A sputtering target includes: a base configured to transfer heat in a basal plane direction; and a first heat sink disposed on a sidewall of the base, the first heat sink configured to transfer heat along a direction that is different from the basal plane direction.

Embodiments of the disclosure generally relate to evaporation sources used for physical vapor deposition of material onto substrates and more particularly for controlled coating of large substrates, such as vacuum deposition of selenium on flexible substrates. In one embodiment an evaporation source for depositing a source material on a substrate is provided. The evaporation source includes a crucible having a base and a first plurality of walls surrounding an interior region of the crucible. The crucible further includes a supporting ridge extending inwardly towards the interior region. The evaporation source further includes a lid disposed on the supporting ridge, the lid including two or more adjacently positioned sheets, where each sheet includes a plurality of openings formed therethrough, and the plurality of openings in each sheet are not aligned with the plurality of openings formed in an adjacently positioned sheet.

A thin-film manufacturing method, a thin-film manufacturing apparatus, a manufacturing method for a photoelectric conversion element, a manufacturing method for a logic circuit, a manufacturing method for a light-emitting element, and a manufacturing method for a light control element with which number-of-layers control and laminating and film-forming of different kinds of materials is described. A thin-film manufacturing method according to the present technology includes bringing an electrically conductive film-forming target into contact with a first terminal and a second terminal, heating a first region that is a region of the film-forming target between the first terminal and the second terminal by applying voltage between the first terminal and the second terminal, supplying a film-forming raw material to the first region; and forming a thin film in the first region by controlling reaction time such that a thin film having a desired number of layers is formed.

A plasma processing apparatus includes a process chamber, a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck including an upper cooling channel and a lower cooling channel that are symmetrically separated from each other, and a support chuck temperature controller configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel.

A vapor deposition apparatus disclosed by an embodiment comprises: a vacuum chamber (8); a mask holder (15) for holding a deposition mask 1; a substrate holder (29) for holding a substrate for vapor deposition (2); an electromagnet (3) disposed above a surface; a vapor deposition source 5 for vaporizing or sublimating a vapor deposition material; and a heat pipe (7) including at least a heat absorption part (71) and a heat dissipation part (72), the heat absorption part being in contact with the electromagnet (3), and the heat dissipation part being derived to an outside of the vacuum chamber (8). The heat pipe (7) and the electromagnet (3) are in intimate contact with each other at an area of a contact part between the heat pipe (7) and the electromagnet (3), the area being equal to or more than a cross-sectional area within an inner perimeter of a coil (32).

In an amorphous carbon film of a sliding member, provided that a number of nitrogen atoms each singly bonded to three carbon atoms is A, and a number of nitrogen atoms each singly and doubly bonded to two carbon atoms, respectively, is B, a value A/B of the amorphous carbon film obtained through X-ray photoelectron spectroscopy analysis is 10 to 18. The method includes irradiating the surface of the substrate with nitrogen ion beams and irradiating a carbon target with electron beams, thereby forming an amorphous carbon film on the surface of the substrate while vapor-depositing a part of the carbon target onto the surface of the substrate. The output of the electron beams that irradiate the carbon target is 30 to 50 W.

Embodiments of a method and apparatus for annealing a substrate are disclosed herein. In some embodiments, a substrate anneal chamber includes a chamber body having a chamber wall and an interior volume; a lamp assembly disposed in the interior volume and having a plurality of lamps configured to heat a substrate; a slit valve disposed through a wall of the chamber body and above the lamp assembly to allow the substrate to pass into and out of the interior volume; an annular lamp assembly having at least one lamp disposed in a processing volume in an upper portion of the substrate anneal chamber above the slit valve; and a top reflector disposed above the annular lamp assembly to define an upper portion of the processing volume and to reflect radiation downwards towards the lamp assembly, wherein a bottom surface of the top reflector is exposed to the interior volume.

The present application discloses an evaporation plate for depositing a deposition material on a substrate. The evaporation plate has a first side and a second side opposite to the first side. The evaporation plate includes a main body plate; a first cooling layer on the main body plate and on the first side of the evaporation plate; and a first heating layer on a side of the first cooling layer distal to the main body plate. The first cooling layer is configured to cool the first heating layer on the first side of the evaporation plate. The first heating layer is configured to heat a material deposited on the first side of the evaporation plate.

A containment structure is disclosed for holding a substrate (e.g., preform) during CVI/CVD treatment. The containment structure includes a support structure, a cover portion, a gas inlet and a gas outlet. During the CVI/CVD process, the substrate is contained within the containment structure, forming a first space between the support structure and the substrate, and a second space between the substrate and the cover portion. Reactant gas is introduced into the first space and forced through the substrate via delta pressure, forming a binding matrix within the substrate. Excess reactant gas exits the substrate into the second space and is removed from the containment structure through the gas outlet.

The present disclosure provides a method for manufacturing a metallized film, the metallized film including: a dielectric film; a vapor-deposited metal electrode formed on a surface of the dielectric film. The vapor-deposited metal electrode includes a plurality of parts which have mutually different resistance values. The method includes a step of letting oil adhere to a region in the surface of the dielectric film on which the vapor-deposited metal electrode is to be formed and then bringing a vapor of metal into contact with the surface of the dielectric film. A quantity per unit area of the oil adhering to a part of the region on which a part of the vapor-deposited metal electrode having a relatively low resistance value is to be formed is smaller than a quantity per unit area of the oil adhering to another part of the region on which another part of the vapor-deposited metal electrode having a relatively high resistance value is to be formed.