Provided is a susceptor, capable of preventing occurrence of deep scratches on the back surface and beveled part of a wafer attributable to contact with lift pins or the susceptor, and reducing dust generation from the susceptor. A susceptor according to one embodiment of this disclosure includes a susceptor main body, and arc-shaped members. The bottom surface of a counterbore part is constituted of the entire front surfaces of the arc-shaped susceptor members, and a part of the front surface of the susceptor main body. When a wafer is conveyed, the entire front surfaces of the arc-shaped members ascended by lift pins support only the outer circumferential part of the back surface of the wafer by surface contact.

A method of forming a thin film includes forming an interface layer stack on a semiconductor substrate. Forming the interface layer stack may include performing a first surface treatment on the semiconductor substrate under a reducing atmosphere. Forming the interface layer stack may include performing a second surface treatment on the semiconductor substrate. The first surface treatment may be performed under a reducing atmosphere and the second surface treatment may be performed under a nitridation atmosphere. The first surface treatment may include forming a lower interface layer on a surface of the semiconductor substrate and the second surface treatment may include forming an upper interface layer. The first surface treatment may include selectively removing at least one oxide material from a native oxide film on the semiconductor substrate.

The present invention relates to a method for producing graphene on a face-centered cubic metal catalyst having a plane oriented in one direction, and more particularly to a method of producing graphene on a metal catalyst having the (100) or (111) crystal structure and a method of producing graphene using a catalyst metal foil having a single orientation, obtained by electroplating a metal catalyst by a pulse wave current and annealing the metal catalyst. The invention also relates to a method of producing graphene using a metal catalyst, and more particularly to a method of producing graphene, comprising the steps of: alloying a metal catalyst with an alloying element; forming step structures on the metal catalyst substrate in an atmosphere of a gas having a molecular weight of carbon; and supplying hydrocarbon and hydrogen gases to the substrate. On unidirectionally oriented metal catalyst prepared according to the present invention, graphene can be grown uniformly and epitaxially. Moreover, a method for producing graphene according to the present invention can form monolayer graphene by epitaxially growing graphene while increasing the growth rate of graphene.

A particle coating apparatus configured to form a coating film on a surface of a particle of a treatment target powder using an atomic layer deposition method includes a processing chamber, a powder supply unit which includes an anterior chamber configured to house the treatment target powder, and which is configured to supply the treatment target powder into the processing chamber in a state of being isolated from outside air, a supply switching unit which is disposed between the anterior chamber and the processing chamber, and which is configured to switch supply of the treatment target powder, a material gas supply unit configured to supply a material gas into the processing chamber, an oxidizing agent supply unit configured to supply an oxidizing agent into the processing chamber, a processing chamber exhaust unit configured to exhaust the processing chamber, and a powder layer holding unit which is disposed in the processing chamber, and which is configured to hold a powder layer formed of the treatment target powder supplied from the anterior chamber and laid in a layer.

A particle coating apparatus configured to form a coating film on a surface of a particle of a treatment target powder using an atomic layer deposition method, includes a processing chamber including a chamber, and an opening/closing unit configured to open and close the chamber, a material gas supply unit configured to supply a material gas into the processing chamber, an oxidizing agent supply unit configured to supply an oxidizing agent into the processing chamber, a processing chamber exhaust unit configured to exhaust the processing chamber, a plurality of trays which is configured to be carried into the processing chamber through the opening/closing unit, and which is configured to hold a powder layer formed of the treatment target powder laid in a layer, and a placement part which is disposed in the processing chamber, and on which the plurality of trays is detachably placed.

A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.

A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.

Provided is a production apparatus (100) for continuously producing aligned carbon nanotube aggregates on a substrate supporting a catalyst while continuously transferring the substrate. The production apparatus (100) includes gas mixing prevention means (12, 13) for preventing gas present outside a growth furnace (3a) from flowing into the growth furnace (3a). The gas mixing prevention means (12, 13) includes a seal gas ejection section (12b, 13b) so that the seal gas does not flow into the growth furnace through the openings of the growth furnace. The production apparatus prevents the outside air from flowing into the production apparatus, uniformly controls, within a range suitable to production of CNTs, a concentration distribution(s) and a flow rate distribution(s) of a raw material gas and/or a catalyst activation material on the substrate, and does not disturb gas flow as much as possible in the growth furnace.

Methods and apparatuses for depositing silicon nitride in various applications are provided. Embodiments include depositing silicon nitride directly on silicon or silicon oxide surfaces using modulated dose to conversion time ratios in thermal atomic layer deposition. Embodiments include exposing a silicon oxide surface to a nitrogen-containing plasma treatment prior to depositing any silicon nitride and depositing silicon nitride by thermal atomic layer deposition.

The present invention relates to a transfer-free method for forming a graphene layer, in which a high-quality graphene layer having excellent crystallinity can be easily formed over a large area at low temperature by a transfer-free process so that it can be applied directly to a base substrate, which is used in a transparent electrode, a semiconductor device or the like, without requiring a separate transfer process, and to an electrical device comprising a graphene layer formed by the method. More specifically, the transfer-free method for forming a graphene layer comprises the steps of: depositing a Ti layer having a thickness of 3-20 m on a base substrate by sputtering; and growing graphene on the deposited Ti layer by chemical vapor deposition.