A vapor deposition apparatus disclosed by an embodiment comprises: a vacuum chamber (8); a mask holder (15) for holding a deposition mask 1; a substrate holder (29) for holding a substrate for vapor deposition (2); an electromagnet (3) disposed above a surface; a vapor deposition source 5 for vaporizing or sublimating a vapor deposition material; and a heat pipe (7) including at least a heat absorption part (71) and a heat dissipation part (72), the heat absorption part being in contact with the electromagnet (3), and the heat dissipation part being derived to an outside of the vacuum chamber (8). The heat pipe (7) and the electromagnet (3) are in intimate contact with each other at an area of a contact part between the heat pipe (7) and the electromagnet (3), the area being equal to or more than a cross-sectional area within an inner perimeter of a coil (32).

Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

A deposition apparatus includes a chamber, a holding unit configured to hold a substrate in the chamber, a driving unit configured to move the holding unit holding the substrate such that the substrate passes through a deposition area in the chamber, a deposition unit configured to form a film on the substrate passing through the deposition area by supplying a deposition material to the deposition area, and a cooling unit configured to cool the holding unit.

A device for coating a band-shaped substrate within a vacuum chamber is provided. The device comprises a coating device; a cooling device with at least one convex surface area which at least partially touches the band-shaped substrate at the time of the coating; and a coil system comprising at least a supply roller, a receiving roller, and multiple guide rollers, wherein the band-shaped substrate includes an electrically conductive material at least on the side where the band-shaped substrate touches the cooling device, wherein the cooling device has an electrically conductive base body and an outer edge layer comprising an electrically insulating material; the coil system is designed to be potential-free with respect to the electrical mass of the device, and an electrical voltage of at least 10 V is formed between the electrically conductive base body, the cooling device, and the electrically conductive material of the substrate.

A semiconductor device and a method of fabricating the device are disclosed. The method of forming a metal layer includes: placing a substrate in a sputtering chamber; forming a first metal sub-layer on the substrate by performing a magnetron sputtering process; and forming a second metal sub-layer on the first metal sub-layer by performing another magnetron sputtering process and concurrently introducing a heated gas stream in the sputtering chamber, wherein the first metal sub-layer and the second metal sub-layer together constitute the metal layer and are each formed of aluminum doped with copper. The metal layer resulting from this method contains uniformly-sized small crystal grains separated from one another by minimal gaps between their grain boundaries. This imparts to the metal layer high surface flatness with fewer undesired bumps and hence good appearance, resulting in an increase in its yield.

A substrate processing device and a processing system process substrates each having a magnetic layer individually and are provided with: a support unit for supporting a substrate; a heating unit for heating the substrate supported on the support unit; a cooling unit for cooling the substrate supported on the support unit; a magnet unit for generating a magnetic field; and a processing chamber accommodating the support unit, the heating unit, and the cooling unit. The magnet unit includes a first and a second end surface which extend in parallel. The first and the second end surface are opposite to each other while being spaced apart from each other. The first end surface corresponds to a first magnetic pole of the magnet unit. The second end surface corresponds to a second magnetic pole of the magnet unit. The processing chamber is disposed between the first and the second end surface.

A substrate support in a semiconductor plasma processing apparatus, comprises multiple independently controllable thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the thermal zones. A substrate support in which the substrate support is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the substrate support include bonding together ceramic or polymer sheets having thermal zones, power supply lines, power return lines and vias.

A deposition system for depositing evaporated material on a substrate is described. The deposition system includes a vapor source having one or more vapor outlets; a shield; and a cooling device for cooling the shield, wherein the vapor source is movable to an idle position in which the one or more vapor outlets are directed toward the shield. Further, a deposition apparatus with a deposition system as well as a method of operating a deposition system are described.

A sliding member (10) including a coating film (1) composed of a hard carbon layer on a sliding surface (16) of a base material (11). The coating film has, when a cross section thereof is observed by a bright-field TEM image, a thickness within a range of 1 m to 50 m, and is configured by repeating units including black hard carbon layers (B), relatively shown in black, and white hard carbon layers (W), relatively shown in white, and laminated in a thickness direction, and comprise an inclined region, provided on a base material side, where thicknesses of white hard carbon layers (W) of the repeating units gradually increase in a thickness direction, and a homogeneous region\, provided on a surface side of the sliding member, where thicknesses of the white hard carbon layers (W) of the repeating units are the same or substantially the same in the thickness direction.