Methods for making solid-state laminate electrode assemblies include methods of forming a solid electrolyte interphase (SEI) by ion implanting nitrogen and/or phosphorous into the glass surface by ion implantation.

An apparatus for controlling the temperature of a substrate is equipped with a plate-type main body having a substrate placement area, a first temperature-control device for controlling the temperature of the main body using a first temperature-control fluid, having a first plurality of separate annular channels inside the main body a second temperature-control device for controlling the temperature of the main body using a second temperature-control fluid, having a second plurality of separate annular channels inside the main body, wherein the first temperature-control fluid is supplied to the first plurality of annular channels through a first tube and removed therefrom through a second tube, wherein the second temperature-control fluid is supplied to the second plurality of annular channels through a third tube and removed therefrom through a fourth tube, wherein the main body has a first to fourth hole that communicate with the first plurality of separate annular channels and the second plurality of separate annular channels, wherein the first to fourth tubes are placed in the first to fourth holes of the main body.

A deposited amorphous carbon film includes at least 95% carbon. A percentage of sp3 carbon-carbon bonds present in the amorphous carbon film exceeds 30%, and a hydrogen content of the amorphous carbon film is less than 5%. A process of depositing amorphous carbon on a workpiece includes positioning the workpiece within a process chamber and positioning a magnetron assembly adjacent to the process chamber. The magnetron assembly projects a magnetic field into the process chamber. The method further includes providing a carbon target such that the magnetic field extends through the carbon target toward the workpiece. The method further includes providing a source gas to the process chamber, and providing pulses of DC power to a plasma formed from the source gas within the process chamber. The pulses of DC power are supplied in pulses of 40 microseconds or less, that repeat at a frequency of at least 4 kHz.

A deposition apparatus for cutting tools with a coating film capable of depositing the coating film in an appropriate temperature condition is provided. The deposition apparatus includes: a deposition chamber in which a coating film is formed on the cutting tools; a pre-treatment chamber and post-treatment chamber, each of which is connected to the deposition chamber through a vacuum valve; and a conveying line that conveys the cutting tools from the pre-treatment chamber to the post-treatment chamber going through the deposition chamber, the in-line deposition apparatus using a conveyed carrier on which rods supporting cutting tools are provided in a standing state along a conveying direction. The deposition chamber includes: a deposition region; a conveying apparatus; a heating region; and a carrier-waiting region.

The invention relates to an apparatus for immersion-based preparation of a perovskite thin film, including a sealed cavity (1). The sealed cavity (1) is internally provided with at least one semi-enclosed reactor device (2) therein, the semi-enclosed reactor device (2) includes a lower heating and sublimation device (3) and an upper heating station (4), a container (5) is provided at the top of the lower heating and sublimation device, the container (5) contains a reactant precursor, a substrate frame (6) is provided directly above the container (5), the substrate frame (6) covers an opening of the container (5), a substrate frame support platform (7) is provided at a side surface of the container (5), the substrate frame (6) is disposed on the substrate frame support platform (7), a substrate (8) to be deposited is provided at a lower bottom surface of the substrate frame (6), a surface to be deposited of the substrate (8) directly faces the reactant precursor in the container (5), and the upper heating station (4) is disposed on the substrate frame (6) to heat the substrate (8). The invention further discloses a method for preparing a perovskite solar cell by using the apparatus for immersion-based preparation of a perovskite thin film. Crystal growth of the thin film can be controlled in the preparation process, and the film formation quality, and uniformity and repeatability are improved.

A stage device for holding a substrate in a processing apparatus for processing the substrate includes a stage, a stage rotating mechanism, and a cold heat transfer mechanism. The stage is configured to hold the substrate in a processing chamber. The stage rotating mechanism includes a rotation shaft extending downward from a center of a bottom surface of the stage and a motor configured to rotate the stage via the rotation shaft. The cold heat transfer mechanism includes at least one cold heat transfer body that is fixedly disposed at a position spaced away from the rotation shaft below the stage and is configured to transfer cold heat of a chiller. The cold heat transfer mechanism is disposed with a gap between the cold heat transfer mechanism and the stage.

A movable structure includes a processing chamber configured to perform processing under a vacuum environment; a fixed portion disposed in the processing chamber; a movable portion that is movable with respect to the fixed portion; a transmission/reception module provided at the fixed portion and having a hermetically sealed structure; and a sensor module provided at the movable portion and having a hermetically sealed structure. The transmission/reception module and the sensor module perform transmission and reception of signals in a non-contact manner.

A heat exchange apparatus, heat exchange method, and vapour deposition device. The heat exchange apparatus performs cooling processing on a target object to be cooled, and has a heat exchanger, cooling water channels, water circulation channels and switchers. The cooling water channels realize heat exchange between cooling water and the heat exchanger. The water circulation channels perform temperature control on the target object to be cooled. The switchers disconnect the water circulation channels from the target object to be cooled, and realize the connection between the cooling water channels and the target object to be cooled. The heat exchange apparatus can also realize cooling with the cooling water provided by a cooling water inlet pipe when the heat exchanger fails, ensuring that the target object to be cooled, in particular a process cavity, can be subjected to effective cooling in any circumstances, to ensure normal production.

Embodiments of the present invention provide a sputtered silicon oxide electrolyte and a method for producing the same, wherein one or more of the predetermined pressure of the working gas and the power density per target unit area are controlled such that the sputtered silicon oxide electrolyte has an amorphous structure, a density of between 0.5 to 2.0 g/cm.sup.3 and a unit area capacitance of between 0.05 to 15.0 F/cm.sup.2 at 10-200 Hz.

Provided are a display device, a mask assembly, and an apparatus and a method for manufacturing the display device. The mask assembly includes: a mask frame; at least two mask sheets installed on the mask frame, each of the mask sheets including a plurality of openings; and at least two thin shielding plates installed on the mask frame such that the thin shielding plates are spaced apart from each other and shield a portion of the plurality of openings of each mask sheet, wherein one of the mask sheets and the thin shielding plates includes a shielding portion between the thin shielding plates spaced apart from each other, the shielding portion selectively blocking at least portions of the openings so as to form a deposition region having a shape other than a rectangle or a square.