The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

A substrate fixing carrier includes a supporting frame and a cooling plate. The supporting frame defines a hollow region and a supporting portion at an inner wall of the supporting frame. The cooling plate and the supporting frame are movable towards each other until the cooling plate is in the hollow region with edges of the cooling plate aligning with the supporting portion. When a rectangular to-be-evaporated substrate is placed in the hollow region with edges of the rectangular to-be-evaporated substrate between the supporting portion and the cooling plate, a distance between each edge of the cooling plate corresponding to each long side of the to-be-evaporated substrate and the supporting portion is greater than or equal to a thickness of the to-be-evaporated substrate, and a distance between each edge of the cooling plate corresponding to each short side of the to-be-evaporated substrate and the supporting portion is less than the thickness of the to-be-evaporated substrate.

Provided is a substrate supporting apparatus including: a mounting part provided with a first body brought into contact with a substrate so that the substrate is mounted thereon and a second body configured to surround the first body; and a support part connected under the mounting part so as to support the mounting part, wherein the first body and the second body include a plurality of protrusions, and an area of upper surfaces of the protrusions provided on the first body is formed larger than an area of upper surfaces of the protrusions provided on the second body, and thus, the substrate can be stably supported.

The disclosed embodiments include a system and method for manufacturing an integrated computational element (ICE) core. In one embodiment, the method comprises thermally evaporating a material to deposit the material on a substrate, wherein the material is deposited to establish a shape of the ICE core. The shape of the ICE core defines transmission, reflection, and absorptive electromagnetic intensity as a function of wavelength of the ICE core. In one embodiment, the method includes varying e-beam or ion-beam intensities and strengths to control the shape of the ICE core.

A method for formation of a transition metal dichalcogenide (TMDC) material layer on a substrate arranged in a process chamber of a molecular beam epitaxy tool is provided. The method includes evaporating metal from a solid metal source, forming a chalcogen-including gas-plasma, and introducing the evaporated metal and the chalcogen-including gas-plasma into the process chamber thereby forming a TMDC material layer on the substrate.

In one aspect, a system of depositing a film on a substrate is disclosed, which includes at least one metallization source for generating metal atoms, and at least one reactive source for generating at least one reactive ionic species. The system further includes a pair of inner and outer concentric cylinders, where the outer cylinder has first and second openings positioned relative to the metallization source and the reactive source to allow entry of the metal atoms and the reactive ionic species into a metallization region and a reaction region, respectively, between the two cylinders. At least one mount is coupled to the inner cylinder for mounting the substrate thereto such that said substrate is in radiative thermal communication with the inner surface of the outer cylinder, said inner cylinder being rotatable for moving the substrate between the two regions so as to expose the substrate alternatingly to said metal atoms and said reactive ionic species. Further, the outer cylinder includes at least one cooling channel through which a cooling fluid can flow for maintaining the inner surface of the outer cylinder at a temperature suitable for radiative cooling of the substrate.

The present disclosure provides a carrying apparatus and a carrying method, the carrying apparatus includes: a carrying part configured to carry an object to be carried; an adhesive assembly disposed on the carrying part, a viscosity of the adhesive assembly is variable, and the carrying apparatus is configured to selectively adhere to or separate from the object to be carried according to a change of the viscosity; and a supporting part disposed on the carrying part and configured to support the object to be carried so that the object to be carried separates from the carrying part.

Methods for depositing an EUV hardmask film on a substrate by physical vapor deposition which allow for reduced EUV dose. Certain embodiments relate to metal oxide hardmasks which require smaller amounts of EUV energy for processing and allow for higher throughput. A silicon or metal target can be sputtered onto a substrate in the presence of an oxygen and or doping gas containing plasma.

Embodiments of the present disclosure provides apparatus and method for stabilizing substrate temperature by flowing a flow of cooling gas to an inlet of cooling channels in a substrate support, receiving the flow of cooling gas from an outlet of the cooling channel using a heat exchanger, and releasing the cooling gas to an immediate environment, such as a cleanroom or a minienvironment.

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.