Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.

There is provided a continuous thin film comprising a metal chalcogenide, wherein the metal is selected from the periodic groups 13 or 14 and the chalcogen is: sulphur (S), selenide (Se), or tellurium (Te), and wherein the thin film has a thickness of less than 20 nm. There is also provided a method of forming the continuous thin film. In a particular embodiment, molecular beam epitaxy (MBE) is used to grow indium selenide (In.sub.2Se.sub.3) thin film from two precursors (In.sub.2Se.sub.3 and Se) and said thin film is used to fabricate a ferroelectric resistive memory device.

The present disclosure relates to a hydrogen evolution apparatus including an AC power source, a semiconductor electrode and a counter electrode connected to the AC power source, an electrolyte in which the semiconductor electrode is immersed, and a light source which irradiates light on the semiconductor electrode, in which the semiconductor electrode includes a conductive substrate and n-type semiconductor particles dispersed on a p-type semiconductor matrix or p-type semiconductor particles dispersed on an n-type semiconductor matrix which is vertically grown from the conductive substrate.

A method of manufacturing a passivation film, which includes a passivation process in which a substrate on the surface of which at least one of germanium and molybdenum is contained is treated with a passivation gas containing an oxygen-containing compound, which is a compound containing an oxygen atom in the molecule, and hydrogen sulfide to form a passivation film containing a sulfur atom on the surface of the substrate. The concentration of the oxygen-containing compound in the passivation gas is from 0.001 mole ppm to less than 75 mole ppm.

A heterostructured catalyst includes a 2-dimensional (2D) array of titanium including nanocavities that are all directly attached to a substrate. Each of the titanium including nanocavities have a pore with a nanopore size and a wall with a nanowall thickness. The titanium including nanocavities can be titania nanocavities with a metal layer or a metal compound layer on the titania nanocavities including inside the pores, or the titanium including nanocavities can include SrTiO.sub.3 or consist of SrTiO.sub.3, each with a surface layer of reduced SrTiO.sub.3.

A method for manufacturing a two-dimensional material is described. In this method, an energy beam sputtering process is performed by using a target to form a transition metal film on a substrate. When the energy beam sputtering process is performed, a potential difference between the target and the substrate is 0, such that no electric field is generated between the target and the substrate. A synthesis reaction is performed on the transition metal film within a tube furnace to synthesize a two-dimensional material layer from the transition metal film and chalcogen.

A heterostructured catalyst includes a 2-dimensional (2D) array of titanium including nanocavities that are all directly attached to a substrate. Each of the titanium including nanocavities have a pore with a nanopore size and a wall with a nanowall thickness. The titanium including nanocavities can be titania nanocavities with a metal layer or a metal compound layer on the titania nanocavities including inside the pores, or the titanium including nanocavities can include SrTiO.sub.3 or consist of SrTiO.sub.3, each with a surface layer of reduced SrTiO.sub.3.

The present disclosure relates to a hydrogen evolution apparatus including an AC power source, a semiconductor electrode and a counter electrode connected to the AC power source, an electrolyte in which the semiconductor electrode is immersed, and a light source which irradiates light on the semiconductor electrode, in which the semiconductor electrode includes a conductive substrate and n-type semiconductor particles dispersed on a p-type semiconductor matrix or p-type semiconductor particles dispersed on an n-type semiconductor matrix which is vertically grown from the conductive substrate.

A permanently curved component consists of a coated substrate. The substrate is deformable, and the coating consists of multiple layers which are deposited one over another and each of which has layer elements lying adjacent to one another on a plane. The layer elements from adjacent layers are weakly connected together such that the layer elements can move relative to each other upon deforming the coated substrate. In order to produce such a component, the layer elements which lie one over another and which can consist of graphene are first deposited, and then the coated component is deformed such that a closed layer remains.

Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.