C23C14/5833

Method of manufacturing a plurality of through-holes in a layer of first material
09975761 · 2018-05-22 · ·

A method of manufacturing a plurality of through-holes in a layer of first material, for example for the manufacturing of a probe comprising a tip containing a channel. To manufacture the through-holes in a batch process, a layer of first material is deposited on a wafer comprising a plurality of pits a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits; using the second layer as a shadow mask when depositing a third layer at an angle, covering a part of the first material with said third material at the central locations, and etching the exposed parts of the first layer using the third layer as a protective layer.

MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME
20180137889 · 2018-05-17 ·

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.

Method for forming coating layer having plasma resistance
12139785 · 2024-11-12 ·

The present invention relates to a method of forming a coating layer having plasma resistance, the method comprising steps of: preparing a substrate by placing the substrate in a substrate fixing device inside a process chamber; evaporating a Y.sub.2O.sub.3 deposition material provided in a solid form in an electron beam source by irradiating an electron beam on the Y.sub.2O.sub.3 deposition material; generating radical particles having activation energy by injecting a process gas containing oxygen for forming radicals into a RF energy beam source; irradiating an RF energy beam including the radical particles generated in the RF energy beam source, toward the substrate; depositing a thin film in which the evaporated deposition material is deposited on the substrate by being assisted by the RF energy beam, and densifying the thin film in which the deposition material deposited on the substrate forms a densified film by ion bombardment of the RF energy beam.

Multiple layer FePt structure

One embodiment described herein is directed to a method involving depositing a seed layer on a substrate, the seed layer comprising A1 phase FePt with a ratio of Pt of Fe greater than 1:1. A main layer is deposited on the seed layer, the main layer comprising A1 phase FePt with a ratio of Pt to Fe of approximately 1:1. A cap layer is deposited on the main layer, the cap layer comprising A1 phase FePt with a ratio of Pt to Fe of less than 1:1. The seed, main and cap layers are annealed to convert the A1 phase FePt to L1.sub.0 phase FePt having a graded FePt structure of varying stoichimetry from approximately Fe.sub.50Pt.sub.50 adjacent a lower portion of the structure proximate the substrate to Fe.sub.>50Pt.sub.<50 adjacent an upper portion of the structure opposite the lower portion.

Ultraviolet radiation and atomic oxygen barrier films and methods of making and using the same

Barrier films including a (co)polymeric substrate, at least one dyad on the substrate, each dyad made of a (co)polymer layer and an oxide layer overlaying the (co)polymer layer, and an outer (co)polymer layer overlaying the dyads. Optionally, at least one outer oxide layer overlays the outer (co)polymer layer. The barrier films transmit visible light and transmits, at an incident light angle of at least one of 0, 30, 45, 60, or 75, at most 70 percent of incident ultraviolet light at a wavelength range from at least 100 nanometers to 400 nanometers or in a wavelength range from at least 100 nm to 350 nm. The barrier films exhibit atomic oxygen degradation of less than 110.sup.20 mg/atom. The barrier films may be applied to decorative objects or electronic devices, (e.g., light receiving or emitting devices, in a satellite or aircraft. Methods of making the barrier films also are disclosed.

SPECTACLE LENS, METHOD OF MANUFACTURING THE SAME, AND SPECTACLES
20180017716 · 2018-01-18 · ·

Provided are a spectacle lens having a tin oxide layer on a lens base material, wherein the tin oxide layer has a composition gradient in which an oxygen content rate as anatomic percentage increases from the lens base material side to the other side, and spectacles provided with the spectacle lens.

Materials for near field transducers and near field transducers containing same

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.

Method for Long-Term Storage of Information and Storage Medium Therefor
20240416458 · 2024-12-19 ·

The present invention relates to an information storage medium and a method for long-term storage of information comprising the steps of: providing a ceramic substrate; coating the ceramic substrate with a layer of a second material different from the material of the ceramic substrate, the layer having a thickness no greater than 10 m; tempering the coated ceramic substrate to form a writable plate or disc; encoding information on the writable plate or disc by using a laser and/or a focused particle beam to manipulate localized areas of the writable plate or disc.

THERMAL EVAPORATION PROCESS FOR MANUFACTURE OF SOLID STATE BATTERY DEVICES

A method for manufacturing a solid-state battery device. The method can include providing a substrate within a process region of an apparatus. A cathode source and an anode source can be subjected to one or more energy sources to transfer thermal energy into a portion of the source materials to evaporate into a vapor phase. An ionic species from an ion source can be introduced and a thickness of solid-state battery materials can be formed overlying the surface region by interacting the gaseous species derived from the plurality of electrons and the ionic species. During formation of the thickness of the solid-state battery materials, the surface region can be maintained in a vacuum environment from about 10.sup.6 to 10.sup.4 Torr. Active materials comprising cathode, electrolyte, and anode with non-reactive species can be deposited for the formation of modified modulus layers, such a void or voided porous like materials.

Manufacturing method for a head slider coated with DLC

A manufacturing method for a head slider coated with Diamond-like Carbon (DLC) includes: providing a substrate that is to be finally made into a head slider; depositing a DLC layer on a surface of the substrate, with carbon plasma source being sputtered in a direction that is vertical to the surface of the substrate; and doping a fluorine-doping (F-doping) layer on the DLC layer. Whereby the head slider has good film adhesion performance, higher hardness, better wear resistance, lower surface energy to obtain good hydrophobicity and oleophobicity, and lower fly height in HDD.