To provide a highly productive, compact, and inexpensive film deposition apparatus while ensuring the stability of the film deposition quality, the apparatus includes a rotating body configured to be rotatable and provided with a holding unit that holds an object to be transferred in an attachable and detachable manner, the holding unit being provided along an outer peripheral portion of the rotating body; and a transfer mechanism having a gripping mechanism capable of gripping and releasing the object, the transfer mechanism transferring the object held by a predetermined device to the holding unit of the rotating body and transferring another object held by the rotating body to the predetermined device.

The present invention relates to a device for processing a component, comprising: a travel carriage having a frame which defines an axis of translation along which the travel carriage is translationally movable, a bogie which is relatively rotatably connected to the frame and to which the component is attachable, a first translation-permanent magnet device which is mounted on the frame and having permanent magnets, a rotation-permanent magnet device attached to the bogie and having permanent magnets, and a carriage-side longitudinal guide means mounted on the frame, a stationary travel carriage guide device having a guide-side longitudinal guide means, a first electromagnet translation device with electromagnets which magnetically interact with the permanent magnets of the first translation-permanent magnet device, a first rotation-electromagnet device having electromagnets which magnetically interact with the permanent magnets of the rotation-permanent magnet device, and a controller connected to the first translating electromagnet device and to the first rotation-electromagnet device to control its electromagnets to control the translational movement of the travel carriage and the rotational movement of the bogie.

Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber. The at least one mount and the at least first and second magnetron sputtering devices are arranged such that, when each substrate is moved through the germanium sputtering zone on the at least one movable mount, germanium is deposited on the said substrate, and when each substrate is moved through the carbon sputtering zone on the at least one movable mount, carbon is deposited on the said substrate.

A transparent electroconductive layer 3 includes a first main surface 5 and a second main surface 6 facing each other in a thickness direction. The transparent electroconductive layer 3 is a single layer extending in a plane direction perpendicular to the thickness direction. The transparent electroconductive layer 3 has a plurality of crystal grains 4, a plurality of first grain boundaries 7 partitioning the plurality of crystal grains 4 and having each of one end edge 9 and another end edge 10 in the thickness direction open in each of the first main surface 5 and the second main surface 6, and a second grain boundary 8 branching from a first intermediate portion 11 of one first grain boundary 7A and reaching a second intermediate portion 12 of another first grain boundary 7B.

The evaporation source for use in the vacuum evaporation apparatus in vacuum evaporation of a film formation object inside a vacuum chamber has: a main cylindrical body having a crucible part to be filled with an evaporation material Em; a secondary cylindrical body protruded from such a portion of the main cylindrical body as is positioned above the evaporation material; and a heater capable of heating the evaporation material that is filled in the crucible part. The secondary cylindrical body is detachably mountable on the main cylindrical body while shifting a phase of the discharge opening. A lid body is disposed in a manner to open or close an upper-surface opening of the crucible part. In a state in which the upper-surface opening of the crucible part is blocked by the lid body in a vacuum atmosphere, the evaporation material in the crucible part is heated by the heater.

There is provided a substrate processing system comprising: a plurality of transfer modules having transfer mechanisms configured to transfer substrates; and a plurality of process modules connected to the plurality of transfer modules. The transfer mechanisms of the plurality of transfer modules transfer a plurality of substrates sequentially and serially to the plurality of process modules, and each of the plurality of transfer modules has an aligner configured to align a substrate when transferring the substrate to the process module connected to a relevant transfer module.

[Problem]

To provide a laminate body in which a resin base member and a metal deposition film are brought into firmly close contact with each other.

[Solution]

The laminate body manufacturing method includes a desorption step S10, an introduction step S20, a deposition step S30, and a coating step S40. In the desorption step S10, a hydrophobic surface of resin is irradiated with plasma to desorb at least some of the atoms constituting the resin from the surface. In the introduction step S20, the surface of the resin subjected to the desorption step S10 is irradiated with hydroxyl radicals to introduce a hydroxyl group onto the surface of the resin. In the deposition step S30, a metal film is deposited on the surface of the resin subjected to the introduction step S20. In the coating step S40, the surface of the metal film is coated with a metal layer formed of the same metal as the metal forming the metal film.

According to one embodiment, a film formation apparatus that suppresses effects of pre-processing and enables stable film formation is provided. A film formation apparatus of the present disclosure includes a chamber that can be made vacuum, a transporter that is provided inside the chamber and that circulates and transports a workpiece in a trajectory of a circle, a film formation unit that forms film by sputtering on the workpiece circulated and transported by the transporter, a load-lock room that loads the workpiece into and out of the chamber relative to air space while keeping an interior of the chamber vacuum, and a pre-processing unit that is provided in the chamber at a position adjacent to the load-lock room and that performs pre-processing to the workpiece loaded in from the load-lock room in a state distant from the transporter.

Various embodiments herein relate to electrochromic devices and electrochromic device precursors, as well as methods and apparatus for fabricating such electrochromic devices and electrochromic device precursors. In certain embodiments, the electrochromic device or precursor may include one or more particular materials such as a particular electrochromic material and/or a particular counter electrode material. In various implementations, the electrochromic material includes tungsten titanium molybdenum oxide. In these or other implementation, the counter electrode material may include nickel tungsten oxide, nickel tungsten tantalum oxide, nickel tungsten niobium oxide, nickel tungsten tin oxide, or another material.

A method for depositing a large-area graphene layer and an apparatus for continuous graphene deposition using the same are disclosed. The method can include forming a titanium (Ti) layer on a substrate by sputtering, reducing the titanium layer by spraying a reductant gas containing a hydrogen gas (H.sub.2) and a purge gas onto the titanium layer while moving in a first direction in relation to the substrate and exhausting the reductant gas and the purge gas. The method can also include forming graphene by spraying a reactant gas containing a graphene source and the purge gas onto the titanium layer while moving in a second direction opposite the first direction in relation to the substrate and exhausting the reactant gas and the purge gas.