Disclosed is a method for improving the high-temperature stability of a component, in particular a blade of a turbomachine, formed at least partially from a molybdenum alloy that, besides molybdenum, silicon, boron and titanium, comprises iron and/or yttrium. The method comprises depositing a diffusion barrier layer formed from technically pure molybdenum or tungsten or being an alloy based on molybdenum and/or tungsten at least on an outer surface, which comprises the molybdenum alloy, of the component, and depositing silicon on the diffusion barrier layer to form molybdenum silicides and/or tungsten silicides.

A method of manufacture of an extreme ultraviolet reflective element includes: providing a substrate; forming a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer and a second reflective layer for forming a Bragg reflector; and forming a capping layer on and over the multilayer stack, the capping layer formed from titanium oxide, ruthenium oxide, niobium oxide, ruthenium tungsten, ruthenium molybdenum, or ruthenium niobium, and the capping layer for protecting the multilayer stack by reducing oxidation and mechanical erosion.

Fabrics made for apparel, tents, sleeping bags and the like, in various composites, constructed such that a combination of substrate layers and insulation layers is configured to provide improved thermal insulation. The fabric composites are constructed to form a radiant barrier against heat loss via radiation and via conduction from a body.

According to one example, preparing a substrate for an electronic device can include forming a deposition layer on a magnesium alloy substrate, anodizing the magnesium alloy substrate, and forming an electrophoretic deposition layer on the anodized magnesium alloy substrate.

Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate in an integrated tool comprising a physical vapor deposition chamber and a thermal atomic layer deposition chamber comprises depositing, in the physical vapor deposition chamber, a bottom layer of titanium nitride on the substrate to a thickness of about 10 nm to about 80 nm, transferring, without vacuum break, the substrate from the physical vapor deposition chamber to the thermal atomic layer deposition chamber for depositing a nanolaminate layer of high-k material atop the bottom layer of titanium nitride to a thickness of about 2 nm to about 10 nm, and transferring, without vacuum break, the substrate from the thermal atomic layer deposition chamber to the physical vapor deposition chamber for depositing a top layer of titanium nitride atop the nanolaminate layer of high-k material to a thickness of about 10 nm to about 80 nm.

An article may include a substrate, a diffusion barrier layer formed on the substrate, and a protective layer formed on the diffusion barrier coating. The diffusion barrier layer may include iridium.

This disclosure provides systems, methods, and apparatus for tempering or chemically strengthening glass substrates having electrochromic devices fabricated thereon. In one aspect, an electrochromic device is fabricated on a glass substrate. The glass substrate is then tempered or chemically strengthened. The disclosed methods may reduce or prevent potential issues that the electrochromic device may experience during the tempering or the chemical strengthening processes, including the loss of charge carrying ions from the device, redistribution of charge carrying ions in the device, modification of the morphology of materials included in the device, modification of the oxidation state of materials included in the device, and the formation of an interfacial region between the electrochromic layer and the counter electrode layer of the device that impacts the performance of the device.

A semiconductor device with high reliability is provided. A first step of forming a metal oxide containing indium over a substrate and a second step of performing microwave treatment from above the metal oxide are included. The first step is performed by a sputtering method using an oxide target containing indium. The second step is performed using a gas containing oxygen under reduced pressure, and by the second step, a defect in which hydrogen has entered an oxygen vacancy (VoH) in the metal oxide is divided into an oxygen vacancy (Vo) and hydrogen (H).

Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a Pbs thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level Pbs photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The Pbs photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones. The corresponding non-uniformity in a wafer-level photosensitive surface is <5%, satisfying the requirements of preparation of a Pbs Mega-pixel-level array imaging system.

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio I.sub.m/I.sub.c of a maximum intensity I.sub.m of a peak attributed to monoclinic yttrium oxide to a maximum intensity I.sub.c of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤I.sub.m/I.sub.c≤0.002.