The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.

A system and method for fabricating perovskite films for solar cell applications are provided, the system including a housing for use as a vacuum chamber, a substrate stage coupled to the top section of the housing; a first evaporator unit coupled to the bottom section of the housing and configured to generate BX.sub.2 (metal halide material) vapor; a second evaporator unit coupled to the housing and configured to generate AX (organic material) vapor; and a flow control unit coupled to the housing for controlling circulation of the AX vapor. The dimensions of the horizontal cross-sectional shape of the first evaporator unit, the dimensions of the horizontal cross-sectional shape of the substrate stage, and the relative position in the horizontal direction between the two horizontal cross-sectional shapes are configured to maximize the overlap between the two horizontal cross-sectional shapes.

[Object] Provided are a laminate film and an electrode substrate film with excellent etching quality, in which a circuit pattern formed by etching processing is less visible under highly bright illumination, and a method of manufacturing the same.

[Solving Means] A laminate film includes a transparent substrate 60 formed of a resin film and a layered film provided on at least one surface of the transparent substrate. The layered film includes metal absorption layers 61 and 63 as a first layer and metal layers (62, 65), (64, 66) as a second layer, counted from the transparent substrate side. The metal absorption layers are formed by a reactive sputtering method which uses a metal target made of Ni alone or an alloy containing two or more elements selected from Ni, Ti, Al, V, W, Ta, Si, Cr, Ag, Mo, and Cu, and a reactive gas containing oxygen. The reactive gas contains hydrogen.

An apparatus for making substrates of a display device includes: a crucible to vaporize a deposition material and including a first metal; and a sacrificial material electrically connected to the crucible and including a second metal having a second ionization energy less than a first ionization energy of the first metal.

An article may include a substrate defining at least one at least partially obstructed surface. The substrate includes at least one of a ceramic or a ceramic matrix composite. The article also may include a multilayer, multi-microstructure environmental barrier coating on the at least partially obstructed substrate. The multilayer, multi-microstructure environmental barrier coating includes a first layer comprising a rare earth disilicate and a substantially dense microstructure; and a second layer on the first layer. The second layer includes a columnar microstructure and at least one of a rare earth monosilicate or a thermal barrier coating composition comprising a base oxide comprising zirconia or hafnia; a primary dopant comprising ytterbia; a first co-dopant comprising samaria; and a second co-dopant comprising at least one of lutetia, scandia, ceria, gadolinia, neodymia, or europia.

The present disclosure relates to an organic light emitting device, a display device, a preparation method, a storage medium and a computer equipment. The organic light emitting device includes an anode, an organic layer and a cathode, in which the organic layer includes a hole injection layer, a hole transport layer, an electron blocking layer, an organic light emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer, which are sequentially arranged in a stack on the anode, in which the hole injection layer includes a first host material and a first doping material doped in the first host material, a doping concentration of the first doping material gradually decreases in a direction away from the anode, and a doping ratio of the first doping material in the hole injection layer is less than or equal to 6%.

A processing system for forming an optical coating on a substrate is provided, wherein the optical coating including an anti-reflective coating and an oleophobic coating, the system comprising: a linear transport processing section configured for processing and transporting substrate carriers individually and one at a time in a linear direction; at least one evaporation processing system positioned in the linear transport processing system, the evaporation processing system configured to form the oleophobic coating; a batch processing section configured to transport substrate carriers in unison about an axis; at least one ion beam assisted deposition processing chamber positioned in the batch processing section, the ion beam assisted deposition processing chamber configured to deposit layer of the anti-reflective coating; a plurality of substrate carriers for mounting substrates; and, means for transferring the substrate carriers between the linear transport processing section and the batch processing section without exposing the substrate carrier to atmosphere.

A deposition device for providing a thin film on a substrate. The device comprises a material source for providing at least one first metallic element which does not re-evaporate substantially from the substrate under particular growth conditions, at least one second metallic element or metal based molecule which does re-evaporate substantially from the substrate under the same growth conditions, and a component suitable for forming an at least one first compound with the at least one first metallic element and an at least one second compound with the at least one second metallic element or metal based molecule. The device comprises a controller configured to control the growth conditions, and the amounts of the at least one first metallic element, the at least one second metallic element or metal based molecule, and the component so as to obtain a substantially stoichiometric thin film.

An evaporation apparatus comprises an evaporation chamber (2) and a moving device (3); the evaporation chamber (2) is provided with an evaporation source (21) therein and is provided with two regulating plates (22) on a side wall thereof; the moving device (3) is disposed on the bottom of the evaporation chamber (2). An evaporation method by use of the evaporation apparatus is also disclosed.

An electrode system configured to be positioned within a vacuum chamber of an electron-beam metal evaporation and deposition apparatus including a metal slug from which metal is evaporated during operation of the electron-beam metal evaporation and deposition apparatus. The electrode system includes a substantially ring-shaped electrode formed of a conductive material and a plurality of insulating standoffs configured to support the substantially ring-shaped electrode in the vacuum chamber in a position substantially surrounding the metal slug.