch. Additionally, the components of the substrate processing system are designed to be interchangeable, thereby further reducing cost and complexity. In certain embodiments, the substrate processing system comprises a lower assembly, which may be used with one or more upper assemblies. The lower assembly is used to support the substrate and provide many of the fluid, electrical, and sensor connections, while the upper assemblies include the apparatus required to perform a certain fabrication function. For example, different upper assemblies may exist for deposition, etching, sputtering and ion implantation.

A wafer holding unit includes a disk-shaped ceramic substrate having a wafer mounting surface on an upper surface of the substrate, an RF electrode, for example, embedded within the substrate, a metal terminal inserted from a lower surface of the substrate, and a connecting terminal which electrically connects the RF electrode and the metal terminal with each other. The connecting terminal is constituted by a ceramic member and a metal layer. The ceramic member is made of the same material as the substrate and preferably has a truncated conical shape. The metal layer covers a surface of the ceramic member. An upper end of the metal layer is connected to the RF electrode, while a lower end of the metal layer is connected to the metal terminal with a metal member interposed therebetween.

Provided is a negative ion irradiation device in which an object is irradiated with a negative ion. The device includes a chamber that allows the negative ion to be generated therein, a gas supply unit that supplies a gas which is a raw material for the negative ion, a plasma generating portion that generates plasma, a voltage applying unit that applies a voltage to the object, a control unit that performs control of the gas supply unit, the plasma generating portion, and the voltage applying unit. The control unit controls the gas supply unit to supply the gas into the chamber, controls the plasma generating portion to generate the plasma in the chamber and to generate the negative ion by stopping the generation of the plasma, and controls the voltage applying unit to start voltage application during plasma generation and to continue voltage application after plasma generation stop.

Disclosed herein is a sliding member having an alloy overlay layer that comes into sliding contact with a counterpart member thereof and has improved fatigue resistance. The sliding member comprises a base material layer and an alloy overlay layer formed on the base material layer, in which the alloy overlay layer has a soft metal phase made of tin and precipitated in a metallic matrix phase made of aluminum, and when an average aspect ratio of the soft metal phase is defined as A, and its standard deviation is defined as A, A+A is 3.0 or less. In this case, the soft metal phase has a shape close to a sphere without elongating in a certain direction.

Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.

A heating device for evaporation, an evaporation device and an evaporation method are provided. The heating device includes: a crucible for holding an evaporation raw material; a movable heating unit which is disposed outside the crucible and can move in the direction perpendicular to a bottom surface of the crucible; and a controller configured to control the height from the movable heating unit to the bottom surface of the crucible.

Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.