A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

Embodiments of process kits are provided herein. In some embodiments, a process kit, includes: a deposition ring configured to be disposed on a substrate support, the deposition ring comprising: an annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion, the step extending downward from the radially inner portion to the radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, and wherein an outer surface of the inner lip extends radially outward and downward from an upper surface of the inner lip to the upper surface of the annular band; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device. The shielding device includes a first-carry arm, a second-carry arm, a first-shield member, a second-shield member and a driver. The driver interconnects the first-carry arm and the second first-carry arm, for driving and swinging the first-shield member and the second-shield member to move in opposite directions via the first-carry arm and the second first-carry arm. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.

There is provided a configuration that includes: an intake damper and an intake fan configured to communicate with an intake port that sucks air to a transfer chamber connected to a process chamber; a valve of an inert gas introduction pipe configured to supply an inert gas to the transfer chamber; an exhaust fan and a first exhaust valve installed in the transfer chamber; a switch configured to select one of an atmospheric mode in which an atmosphere of the transfer chamber is an air atmosphere and a purge mode in which the atmosphere of the transfer chamber is an inert gas atmosphere; and a controller configured to control each of the intake damper, the intake fan, the valve of the inert gas introduction pipe, the exhaust fan, and the first exhaust valve to execute one of the atmospheric mode and the purge mode.

A sputter deposition apparatus including: a substrate support assembly arranged to support a substrate; a target support assembly arranged to support at least one sputter target for use in a sputter deposition of a target material onto the substrate; a plasma generation arrangement arranged to provide plasma for said sputter deposition; and a cartridge arranged to contain the substrate with deposited target material after said sputter deposition. The cartridge is removable from the sputter deposition apparatus.

Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.

An apparatus for contactless transportation of a device in a vacuum processing system is described. The apparatus includes: a magnetic transportation arrangement for providing a magnetic levitation force (F.sub.L) for levitating the device, the magnetic transportation arrangement comprising one or more active magnetic units; a sensor for monitoring a motion of the device, and a controller configured for controlling the one or more active magnetic units based on a signal provided by the sensor.

A carrier transport system for transporting a carrier within a vacuum chamber is described. The carrier transport system includes a track assembly extending in a transport direction, the track assembly comprising: a first passive magnetic unit provided at a first vertical coordinate and extending in the transport direction, a second passive magnetic unit provided at a second vertical coordinate and extending in the transport direction, wherein the first passive magnetic unit and the second passive magnetic unit are configured to counteract the weight of the carrier; and a roller transportation track provided at a third vertical coordinate and comprising a plurality of rollers configured to support partial weight of the carrier, wherein a first vertical distance between the first vertical coordinate and the second vertical coordinate is larger than a second distance between the second vertical coordinate and the third vertical coordinate.

The present disclosure provides a sputtering reaction chamber and a process assembly of the sputtering reaction chamber. The process assembly includes a shield, and the shield includes an integrally formed body member and a cover ring member, wherein the body member may be in a ring shape. The cover ring member may extend from a bottom of the body member to an inner side of the body member and may be configured to press an edge of a to-be-processed workpiece when a process is performed. A cooling channel may be arranged in the cover ring member and the body member and may be configured to cool the cover ring member and the body member by transferring coolant. The process assembly of the sputtering reaction chamber and the sputtering reaction chamber provided by the present disclosure can reduce heat radiation of the process assembly to the to-be-processed workpiece and released gases and impurities to effectively reduce a whisker defect and improve a product yield.