Provided are a coating film, a manufacturing method for the same, and a PVD device that not only sufficiently improve the balance of low-friction properties and wear resistance, but also improve chipping resistance (defect resistance) and peeling resistance. This coating film coats a substrate surface, wherein a hard carbon layer is formed extending in columns-shape perpendicular to the substrate when observed in a cross-sectional bright-field TEM image, the hard carbon layer is formed using a PVD method, and the ID/IG ratio is 1-6 when the hard carbon layer is measured using Raman spectroscopy, said ratio being the ratio of the Raman spectrum D band peak area intensity and G band peak area intensity.

The present disclosure relates to vapor deposition systems and methods. In one embodiment, a drum for vapor deposition is provided. The drum includes a shell having gas slits and a cooling drum. The cooling drum includes an exterior region, an interior region, a first fluid channel partially defined by the exterior region and the interior region, and a first inlet. The first fluid channel forms a helical channel around a central axis of the cooling drum. The first inlet is in fluid communication with a first outlet by the first fluid channel.

A vacuum processing apparatus according to this invention includes a heating unit arranged to face a processing surface of a substrate supported by a substrate support unit in a vacuum chamber, a cooling unit arranged to face a reverse surface of the substrate supported by the substrate support unit, a temperature correction unit configured to correct a temperature of a periphery of the substrate in order to reduce a temperature difference between a central portion and the periphery of the substrate by being arranged in a predetermined position between the substrate and the cooling unit when the heating unit heats the substrate, and a correction unit moving device configured to retract the temperature correction unit from the predetermined position.

Provided are a vapor deposition apparatus, a vapor deposition method, and a method of manufacturing an organic EL display apparatus which can prevent heat generation of a magnet chuck by using the magnet chuck that strongly attracts a deposition mask to dispose a substrate for vapor deposition and the deposition mask in proximity to each other during vapor deposition, while being less influenced by any magnetic field during alignment between the substrate for vapor deposition and the deposition mask. In the vapor deposition apparatus, a magnet chuck (3) includes a permanent magnet (3A) and an electromagnet (3B).

In the present chiller apparatus, a refrigerant flow path is branchably attached to a lower electrode serving as a large sample table, which copes with a case where the surface area of a sample is large in a configuration in which a plasma treatment device connected to a refrigerant cycle equipped with a heating device is applied. A control device transmits a heating adjustment control signal generated based on a result of a PID arithmetic operation including proportion, integration, and differentiation on a lower electrode refrigerant pipe refrigerant detection temperature detected from a temperature sensor provided in the vicinity of a refrigerant flow path of a heat insulating portion relative to the lower electrode of a lower electrode refrigerant pipe connected to be linked to the refrigerant cycle to a heating device and performs feedback control such that the lower electrode refrigerant pipe refrigerant detection temperature becomes a setting temperature.

The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

The present disclosure provides a system (100) for aligning a dispensing apparatus (110) utilized within a semiconductor deposition chamber (102). A stationary reference apparatus (106) is disposed along the bottom of the deposition chamber. A self-alignment support system (122), comprising one or more support components (124), is intercoupled between the dispensing apparatus and a deposition system exterior component (112). The self-alignment support system is adapted to facilitate and secure repositioning of the dispensing apparatus responsive to pressure applied to the dispensing surface (114) thereof. A non-yielding offset component (126) is placed upon a first surface (108) of the stationary reference apparatus. The dispensing surface of the dispensing apparatus is engaged with the offset component, and pressure is applied to the dispensing apparatus via the offset component until a desired alignment is achieved.

An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

Apparatus for depositing a layer on a substrate in a process gas includes a chuck containing a first surface for supporting the substrate, a clamp for securing the substrate to the first surface of the chuck, an evacuatable enclosure enclosing the chuck and the clamp and control apparatus. The evacuatable enclosure includes an inlet, through which the processing gas is insertable into the enclosure. The control apparatus is adapted to move at least one of the chuck and the clamp relative to, and independently of, one another to adjust a spacing between the chuck and the clamp during a single deposition process while maintaining a flow of the processing gas and a pressure within the enclosure that is less than atmospheric pressure.

The present disclosure provides a multifunction chamber having a multifunctional shutter disk. The shutter disk includes a lamp device, a DC/RF power device, and a gas line on one surface of the shutter disk. With this configuration, simplifying the chamber type is possible as the various specific, dedicated chambers such as a degas chamber, a pre-clean chamber, a CVD/PVD chamber are not required. By using the multifunctional shutter disk, the degassing function and the pre-cleaning function are provided within a single chamber. Accordingly, a separate degas chamber and a pre-clean chamber are no longer required and the overall transfer time between chambers is reduced or eliminated.