In one aspect, a system for depositing a film on a substrate is disclosed, which comprises at least one metallization source for generating metal atoms, and at least one reactive source for generating at least one reactive species. The system further includes an inner cooling cylinder and a substrate cylinder, where the inner cooling cylinder is fixedly positioned relative to the substrate cylinder, and the substrate cylinder at least partially surrounds the inner cooling cylinder. At least one mount is coupled to the substrate cylinder for mounting one or more substrates to the substrate cylinder.

A system for depositing coating on a workpiece includes a deposition chamber within which is formed a vortex to at least partially surround a workpiece therein.

A temperature controlling apparatus includes a member having a member flow path within the member, and includes a first temperature controller configured to control a temperature of a first temperature-controlled medium to a first temperature. The temperature controlling apparatus includes a second temperature controller configured to control a temperature of a second temperature-controlled medium to a second temperature, the second temperature differing from the first temperature. The temperature controlling apparatus includes a first flow path of the first temperature-controlled medium, between the member flow path and the first temperature controller. The temperature controlling apparatus includes a second flow path of the second temperature-controlled medium, between the member flow path and the second temperature controller, and includes a third flow path of the first temperature-controlled medium that flows to the first temperature controller, without using the member flow path.

A system, method, and apparatus for heating and cooling a component in chamber enclosing a chamber volume. Vacuum and purge gas ports are in fluid communication with the chamber volume. A heater apparatus selectively heats the heated apparatus to a process temperature. A vacuum valve provides selective fluid communication between a vacuum source and the vacuum port. A purge gas valve provides selective fluid communication between a purge gas source for a purge gas and the purge gas port. A controller controls the heater apparatus, vacuum and purge gas valves and to selectively flow the purge gas to the chamber volume when an equipment-safe temperature is reached. When an operator-safe temperature is reached, access to the chamber volume through an access port by an operator is permitted.

At least one layer in a coating located on a surface of a substrate is a domain structure layer constituted of two or more domains different in composition. The average value of the size of each of first domains, defined as the diameter of a virtual circumcircle in contact with each first domain, is 1 nm to 10 nm. The average value of the nearest neighbor distance of each first domain, defined as the length of the shortest straight line connecting the center of the circumcircle with the center of another circumcircle adjacent to the circumcircle, is 1 nm to 12 nm. 95% or more of the first domains has a size within 25% of the average value of the size, and 95% or more of the first domains has a nearest neighbor distance within 25% of the average value of the nearest neighbor distance.

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

The present invention relates to a coating device comprising a vacuum coating chamber for conducting vacuum coating processes, said vacuum coating chamber comprising: one or more cooled chamber walls 1 having an inner side 1 b and a cooled side 1 a, protection shields being arranged in the interior of the chamber as one or more removable shielding plates 2, which cover at least part of the surface of the inner side 1 b of the one or more cooled chamber walls 1, wherein at least one removable shielding plate 2 is placed forming a gap 8 in relation to the surface of the inner side 1 b of the cooled chamber wall 1 that is covered by said removable shielding plate 2, wherein: thermal conductive means 9 are arranged filling the gap 8 in an extension corresponding to at least a portion of the total surface of the inner side 1 b of the cooled chamber wall 1 that is covered by said removable shielding plate 2, wherein the thermal conductive means 9 enable conductive heat transfer between said removable shielding plate 2 and the respectively covered cooled chamber wall 1.

Embodiments of a process kit are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support, the deposition ring including an annular band configured to rest on a lower ledge of the substrate support, the annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, wherein a depth between an upper surface of the annular band and a horizontal portion of the upper surface of the inner lip is between about 6.0 mm and about 12.0 mm; a channel disposed radially outward of and beneath the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

This disclosure relates to apparatus and methods for sublimation and deposition of chemicals. In particular aspects, this disclosure relates to apparatus and methods for patterned sublimation and deposition of chemicals for use in matrix assisted laser desorption ionization imaging mass spectrometry (MALDI IMS). In specific aspects, the apparatus comprises a vacuum chamber and a template comprising a planar surface containing the chemical to be sublimed, where the template is located within the vacuum chamber.