A film deposition apparatus includes a vacuum chamber, a rotary table in the vacuum chamber, and configured to mount multiple substrates along a circumferential direction, a first processing region, a separation region, and a second processing region provided in this order from an upstream side to a downstream side in a rotation direction of the rotary table. A separation gas supply and a third exhaust port are provided in the separation region. The separation gas supply supplies a separation gas to separate a first process gas supplied to the first processing region and a second process gas supplied to the second processing region. The third exhaust port exhausts the separation gas supplied to the separation region. The separation gas supply includes first and second discharge ports provided such that the third exhaust port is between the first and second discharge ports in the circumferential direction of the rotary table.

A film formation apparatus includes: a chamber which an interior thereof can be made vacuum; a rotary table provided inside the chamber, holding a workpiece, and circulating and transporting the workpiece in a circular trajectory; a film formation unit including a target formed of film formation material and a plasma generator which turns sputtering gas introduced between the target and the rotary table into plasma, the film formation unit depositing by sputtering film formation material on the workpiece; a film processing unit processing the film deposited by the film formation unit on the workpiece; holding regions each holding the workpiece and provided in a circular film formation region facing the film formation unit and the film processing unit that is a region other than the rotation axis in the rotary table; and a heater provided in the holding regions.

A method of manufacturing high capacitance anode and cathode films of capacitors is revealed. Perform sputter deposition on a cathode aluminum foil in a vacuum chamber to form a cathode metal layer which is a first titanium layer on a surface of the cathode aluminum foil. Then titanium continuously reacts with nitrogen to form cathode columnar crystal deposition on a surface of the cathode metal layer and produce a cathode film. Perform sputter deposition on an anode aluminum foil in a vacuum chamber to form an anode metal layer which is a second titanium layer on a surface of the anode aluminum foil. Then titanium continuously reacts with oxygen and nitrogen to form anode columnar crystal deposition on a surface of the anode metal layer and produce an anode film. Next use the cathode and anode films with high capacitance to form cathode and anode electrodes of the capacitor.

A film forming apparatus comprising: a processing container for accommodating a plurality of substrates, a substrate holder provided in the processing container and configured to hold the substrates such that the plurality of substrates are arranged along a circumferential direction; a rotating and revolving mechanism configured to rotate the plurality of substrates on the substrate holder and revolve the plurality of substrates on the substrate holder along the circumferential direction; and a sputtered particle emitting mechanism configured to emit sputtered particles to the plurality of substrates held by the substrate holder. Sputtering film formation is performed by emitting the sputtered particles from the sputtered particle emitting mechanism while rotating and revolving the plurality of substrates held by the substrate holder using the rotating and revolving mechanism.

A FeNi ordered alloy structural body includes a support having a surface, and particles disposed on the surface of the support with gaps therebetween. Each of the particles contains an L1.sub.0-type FeNi ordered alloy phase. In a method for manufacturing the FeNi ordered alloy structural body, the support is prepared, and particles of an FeNi disordered alloy are dispersed on the surface of the support with gaps therebetween. A nitriding treatment is performed to the particles of the FeNi disordered alloy to form particles in which nitrogen is incorporated. After the nitriding treatment, a denitrification treatment is performed to desorb the nitrogen from the particles, thereby to form the particles containing the L1.sub.0-type FeNi ordered alloy phase.

The disclosure describes techniques for forming nanoparticles including Fe.sub.16N.sub.2 phase. In some examples, the nanoparticles may be formed by first forming nanoparticles including iron, nitrogen, and at least one of carbon or boron. The carbon or boron may be incorporated into the nanoparticles such that the iron, nitrogen, and at least one of carbon or boron are mixed. Alternatively, the at least one of carbon or boron may be coated on a surface of a nanoparticle including iron and nitrogen. The nanoparticle including iron, nitrogen, and at least one of carbon or boron then may be annealed to form at least one phase domain including at least one of Fe.sub.16N.sub.2, Fe.sub.16(NB).sub.2, Fe.sub.16(NC).sub.2, or Fe.sub.16(NCB).sub.2.