One or more heating assemblies for a material deposition apparatus for pre-heating a substrate before entering a material deposition area and/or for post-heating the substrate after exiting the material deposition area are described.

A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

The present invention is a method for mass-production of a recording medium with the component composition thereof monotonically changing along the film thickness direction. In the method, the magnetic recording medium that includes at least a substrate, and first magnetic recording layer and second magnetic recording layer as the magnetic recording layer. The method includes: laminating a second magnetic layer of FePtRh on a first magnetic layer of FePt or FePtRh with heating. In the method, heat treatment may be preheat-treatment or postheat-treatment, when laminating the second magnetic layer of FePtRh onto the first magnetic layer of FePtRh, the concentration of Rh in the second magnetic layer is higher than that of the first magnetic layer.

Embodiments of the present disclosure provides apparatus and method for stabilizing substrate temperature by flowing a flow of cooling gas to an inlet of cooling channels in a substrate support, receiving the flow of cooling gas from an outlet of the cooling channel using a heat exchanger, and releasing the cooling gas to an immediate environment, such as a cleanroom or a minienvironment.

A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.

The invention relates to a device for forming coatings on surfaces of a component, band-shaped material, or tool, in which at least one wire-shaped or band-shaped material (2.1 and/or 2.2) is used for forming the coating and that is/are connected to a direct electrical current source, wherein an electric arc is formed between wire-shaped materials (2.1 and 2.2) or between one wire-shaped or band-shaped material and one anode or cathode, wherein wire-shaped or band-shaped material (2.1 and/or 2.2) may be fed by means of a feed device; and melted and/or evaporated material of the wire-shaped or band-shaped material (2.1 and/or 2.2) flows, by means of a gas jet (3) of a gas or gas mixture, through an inlet into the interior of a chamber (4) that can be heated to a temperature that is at least equal to the evaporation temperature of the at least one material used for the coating or of the material with the highest evaporation temperature, and the material(s) completely evaporates and exits through at least one opening (5) present on the chamber (4) and impinges on the surface to be coated of the component or tool (6) for forming the coating.

Provided are a coating film, a manufacturing method for the same, and a PVD device that not only sufficiently improve the balance of low-friction properties and wear resistance, but also improve chipping resistance (defect resistance) and peeling resistance. This coating film coats a substrate surface, wherein a hard carbon layer is formed extending in columns-shape perpendicular to the substrate when observed in a cross-sectional bright-field TEM image, the hard carbon layer is formed using a PVD method, and the ID/IG ratio is 1-6 when the hard carbon layer is measured using Raman spectroscopy, said ratio being the ratio of the Raman spectrum D band peak area intensity and G band peak area intensity.

In a method of manufacturing a thin film transistor substrate, a first metal layer is formed on a first surface of a base substrate. The base substrate is cooled by contacting the first metal layer with a first cooling plate and by contacting a second surface of the base substrate with a second cooling plate. The first and second surfaces of the base substrate face opposite directions. A gate electrode is formed by patterning the first metal layer. A source electrode and a drain electrode are formed. The source electrode is spaced apart from the drain electrode. The source and drain electrodes partially overlap the gate electrode. A pixel electrode electrically connected to the drain electrode is formed.

A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low T.sub.g glass, a precursor of a low T.sub.g glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.

An etching chamber is equipped with an actively-cooled element preferentially adsorbs volatile compounds that are evolved from a polymeric layer of a wafer during etching, which compounds will act as contaminants if re-deposited on the wafer, for example on exposed metal contact portions where they may interfere with subsequent deposition of metal contact layers. In desirable embodiments, a getter sublimation pump is also provided in the etching chamber as a source of getter material. Methods of etching in such a chamber are also disclosed.